公开(公告)号：US11764077B2

公开(公告)日：2023-09-19

申请号：US17524713

申请日：2021-11-11

Applicant: Innolux Corporation

Inventor： Chuan-Ming Yeh ,  Heng-Shen Yeh ,  Kuo-Jung Fan ,  Cheng-Chi Wang

IPC: H05K3/00 ,  H05K3/46 ,  H01L21/48 ,  H01L23/498 ,  H05K1/02 ,  H01L23/00

CPC classification number: H01L21/4857 ,  H01L23/49822 ,  H01L23/562 ,  H05K1/0271 ,  H05K3/007 ,  H05K3/4647 ,  H05K2201/068

Abstract: The embodiment of the disclosure provides a composite layer circuit element and a manufacturing method thereof. The manufacturing method of the composite layer circuit element includes the following. A carrier is provided. A first dielectric layer is formed on the carrier, and the first dielectric layer is patterned. The carrier on which the first dielectric layer is formed is disposed on a first curved-surface mold, and the first dielectric layer is cured. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer is patterned. The carrier on which the first dielectric layer and the second dielectric layer are formed is disposed on a second curved-surface mold, and the second dielectric layer is cured. A thickness of a projection of the first curved-surface mold is smaller than a thickness of a projection of the second curved-surface mold.

公开(公告)号：US20240421060A1

公开(公告)日：2024-12-19

申请号：US18815875

申请日：2024-08-27

Applicant: Innolux Corporation

Inventor： Kuo-Jung Fan ,  Cheng-Chi Wang ,  Heng-Shen Yeh ,  Chuan-Ming Yeh

IPC: H01L23/498 ,  H01L21/48

Abstract: An electronic device includes a first metal layer, a first insulating layer, a second metal layer, a second insulating layer, a third metal layer, a third insulating layer, a fourth metal layer, a fourth insulating layer and a conductive structure. The first insulating layer is disposed on the first metal layer. The second metal layer is disposed on the first insulating layer. The second insulating layer is disposed on the second metal layer. The third metal layer is disposed on the second insulating layer. The third insulating layer is disposed on the third metal layer. The fourth metal layer is disposed on the third insulating layer. The fourth insulating layer is disposed on the fourth metal layer. The conductive structure is disposed on and electrically connected to the fourth insulating layer. A chemical resistance of the first insulating layer is greater than a chemical resistance of the fourth insulating layer.

公开(公告)号：US10906288B2

公开(公告)日：2021-02-02

申请号：US16377259

申请日：2019-04-08

Applicant: InnoLux Corporation

Inventor： Wen-Chien Lin ,  Kuo-Jung Fan

IPC: H01L21/00 ,  B32B43/00 ,  H01L27/12

Abstract: A method for manufacturing a display device is disclosed, the method at least includes the following step: Firstly, a temporary substrate is provided, a hydrogen containing structure is formed on the temporary substrate, a polymer film is formed on the hydrogen containing structure, and a display element is formed on the polymer film. Afterwards, a laser beam process is performed, to focus a laser beam on the hydrogen containing structure, and the temporary substrate is then removed.

公开(公告)号：US12148685B2

公开(公告)日：2024-11-19

申请号：US17530373

申请日：2021-11-18

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/683

Abstract: A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer and a first dielectric layer disposed on the first metal layer. A range of a difference between a coefficient of thermal expansion of the first dielectric layer and a coefficient of thermal expansion of the first metal layer is 0% to 70% of the coefficient of thermal expansion of the first dielectric layer.

公开(公告)号：US20230377904A1

公开(公告)日：2023-11-23

申请号：US18366576

申请日：2023-08-07

Applicant: Innolux Corporation

Inventor： Chuan-Ming Yeh ,  Heng-Shen Yeh ,  Kuo-Jung Fan ,  Cheng-Chi Wang

IPC: H01L21/48 ,  H01L23/498 ,  H05K1/02 ,  H01L23/00 ,  H05K3/00 ,  H05K3/46

CPC classification number: H01L21/4857 ,  H01L23/49822 ,  H05K1/0271 ,  H01L23/562 ,  H05K3/007 ,  H05K3/4647 ,  H05K2201/068

Abstract: The embodiment of the disclosure provides a composite layer circuit element of an electronic device. The composite layer circuit element includes a first dielectric layer, a first circuit layer and a second dielectric layer. The first circuit layer is disposed on the first dielectric layer, and the second dielectric layer is disposed on the first circuit layer. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer in a cross section view.

