公开(公告)号：US11764077B2

公开(公告)日：2023-09-19

申请号：US17524713

申请日：2021-11-11

Applicant: Innolux Corporation

Inventor： Chuan-Ming Yeh ,  Heng-Shen Yeh ,  Kuo-Jung Fan ,  Cheng-Chi Wang

IPC: H05K3/00 ,  H05K3/46 ,  H01L21/48 ,  H01L23/498 ,  H05K1/02 ,  H01L23/00

CPC classification number: H01L21/4857 ,  H01L23/49822 ,  H01L23/562 ,  H05K1/0271 ,  H05K3/007 ,  H05K3/4647 ,  H05K2201/068

Abstract: The embodiment of the disclosure provides a composite layer circuit element and a manufacturing method thereof. The manufacturing method of the composite layer circuit element includes the following. A carrier is provided. A first dielectric layer is formed on the carrier, and the first dielectric layer is patterned. The carrier on which the first dielectric layer is formed is disposed on a first curved-surface mold, and the first dielectric layer is cured. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer is patterned. The carrier on which the first dielectric layer and the second dielectric layer are formed is disposed on a second curved-surface mold, and the second dielectric layer is cured. A thickness of a projection of the first curved-surface mold is smaller than a thickness of a projection of the second curved-surface mold.

公开(公告)号：US20240421060A1

公开(公告)日：2024-12-19

申请号：US18815875

申请日：2024-08-27

Applicant: Innolux Corporation

Inventor： Kuo-Jung Fan ,  Cheng-Chi Wang ,  Heng-Shen Yeh ,  Chuan-Ming Yeh

IPC: H01L23/498 ,  H01L21/48

Abstract: An electronic device includes a first metal layer, a first insulating layer, a second metal layer, a second insulating layer, a third metal layer, a third insulating layer, a fourth metal layer, a fourth insulating layer and a conductive structure. The first insulating layer is disposed on the first metal layer. The second metal layer is disposed on the first insulating layer. The second insulating layer is disposed on the second metal layer. The third metal layer is disposed on the second insulating layer. The third insulating layer is disposed on the third metal layer. The fourth metal layer is disposed on the third insulating layer. The fourth insulating layer is disposed on the fourth metal layer. The conductive structure is disposed on and electrically connected to the fourth insulating layer. A chemical resistance of the first insulating layer is greater than a chemical resistance of the fourth insulating layer.

公开(公告)号：US20240128184A1

公开(公告)日：2024-04-18

申请号：US18076374

申请日：2022-12-06

Applicant: Innolux Corporation

Inventor： Ker-Yih Kao ,  Chin-Ming Huang ,  Heng-Shen Yeh

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00

CPC classification number: H01L23/49838 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49822 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/92125

Abstract: The disclosure provides an electronic device and a manufacturing method thereof. The electronic device includes a redistribution layer, an electronic unit, and a conductive bump. The redistribution layer includes a first seed layer, a first conductive layer, and a first insulating layer. The first conductive layer is disposed on the first seed layer, the first insulating layer is disposed on the first conductive layer, and an opening of the first insulating layer exposes at least a portion of the first conductive layer. The electronic unit is electrically connected to the redistribution layer. The conductive bump is disposed between the first conductive layer and the electronic unit and is correspondingly disposed in the opening. The electronic unit is electrically connected to the redistribution layer via the conductive bump. The conductive bump is directly in contact with the first conductive layer.

公开(公告)号：US20230238278A1

公开(公告)日：2023-07-27

申请号：US17747940

申请日：2022-05-18

Applicant: Innolux Corporation

Inventor： Ching-Wei Chen ,  Yu-Jen Chang ,  Tzu-Yen Chiu ,  Hung-I Tseng ,  Chuan-Ming Yeh ,  Heng-Shen Yeh

IPC: H01L21/768

CPC classification number: H01L21/76826 ,  H01L21/76816 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/5226

Abstract: A manufacturing method of a package structure of an electronic device, including the following steps, is provided. A first seed layer is formed on a carrier plate. A first metal layer is formed on the first seed layer. A first insulating layer is formed on the first metal layer, wherein the first insulating layer exposes a portion of the first metal layer. A first plasma treatment is performed on the first insulating layer and the exposed portion of the first metal layer. After performing the first plasma treatment, the carrier plate formed with the first seed layer, the first metal layer, and the first insulating layer is placed in a microenvironment controlling box. After taking the carrier plate out of the microenvironment controlling box, a second seed layer is formed on the first insulating layer and the exposed portion of the first metal layer.

