公开(公告)号：US20200313084A1

公开(公告)日：2020-10-01

申请号：US16367136

申请日：2019-03-27

Applicant: Intel Corporation

Inventor： Daniel Ouellette ,  Christopher Wiegand ,  Justin Brockman ,  Tofizur Rahman ,  Oleg Golonzka ,  Angeline Smith ,  Andrew Smith ,  James Pellegren ,  Michael Robinson ,  Huiying Liu

IPC: H01L43/12 ,  H01L27/22

Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode and a magnetic junction directly on the conductive layer. The magnetic junction further includes a pinning structure above the conductive layer, a fixed magnet above the pinning structure, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier layer and a second electrode above the free magnet. The conductive layer including iridium and the pinning structure including iridium provide switching efficiency.

公开(公告)号：US20200313074A1

公开(公告)日：2020-10-01

申请号：US16367122

申请日：2019-03-27

Applicant: Intel Corporation

Inventor： Angeline Smith ,  Daniel Ouellette ,  Christopher Wiegand ,  Justin Brockman ,  Tofizur Rahman ,  Oleg Golonzka ,  Andrew Smith ,  James Pellegren

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

Abstract: A memory device includes a first electrode, a second electrode and a magnetic junction between the first and the second electrode. The magnetic junction includes a first magnetic structure that includes a first magnet including an alloy of cobalt and tungsten, and a second magnet above the first magnet. The first and the second magnets are separated by a non-magnetic spacer layer. The magnetic junction further includes a layer including a metal and oxygen on the first magnetic structure. The tunnel barrier layer has an crystal texture. The magnetic junction further includes a third magnet on the tunnel barrier layer. The third magnet has a magnetization which can change in response to torque from a current tunneling through the tunnel barrier layer.