公开(公告)号：US07314515B2

公开(公告)日：2008-01-01

申请号：US11220709

申请日：2005-09-08

Applicant: Jai-yong Han

Inventor： Jai-yong Han

IPC: C30B1/00

CPC classification number: C30B29/406 ,  C30B25/00 ,  C30B25/02 ,  C30B25/08 ,  C30B29/64 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1016

Abstract: An apparatus for fabricating a GaN single crystal and a fabrication method for producing GaN single crystal ingot are provided. The apparatus includes: a reactor including a ceiling, a floor and a wall with a predetermined height encompassing an internal space between the ceiling and the floor, wherein the ceiling is opposite to the floor; a quartz vessel on the floor containing Ga metal; a mount installed on the ceiling on which a GaN substrate is mounted, the GaN substrate being opposite to the quartz vessel; a first gas supplying unit supplying the quartz vessel with hydrogen chloride (HCl) gas; a second gas supplying unit supplying the internal space of the reactor with ammonia (NH3) gas; and a heating unit installed in conjunction with the wall of the reactor for heating the internal space, wherein the lower portion of the internal space is heated to a higher temperature than the upper portion.

Abstract translation: 提供一种用于制造GaN单晶的装置和用于制造GaN单晶锭的制造方法。 该装置包括：包括天花板，地板和具有预定高度的壁的反应器，其包围天花板和地板之间的内部空间，其中天花板与地板相对; 位于地板上的含有Ga金属的石英容器; 安装在其上安装GaN衬底的天花板上的安装座，所述GaN衬底与所述石英容器相对; 向石英容器供应氯化氢（HCl）气体的第一气体供给单元; 向反应器的内部空间供应氨（NH 3）气体的第二气体供给单元; 以及与反应器的壁结合安装的用于加热内部空间的加热单元，其中内部空间的下部被加热到比上部更高的温度。

公开(公告)号：US20070082465A1

公开(公告)日：2007-04-12

申请号：US11545518

申请日：2006-10-11

Applicant: In-Jae Song ,  Jai-yong Han

Inventor： In-Jae Song ,  Jai-yong Han

IPC: H01L21/20

CPC classification number: C30B33/06 ,  C30B25/183 ,  C30B25/186 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02664

Abstract: A method of fabricating a freestanding gallium nitride (GaN) substrate includes: preparing a GaN substrate within a reactor; supplying HCl and NH3 gases into the reactor to treat the surface of the GaN substrate and forming a porous GaN layer; forming a GaN crystal growth layer on the porous GaN layer; and cooling the GaN substrate on which the GaN crystal growth layer has been formed and separating the GaN crystal growth layer from the substrate. According to the fabrication method, the entire process including forming a porous GaN layer and a thick GaN layer is performed in-situ within a single reactor. The method is significantly simplified compared to a conventional fabrication method. The fabrication method enables the entire process to be performed in one chamber while allowing GaN surface treatment and growth to be performed using HVPE process gases, thus resulting in a significant reduction in manufacturing costs. The fabrication method also allows self-separation of thick GaN without cracking, thus achieving a short process time and a high manufacturing yield.

Abstract translation: 制造独立氮化镓（GaN）衬底的方法包括：在反应器内制备GaN衬底; 将HCl和NH 3气体供应到反应器中以处理GaN衬底的表面并形成多孔GaN层; 在多孔GaN层上形成GaN晶体生长层; 并冷却已经形成GaN晶体生长层的GaN衬底，并从衬底分离出GaN晶体生长层。 根据制造方法，在单个反应器内原位进行包括形成多孔GaN层和厚GaN层的整个工艺。 与常规制造方法相比，该方法显着简化。 该制造方法能够在一个室中进行整个工艺，同时使用HVPE工艺气体进行GaN表面处理和生长，从而显着降低制造成本。 制造方法还允许厚的GaN的自分离而不产生裂纹，从而实现短的工艺时间和高的制造成品率。