公开(公告)号：US12148685B2

公开(公告)日：2024-11-19

申请号：US17530373

申请日：2021-11-18

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/683

Abstract: A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer and a first dielectric layer disposed on the first metal layer. A range of a difference between a coefficient of thermal expansion of the first dielectric layer and a coefficient of thermal expansion of the first metal layer is 0% to 70% of the coefficient of thermal expansion of the first dielectric layer.

公开(公告)号：US20230377904A1

公开(公告)日：2023-11-23

申请号：US18366576

申请日：2023-08-07

Applicant: Innolux Corporation

Inventor： Chuan-Ming Yeh ,  Heng-Shen Yeh ,  Kuo-Jung Fan ,  Cheng-Chi Wang

IPC: H01L21/48 ,  H01L23/498 ,  H05K1/02 ,  H01L23/00 ,  H05K3/00 ,  H05K3/46

CPC classification number: H01L21/4857 ,  H01L23/49822 ,  H05K1/0271 ,  H01L23/562 ,  H05K3/007 ,  H05K3/4647 ,  H05K2201/068

Abstract: The embodiment of the disclosure provides a composite layer circuit element of an electronic device. The composite layer circuit element includes a first dielectric layer, a first circuit layer and a second dielectric layer. The first circuit layer is disposed on the first dielectric layer, and the second dielectric layer is disposed on the first circuit layer. A thickness of the first dielectric layer is greater than a thickness of the second dielectric layer in a cross section view.

公开(公告)号：US20220189863A1

公开(公告)日：2022-06-16

申请号：US17531777

申请日：2021-11-21

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48

Abstract: A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer, a first dielectric layer disposed on the first metal layer, a second metal layer disposed on the first dielectric layer, and a second dielectric layer disposed on the second metal layer. A coefficient of thermal expansion of the first dielectric layer is less than a coefficient of thermal expansion of the second dielectric layer.

公开(公告)号：US20250038089A1

公开(公告)日：2025-01-30

申请号：US18914225

申请日：2024-10-13

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/683

Abstract: An electronic device includes a first metal layer, a first insulating layer disposed on the first metal layer, a second metal layer, a second insulating layer, a third metal layer, a third insulating layer, a fourth metal layer, a fourth insulating layer and an electronic component. The second metal layer is disposed on the first insulating layer. The second insulating layer is disposed on the second metal layer. The third metal layer is disposed on the second insulating layer. The third insulating layer is disposed on the third metal layer. The fourth metal layer is disposed on the third insulating layer. The fourth insulating layer is disposed on the fourth metal layer. The electronic component is disposed on the fourth insulating layer and electrically connected to the fourth metal layer. A Young's modulus of the third insulating layer is less than a Young's modulus of the first insulating layer.

公开(公告)号：US12191197B2

公开(公告)日：2025-01-07

申请号：US17747940

申请日：2022-05-18

Applicant: Innolux Corporation

Inventor： Ching-Wei Chen ,  Yu-Jen Chang ,  Tzu-Yen Chiu ,  Hung-I Tseng ,  Chuan-Ming Yeh ,  Heng-Shen Yeh

IPC: H01L21/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A manufacturing method of a package structure of an electronic device, including the following steps, is provided. A first seed layer is formed on a carrier plate. A first metal layer is formed on the first seed layer. A first insulating layer is formed on the first metal layer, wherein the first insulating layer exposes a portion of the first metal layer. A first plasma treatment is performed on the first insulating layer and the exposed portion of the first metal layer. After performing the first plasma treatment, the carrier plate formed with the first seed layer, the first metal layer, and the first insulating layer is placed in a microenvironment controlling box. After taking the carrier plate out of the microenvironment controlling box, a second seed layer is formed on the first insulating layer and the exposed portion of the first metal layer.

公开(公告)号：US12107036B2

公开(公告)日：2024-10-01

申请号：US17533068

申请日：2021-11-22

Applicant: Innolux Corporation

Inventor： Kuo-Jung Fan ,  Cheng-Chi Wang ,  Heng-Shen Yeh ,  Chuan-Ming Yeh

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/49838 ,  H01L23/49866

Abstract: A redistribution layer structure and the manufacturing method thereof are provided. The redistribution layer structure includes a first metal layer, a first dielectric layer, a second metal layer, and a second dielectric layer. The first dielectric layer is disposed on the first metal layer. The second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the second metal layer. A chemical resistance of the first dielectric layer is greater than a chemical resistance of the second dielectric layer.