公开(公告)号：US20220189863A1

公开(公告)日：2022-06-16

申请号：US17531777

申请日：2021-11-21

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48

Abstract: A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer, a first dielectric layer disposed on the first metal layer, a second metal layer disposed on the first dielectric layer, and a second dielectric layer disposed on the second metal layer. A coefficient of thermal expansion of the first dielectric layer is less than a coefficient of thermal expansion of the second dielectric layer.

公开(公告)号：US20250038089A1

公开(公告)日：2025-01-30

申请号：US18914225

申请日：2024-10-13

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/683

Abstract: An electronic device includes a first metal layer, a first insulating layer disposed on the first metal layer, a second metal layer, a second insulating layer, a third metal layer, a third insulating layer, a fourth metal layer, a fourth insulating layer and an electronic component. The second metal layer is disposed on the first insulating layer. The second insulating layer is disposed on the second metal layer. The third metal layer is disposed on the second insulating layer. The third insulating layer is disposed on the third metal layer. The fourth metal layer is disposed on the third insulating layer. The fourth insulating layer is disposed on the fourth metal layer. The electronic component is disposed on the fourth insulating layer and electrically connected to the fourth metal layer. A Young's modulus of the third insulating layer is less than a Young's modulus of the first insulating layer.

公开(公告)号：US12197056B2

公开(公告)日：2025-01-14

申请号：US18415998

申请日：2024-01-18

Applicant: InnoLux Corporation

Inventor： Sheng-Hui Chiu ,  Kuo-Jung Fan

IPC: G02F1/13 ,  G02F1/1333 ,  G02F1/1335

Abstract: An electronic device includes a display panel and a viewing angle switchable panel disposed on the display panel. The display panel includes: a first substrate; a second substrate disposed opposite to the first substrate; and a display medium layer disposed between the first substrate and the second substrate. The viewing angle switchable panel is provided with: a third substrate; a fourth substrate disposed opposite to the third substrate; and a switching medium layer disposed between the third substrate and the fourth substrate. At least one of the third substrate and the fourth substrate has a thickness of 5 μm to 50 μm.

公开(公告)号：US12107036B2

公开(公告)日：2024-10-01

申请号：US17533068

申请日：2021-11-22

Applicant: Innolux Corporation

Inventor： Kuo-Jung Fan ,  Cheng-Chi Wang ,  Heng-Shen Yeh ,  Chuan-Ming Yeh

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/49838 ,  H01L23/49866

Abstract: A redistribution layer structure and the manufacturing method thereof are provided. The redistribution layer structure includes a first metal layer, a first dielectric layer, a second metal layer, and a second dielectric layer. The first dielectric layer is disposed on the first metal layer. The second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the second metal layer. A chemical resistance of the first dielectric layer is greater than a chemical resistance of the second dielectric layer.

公开(公告)号：US20230026151A1

公开(公告)日：2023-01-26

申请号：US17524713

申请日：2021-11-11

Applicant: Innolux Corporation

Inventor： Chuan-Ming Yeh ,  Heng-Shen Yeh ,  Kuo-Jung Fan ,  Cheng-Chi Wang

IPC: H01L21/48 ,  H01L23/498 ,  H01L23/00 ,  H05K1/02

Abstract: The embodiment of the disclosure provides a composite layer circuit element and a manufacturing method thereof. The manufacturing method of the composite layer circuit element includes the following. A carrier is provided. A first dielectric layer is formed on the carrier, and the first dielectric layer is patterned. The carrier on which the first dielectric layer is formed is disposed on a first curved-surface mold, and the first dielectric layer is cured. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer is patterned. The carrier on which the first dielectric layer and the second dielectric layer are formed is disposed on a second curved-surface mold, and the second dielectric layer is cured. A thickness of a projection of the first curved-surface mold is smaller than a thickness of a projection of the second curved-surface mold.