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    Thin film transistor, method of manufacturing the same and flat panel display device having the same
    1.
    发明授权
    Thin film transistor, method of manufacturing the same and flat panel display device having the same 有权
    薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示装置

    公开(公告)号：US07994500B2

    公开(公告)日：2011-08-09

    申请号：US12424860

    申请日：2009-04-16

    申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

    发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

    IPC分类号： H01L29/22

    CPC分类号： H01L29/7869 ,  H01L29/78606

    摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

    摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止电荷俘获。

    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
    2.
    发明申请
    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
    薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示器件

    公开(公告)号：US20090321732A1

    公开(公告)日：2009-12-31

    申请号：US12424860

    申请日：2009-04-16

    申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

    发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

    IPC分类号： H01L29/22 ,  H01L21/44

    CPC分类号： H01L29/7869 ,  H01L29/78606

    摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

    摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

    Thin film transistor and method of fabricating the same
    3.
    发明授权
    Thin film transistor and method of fabricating the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US08466462B2

    公开(公告)日：2013-06-18

    申请号：US12369051

    申请日：2009-02-11

    申请人： Hyun-Joong Chung ,  Min-Kyu Kim ,  Jong-Han Jeong ,  Yeon-Gon Mo

    发明人： Hyun-Joong Chung ,  Min-Kyu Kim ,  Jong-Han Jeong ,  Yeon-Gon Mo

    IPC分类号： H01L29/10

    CPC分类号： H01L29/7869 ,  H01L29/41733 ,  H01L29/78618

    摘要： A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes.

    摘要翻译： 一种薄膜晶体管（TFT），其包括栅电极，有源层以及源极和漏极。 有源层包括与源极和漏极接触的接触区，其比有源层的剩余区域薄。 接触区域减小了活性材料层与源极和漏极之间的接触电阻。

    Thin film transistor, method of manufacturing the same and flat panel display device having the same
    9.
    发明授权
    Thin film transistor, method of manufacturing the same and flat panel display device having the same 有权
    薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示装置

    公开(公告)号：US08541258B2

    公开(公告)日：2013-09-24

    申请号：US13091614

    申请日：2011-04-21

    申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang

    发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hui-Won Yang

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869 ,  H01L29/78606

    摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

    摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

    ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    10.
    发明申请
    ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    有机发光显示装置及其制造方法

    公开(公告)号：US20110127533A1

    公开(公告)日：2011-06-02

    申请号：US12955753

    申请日：2010-11-29

    申请人： Hyun-Joong Chung ,  Jin-Seong Park ,  Yeon-Gon Mo ,  Jong-Han Jeong

    发明人： Hyun-Joong Chung ,  Jin-Seong Park ,  Yeon-Gon Mo ,  Jong-Han Jeong

    IPC分类号： H01L51/50 ,  H01L51/40

    CPC分类号： H01L27/3258 ,  H01L51/5237 ,  H01L2251/5346

    摘要： An organic light-emitting display device which may be configured to prevent oxygen or water from penetrating from the outside and which may be more easily mass produced is disclosed. A method of manufacturing an organic light-emitting display device is also disclosed. The organic light-emitting display device may include, for example, a thin-film transistor (TFT) with a gate electrode, an active layer electrically insulated from the gate electrode, source and drain electrodes electrically insulated from the gate electrode and contacting the active layer, an organic light-emitting diode electrically connected to the TFT and an insulating layer interposed between the TFT and the organic light-emitting diode. The insulating layer may include, for example, a first insulating layer covering the TFT, a second insulating layer formed of metal oxide and formed on the first insulating layer and a third insulating layer formed of metal oxide or metal nitride and formed on the second insulating layer.

    摘要翻译： 公开了一种有机发光显示装置，其可以被配置为防止氧气或水从外部渗透并且可以更容易批量生产。 还公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如具有栅电极的薄膜晶体管（TFT），与栅极电绝缘的有源层，与栅电极电绝缘的源极和漏极，并与活性物质接触 电连接到TFT的有机发光二极管和介于TFT和有机发光二极管之间的绝缘层。 绝缘层可以包括例如覆盖TFT的第一绝缘层，由金属氧化物形成并形成在第一绝缘层上的第二绝缘层和由金属氧化物或金属氮化物形成的第三绝缘层，并形成在第二绝缘层上 层。