公开(公告)号：US20160126311A1

公开(公告)日：2016-05-05

申请号：US14933226

申请日：2015-11-05

Applicant: Intel Corporation

Inventor： Fatma Arzum Simsek-Ege ,  Jie Jason Sun ,  Benben Li ,  Srikant Jayanti ,  Han Zhao ,  Guangyu Huang ,  Haitao Liu

IPC: H01L29/10 ,  H01L27/115

CPC classification number: H01L29/105 ,  H01L21/02532 ,  H01L21/02595 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/04 ,  H01L29/1037 ,  H01L29/16

Abstract: A hollow-channel memory device comprises a source layer, a first hollow-channel pillar structure formed on the source layer, and a second hollow-channel pillar structure formed on the first hollow-channel pillar structure. The first hollow-channel pillar structure comprises a first thin channel and the second hollow-channel pillar structure comprises a second thin channel that is in contact with the first thin channel. In one exemplary embodiment, the first thin channel comprises a first level of doping; and the second thin channel comprises a second level of doping that is different from the first level of doping. In another exemplary embodiment, the first and second levels of doping are the same.