公开(公告)号：US08859431B2

公开(公告)日：2014-10-14

申请号：US13911200

申请日：2013-06-06

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

IPC: H01L21/44 ,  H01L21/28 ,  H01L21/324 ,  H01L21/285 ,  H01L21/67 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。

公开(公告)号：US20140057371A1

公开(公告)日：2014-02-27

申请号：US14071894

申请日：2013-11-05

Applicant: Intermolecular Inc.

Inventor： John Foster

IPC: H01L21/66 ,  H01L21/306

CPC classification number: H01L21/30604 ,  H01L21/02071 ,  H01L21/32134 ,  H01L21/67086 ,  H01L21/823828 ,  H01L22/12 ,  H01L22/20 ,  H01L22/30

Abstract: Combinatorial workflow is provided for evaluating cleaning processes after forming a gate structure of transistor devices, to provide optimized process conditions for gate stack formation, including metal gate stack using high-k dielectrics. NMOS and PMOS transistor devices are combinatorially fabricated on multiple regions of a substrate, with each region exposed to a different cleaning chemical and process. The transistor devices are then characterized, and the data are compared to categorize the potential damages of different cleaning chemicals and processes. Optimized chemicals and processes can be obtained to satisfy desired device requirements.

Abstract translation: 提供了组合工作流程，用于在形成晶体管器件的栅极结构之后评估清洁过程，为栅极堆叠形成提供优化的工艺条件，包括使用高k电介质的金属栅极堆叠。 NMOS和PMOS晶体管器件组合地制造在衬底的多个区域上，每个区域暴露于不同的清洁化学和工艺。 然后对晶体管器件进行表征，并对数据进行比较，对不同清洁化学品和工艺的潜在损害进行分类。 可以获得优化的化学品和工艺以满足所需的装置要求。

公开(公告)号：US20130267091A1

公开(公告)日：2013-10-10

申请号：US13911200

申请日：2013-06-06

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

IPC: H01L21/324 ,  H01L21/28

CPC classification number: H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。