公开(公告)号：US20230163120A1

公开(公告)日：2023-05-25

申请号：US17530618

申请日：2021-11-19

Applicant: Intel Corporation

Inventor： Richard Geiger ,  Georgios Panagopoulos ,  Johannes Xaver Rauh ,  Harald Gossner

IPC: H01L27/02 ,  H01L29/868 ,  H01L29/872 ,  H01L29/66

CPC classification number: H01L27/0296 ,  H01L27/0255 ,  H01L29/868 ,  H01L29/872 ,  H01L29/66143 ,  H01L29/66136

Abstract: Disclosed herein are IC devices, packages, and device assemblies that include diodes arranged so that their first and second terminals may be contacted from the opposite faces of a support structure. Such diodes are referred to herein as “vertical diodes” to reflect the fact that the diode extends, in a vertical direction (i.e., in a direction perpendicular to the support structure), between the bottom and the top of support structures. Vertical diodes as described herein may introduce additional degrees of freedom in diode choices in terms of, e.g., high-voltage handling, capacitance modulation, and speed.

公开(公告)号：US10297302B2

公开(公告)日：2019-05-21

申请号：US15371122

申请日：2016-12-06

Applicant: Intel Corporation

Inventor： Charles Augustine ,  Shigeki Tomishima ,  Wei Wu ,  Shih-Lien Lu ,  James W. Tschanz ,  Georgios Panagopoulos ,  Helia Naeimi

IPC: G11C11/16

Abstract: An apparatus is described that includes a semiconductor chip memory array having resistive storage cells. The apparatus also includes a comparator to compare a first word to be written into the array against a second word stored in the array at the location targeted by a write operation that will write the first word into the array. The apparatus also includes circuitry to iteratively write to one or more bit locations where a difference exists between the first word and the second word with increasing write current intensity with each successive iteration.