公开(公告)号：US20180013006A1

公开(公告)日：2018-01-11

申请号：US15713077

申请日：2017-09-22

Applicant: Japan Display Inc.

Inventor： Miyuki ISHIKAWA ,  Arichika ISHIDA ,  Masayoshi FUCHI ,  Hajime WATAKABE ,  Takashi OKADA

IPC: H01L29/786 ,  H01L29/417 ,  H01L27/32 ,  H01L27/12 ,  H01L21/467 ,  H01L21/465 ,  H01L29/66 ,  H01L21/441

CPC classification number: H01L29/7869 ,  H01L21/441 ,  H01L21/465 ,  H01L21/467 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3272 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78633 ,  H01L29/78696

Abstract: According to one embodiment, a semiconductor device includes contact holes passing through a source region of a drain region of an interlayer insulating film and oxide semiconductor layer to reach an insulating substrate, wherein a source electrode and a drain electrode are formed inside the contact holes, respectively.

公开(公告)号：US20160172503A1

公开(公告)日：2016-06-16

申请号：US15051786

申请日：2016-02-24

Applicant: Japan Display Inc.

Inventor： Masato HIRAMATSU ,  Masayoshi FUCHI ,  Arichika ISHIDA

IPC: H01L29/786 ,  H01L21/443 ,  H01L29/66 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/443 ,  H01L21/465 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78696

Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.