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    Liquid crystal device
    1.
    发明授权
    Liquid crystal device 有权

    公开(公告)号：US11333913B2

    公开(公告)日：2022-05-17

    申请号：US16882774

    申请日：2020-05-26

    Applicant: InnoLux Corporation

    Inventor： Yu-Chih Tseng ,  Kuo-Shun Tsai ,  Chuan-Ming Yeh ,  Chu-Hong Lai ,  Ker-Yih Kao

    IPC: G02F1/1333 ,  G02F1/1368

    Abstract: A liquid crystal device comprises a first polymer substrate, a first buffer layer, thin film transistors, a liquid crystal layer and a second polymer substrate. The first buffer layer is disposed on the first polymer substrate. The thin film transistors are disposed on the first buffer layer. The liquid crystal layer is disposed on the thin film transistors. The second polymer substrate is disposed on the liquid crystal layer.

    ELECTRONIC DEVICE
    2.
    发明申请
    ELECTRONIC DEVICE 有权

    公开(公告)号：US20240421060A1

    公开(公告)日：2024-12-19

    申请号：US18815875

    申请日：2024-08-27

    Applicant: Innolux Corporation

    Inventor： Kuo-Jung Fan ,  Cheng-Chi Wang ,  Heng-Shen Yeh ,  Chuan-Ming Yeh

    IPC: H01L23/498 ,  H01L21/48

    Abstract: An electronic device includes a first metal layer, a first insulating layer, a second metal layer, a second insulating layer, a third metal layer, a third insulating layer, a fourth metal layer, a fourth insulating layer and a conductive structure. The first insulating layer is disposed on the first metal layer. The second metal layer is disposed on the first insulating layer. The second insulating layer is disposed on the second metal layer. The third metal layer is disposed on the second insulating layer. The third insulating layer is disposed on the third metal layer. The fourth metal layer is disposed on the third insulating layer. The fourth insulating layer is disposed on the fourth metal layer. The conductive structure is disposed on and electrically connected to the fourth insulating layer. A chemical resistance of the first insulating layer is greater than a chemical resistance of the fourth insulating layer.

    MANUFACTURING METHOD OF PACKAGE STRUCTURE OF ELECTRONIC DEVICE
    3.
    发明公开
    MANUFACTURING METHOD OF PACKAGE STRUCTURE OF ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20230238278A1

    公开(公告)日：2023-07-27

    申请号：US17747940

    申请日：2022-05-18

    Applicant: Innolux Corporation

    Inventor： Ching-Wei Chen ,  Yu-Jen Chang ,  Tzu-Yen Chiu ,  Hung-I Tseng ,  Chuan-Ming Yeh ,  Heng-Shen Yeh

    IPC: H01L21/768

    CPC classification number: H01L21/76826 ,  H01L21/76816 ,  H01L21/76873 ,  H01L21/76883 ,  H01L23/5226

    Abstract: A manufacturing method of a package structure of an electronic device, including the following steps, is provided. A first seed layer is formed on a carrier plate. A first metal layer is formed on the first seed layer. A first insulating layer is formed on the first metal layer, wherein the first insulating layer exposes a portion of the first metal layer. A first plasma treatment is performed on the first insulating layer and the exposed portion of the first metal layer. After performing the first plasma treatment, the carrier plate formed with the first seed layer, the first metal layer, and the first insulating layer is placed in a microenvironment controlling box. After taking the carrier plate out of the microenvironment controlling box, a second seed layer is formed on the first insulating layer and the exposed portion of the first metal layer.

    Manufacturing method of package structure of electronic device
    6.
    发明授权
    Manufacturing method of package structure of electronic device 有权

    公开(公告)号：US12191197B2

    公开(公告)日：2025-01-07

    申请号：US17747940

    申请日：2022-05-18

    Applicant: Innolux Corporation

    Inventor： Ching-Wei Chen ,  Yu-Jen Chang ,  Tzu-Yen Chiu ,  Hung-I Tseng ,  Chuan-Ming Yeh ,  Heng-Shen Yeh

    IPC: H01L21/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

    Abstract: A manufacturing method of a package structure of an electronic device, including the following steps, is provided. A first seed layer is formed on a carrier plate. A first metal layer is formed on the first seed layer. A first insulating layer is formed on the first metal layer, wherein the first insulating layer exposes a portion of the first metal layer. A first plasma treatment is performed on the first insulating layer and the exposed portion of the first metal layer. After performing the first plasma treatment, the carrier plate formed with the first seed layer, the first metal layer, and the first insulating layer is placed in a microenvironment controlling box. After taking the carrier plate out of the microenvironment controlling box, a second seed layer is formed on the first insulating layer and the exposed portion of the first metal layer.

    COMPOSITE LAYER CIRCUIT ELEMENT AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    COMPOSITE LAYER CIRCUIT ELEMENT AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20230026151A1

    公开(公告)日：2023-01-26

    申请号：US17524713

    申请日：2021-11-11

    Applicant: Innolux Corporation

    Inventor： Chuan-Ming Yeh ,  Heng-Shen Yeh ,  Kuo-Jung Fan ,  Cheng-Chi Wang

    IPC: H01L21/48 ,  H01L23/498 ,  H01L23/00 ,  H05K1/02

    Abstract: The embodiment of the disclosure provides a composite layer circuit element and a manufacturing method thereof. The manufacturing method of the composite layer circuit element includes the following. A carrier is provided. A first dielectric layer is formed on the carrier, and the first dielectric layer is patterned. The carrier on which the first dielectric layer is formed is disposed on a first curved-surface mold, and the first dielectric layer is cured. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer is patterned. The carrier on which the first dielectric layer and the second dielectric layer are formed is disposed on a second curved-surface mold, and the second dielectric layer is cured. A thickness of a projection of the first curved-surface mold is smaller than a thickness of a projection of the second curved-surface mold.

    REDISTRIBUTION LAYER STRUCTURE AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    REDISTRIBUTION LAYER STRUCTURE AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20220181242A1

    公开(公告)日：2022-06-09

    申请号：US17533068

    申请日：2021-11-22

    Applicant: Innolux Corporation

    Inventor： Kuo-Jung Fan ,  Cheng-Chi Wang ,  Heng-Shen Yeh ,  Chuan-Ming Yeh

    IPC: H01L23/498 ,  H01L21/48

    Abstract: A redistribution layer structure and the manufacturing method thereof are provided. The redistribution layer structure includes a first metal layer, a first dielectric layer, a second metal layer, and a second dielectric layer. The first dielectric layer is disposed on the first metal layer. The second metal layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the second metal layer. A chemical resistance of the first dielectric layer is greater than a chemical resistance of the second dielectric layer.

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