THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
    12.
    发明申请
    THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 审中-公开
    薄膜晶体管和平板显示装置

    公开(公告)号:US20130277660A1

    公开(公告)日:2013-10-24

    申请号:US13922785

    申请日:2013-06-20

    IPC分类号: H01L29/786

    摘要: An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

    摘要翻译: 一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。 薄膜晶体管包括形成在基板上的栅电极,形成在基板上并覆盖栅电极的栅极绝缘层,形成在栅绝缘层上并覆盖栅电极的氧化物半导体层,形成在源极上的钛层 区域和漏区,以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。 钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻,在它们之间形成稳定的界面结,并阻止铜的扩散。

    Organic light emitting display device and method of manufacturing the same
    13.
    发明授权
    Organic light emitting display device and method of manufacturing the same 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US08436342B2

    公开(公告)日:2013-05-07

    申请号:US12654938

    申请日:2010-01-08

    IPC分类号: H01L51/52 H01L51/56 H01L33/00

    CPC分类号: H01L27/3262 H01L2251/305

    摘要: Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

    摘要翻译: 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括具有以第一氧化物半导体层和第二氧化物半导体层堆叠的结构形成的激活层的驱动单元的薄膜晶体管,具有像素单元的薄膜晶体管 由第二氧化物半导体层形成的激活层和耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在第一氧化物半导体层上的沟道,其具有比第二氧化物半导体层更高的载流子浓度,具有高电荷迁移率,并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层,具有稳定且均匀的功能特性。

    Thin film transistor and flat panel display device having the same
    14.
    发明申请
    Thin film transistor and flat panel display device having the same 审中-公开
    薄膜晶体管和具有该薄膜晶体管的平板显示装置

    公开(公告)号:US20100176394A1

    公开(公告)日:2010-07-15

    申请号:US12654939

    申请日:2010-01-08

    IPC分类号: H01L33/00 H01L29/786

    摘要: An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

    摘要翻译: 一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。 薄膜晶体管包括形成在基板上的栅电极,形成在基板上并覆盖栅电极的栅极绝缘层,形成在栅绝缘层上并覆盖栅电极的氧化物半导体层,形成在源极上的钛层 区域和漏区,以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。 钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻,在它们之间形成稳定的界面接合,并阻止铜的扩散。

    Organic light emitting display device and method of manufacturing the same
    15.
    发明申请
    Organic light emitting display device and method of manufacturing the same 有权
    有机发光显示装置及其制造方法

    公开(公告)号:US20100176383A1

    公开(公告)日:2010-07-15

    申请号:US12654938

    申请日:2010-01-08

    IPC分类号: H01L51/52 H01L51/56 H01L33/00

    CPC分类号: H01L27/3262 H01L2251/305

    摘要: Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

    摘要翻译: 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括具有以第一氧化物半导体层和第二氧化物半导体层堆叠的结构形成的激活层的驱动单元的薄膜晶体管,具有像素单元的薄膜晶体管 由第二氧化物半导体层形成的激活层和耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在第一氧化物半导体层上的沟道,其具有比第二氧化物半导体层更高的载流子浓度,具有高电荷迁移率,并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层,具有稳定且均匀的功能特性。

    Organic light emitting display device
    16.
    发明申请
    Organic light emitting display device 有权
    有机发光显示装置

    公开(公告)号:US20110042666A1

    公开(公告)日:2011-02-24

    申请号:US12801201

    申请日:2010-05-27

    IPC分类号: H01L33/28

    摘要: An organic light emitting display device including a plurality of scan lines arranged in a first direction, a plurality of data lines arranged in a second direction, the plurality of data lines intersecting with the plurality of scan lines, and pixels respectively disposed at intersection portions of the scan and data lines, each pixel including at least one thin film transistor (TFT) and an organic light emitting diode, wherein the TFT is an oxide TFT, the oxide TFT including a first oxide semiconductor layer as an active layer, and a second oxide semiconductor layer is disposed between intersecting scan and data lines.

    摘要翻译: 一种有机发光显示装置,包括沿第一方向布置的多条扫描线,沿第二方向布置的多条数据线,与多条扫描线相交的多条数据线,以及分别设置在多条扫描线的交点处的像素 所述扫描和数据线,每个像素包括至少一个薄膜晶体管(TFT)和有机发光二极管,其中所述TFT是氧化物TFT,所述氧化物TFT包括作为有源层的第一氧化物半导体层,以及第二 氧化物半导体层设置在相交的扫描线和数据线之间。

    Organic light emitting display device
    17.
    发明授权
    Organic light emitting display device 有权
    有机发光显示装置

    公开(公告)号:US08237168B2

    公开(公告)日:2012-08-07

    申请号:US12801201

    申请日:2010-05-27

    摘要: An organic light emitting display device including a plurality of scan lines arranged in a first direction, a plurality of data lines arranged in a second direction, the plurality of data lines intersecting with the plurality of scan lines, and pixels respectively disposed at intersection portions of the scan and data lines, each pixel including at least one thin film transistor (TFT) and an organic light emitting diode, wherein the TFT is an oxide TFT, the oxide TFT including a first oxide semiconductor layer as an active layer, and a second oxide semiconductor layer is disposed between intersecting scan and data lines.

    摘要翻译: 一种有机发光显示装置,包括沿第一方向布置的多条扫描线,沿第二方向布置的多条数据线,与多条扫描线相交的多条数据线,以及分别设置在多条扫描线的交点处的像素 所述扫描和数据线,每个像素包括至少一个薄膜晶体管(TFT)和有机发光二极管,其中所述TFT是氧化物TFT,所述氧化物TFT包括作为有源层的第一氧化物半导体层,以及第二 氧化物半导体层设置在相交的扫描线和数据线之间。

    Thin film transistor and method of fabricating the same
    18.
    发明授权
    Thin film transistor and method of fabricating the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号:US08466462B2

    公开(公告)日:2013-06-18

    申请号:US12369051

    申请日:2009-02-11

    IPC分类号: H01L29/10

    摘要: A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes.

    摘要翻译: 一种薄膜晶体管(TFT),其包括栅电极,有源层以及源极和漏极。 有源层包括与源极和漏极接触的接触区,其比有源层的剩余区域薄。 接触区域减小了活性材料层与源极和漏极之间的接触电阻。