公开(公告)号：US20250038089A1

公开(公告)日：2025-01-30

申请号：US18914225

申请日：2024-10-13

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/683

Abstract: An electronic device includes a first metal layer, a first insulating layer disposed on the first metal layer, a second metal layer, a second insulating layer, a third metal layer, a third insulating layer, a fourth metal layer, a fourth insulating layer and an electronic component. The second metal layer is disposed on the first insulating layer. The second insulating layer is disposed on the second metal layer. The third metal layer is disposed on the second insulating layer. The third insulating layer is disposed on the third metal layer. The fourth metal layer is disposed on the third insulating layer. The fourth insulating layer is disposed on the fourth metal layer. The electronic component is disposed on the fourth insulating layer and electrically connected to the fourth metal layer. A Young's modulus of the third insulating layer is less than a Young's modulus of the first insulating layer.

公开(公告)号：US20220189862A1

公开(公告)日：2022-06-16

申请号：US17530373

申请日：2021-11-18

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48

Abstract: A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer and a first dielectric layer disposed on the first metal layer. A range of a difference between a coefficient of thermal expansion of the first dielectric layer and a coefficient of thermal expansion of the first metal layer is 0% to 70% of the coefficient of thermal expansion of the first dielectric layer.

公开(公告)号：US20220181189A1

公开(公告)日：2022-06-09

申请号：US17520599

申请日：2021-11-05

Applicant: Innolux Corporation

Inventor： Cheng-Chi Wang ,  Wen-Hsiang Liao ,  Yeong-E Chen ,  Hung-Sheng Chou ,  Cheng-En Cheng

IPC: H01L21/683 ,  H01L21/48

Abstract: A manufacturing method of a semiconductor package is provided. The manufacturing method includes the following. A plurality of semiconductor components are provided. Each semiconductor component has at least one conductive bump. A substrate is provided. The substrate has a plurality of conductive pads. A transfer device is provided. The transfer device transfers the semiconductor components onto the substrate. A heating device is provided. The heating device heats or pressurizes at least two semiconductor components. During transferring of the semiconductor components to the substrate, the at least one conductive bump of each semiconductor component is docked to a corresponding one of the conductive pads.

公开(公告)号：US12148685B2

公开(公告)日：2024-11-19

申请号：US17530373

申请日：2021-11-18

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/683

Abstract: A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer and a first dielectric layer disposed on the first metal layer. A range of a difference between a coefficient of thermal expansion of the first dielectric layer and a coefficient of thermal expansion of the first metal layer is 0% to 70% of the coefficient of thermal expansion of the first dielectric layer.

公开(公告)号：US20220189863A1

公开(公告)日：2022-06-16

申请号：US17531777

申请日：2021-11-21

Applicant: Innolux Corporation

Inventor： Hung-Sheng Chou ,  Wen-Hsiang Liao ,  Kuo-Jung Fan ,  Heng-Shen Yeh ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48

Abstract: A redistribution layer structure is provided. The redistribution layer structure includes a first metal layer, a first dielectric layer disposed on the first metal layer, a second metal layer disposed on the first dielectric layer, and a second dielectric layer disposed on the second metal layer. A coefficient of thermal expansion of the first dielectric layer is less than a coefficient of thermal expansion of the second dielectric layer.

公开(公告)号：US11769685B2

公开(公告)日：2023-09-26

申请号：US17520599

申请日：2021-11-05

Applicant: Innolux Corporation

Inventor： Cheng-Chi Wang ,  Wen-Hsiang Liao ,  Yeong-E Chen ,  Hung-Sheng Chou ,  Cheng-En Cheng

IPC: H01L21/683 ,  H01L21/48

CPC classification number: H01L21/6836 ,  H01L21/4853 ,  H01L2221/68354 ,  H01L2221/68363

Abstract: A manufacturing method of a semiconductor package is provided. The manufacturing method includes the following. A plurality of semiconductor components are provided. Each semiconductor component has at least one conductive bump. A substrate is provided. The substrate has a plurality of conductive pads. A transfer device is provided. The transfer device transfers the semiconductor components onto the substrate. A heating device is provided. The heating device heats or pressurizes at least two semiconductor components. During transferring of the semiconductor components to the substrate, the at least one conductive bump of each semiconductor component is docked to a corresponding one of the conductive pads.