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公开(公告)号:US11744111B2
公开(公告)日:2023-08-29
申请号:US17839864
申请日:2022-06-14
Applicant: Japan Display Inc.
Inventor: Satoshi Maruyama
IPC: H01L27/00 , H10K59/121 , H01L27/12 , H10K59/131 , H01L27/06 , H10K59/12 , H01L29/66 , H01L29/786
CPC classification number: H10K59/1213 , H01L27/1225 , H01L27/1251 , H01L27/1255 , H01L27/1259 , H10K59/1216 , H10K59/131 , H01L27/0688 , H01L27/124 , H01L27/1222 , H01L27/1262 , H01L29/66757 , H01L29/66969 , H01L29/7869 , H01L29/78675 , H10K59/1201
Abstract: A plurality of thin film transistors provided in a peripheral region are first staggered thin film transistors where a first channel layer configured of low-temperature polysilicon is included, and the first channel layer is not interposed between a first source electrode and a first gate electrode, and between a first drain electrode and the first gate electrode. A plurality of thin film transistors provided in a display region are second staggered thin film transistors where a second channel layer configured of an oxide semiconductor is included, and the second channel layer is not interposed between a second source electrode and a second gate electrode, and between a second drain electrode and the second gate electrode. The first thin film transistor is located below the second thin film transistor.
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公开(公告)号:US10510969B2
公开(公告)日:2019-12-17
申请号:US16174376
申请日:2018-10-30
Applicant: Japan Display Inc.
Inventor: Satoshi Maruyama
Abstract: A display device having an improved display characteristics and reduced manufacturing cost is provided. The display device includes a plurality of pixels arranged on a surface of a substrate. The plurality of pixels each include: a light-emitting element; a driving transistor; a selecting transistor; and a retention capacitor. The driving transistor has a bottom-gate structure. The driving transistor has a semiconductor layer containing a first semiconductor. The retention capacitor has a first electrode and a second electrode. The first electrode doubles as a gate of the driving transistor. The second electrode is disposed at a lower layer than the first electrode and contains a second semiconductor.
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公开(公告)号:US09773992B2
公开(公告)日:2017-09-26
申请号:US15091927
申请日:2016-04-06
Applicant: Japan Display Inc.
Inventor: Satoshi Maruyama , Masakazu Kaida , Hirohisa Tanaka , Takanobu Takenaka , Noriyoshi Kanda
CPC classification number: H01L51/5012 , H01L27/3246 , H01L51/5056 , H01L51/5212 , H01L51/5228 , H01L51/5271 , H01L51/56 , H01L2251/308
Abstract: An organic EL display device includes in order from a substrate side: a metal layer; an insulating layer formed on the metal layer; a first electrode layer formed on the insulating layer; an organic layer formed on the first electrode layer; and a second electrode layer formed on the organic layer. The metal layer is for use as a reflective layer configured to reflect, on a surface of the metal layer, light generated from the organic layer by applying a voltage between the first electrode layer and the second electrode layer.
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公开(公告)号:US11696494B2
公开(公告)日:2023-07-04
申请号:US17071378
申请日:2020-10-15
Applicant: Japan Display Inc.
Inventor: Satoshi Maruyama
IPC: H01L27/12 , H10K85/40 , H10K10/46 , H10K59/123 , H10K59/121 , H10K50/11
CPC classification number: H10K85/40 , H01L27/1225 , H01L27/1255 , H10K10/462 , H10K59/123 , H10K59/1213 , H10K59/1216 , H01L27/12 , H10K50/11
Abstract: A display device having an improved display characteristics and reduced manufacturing cost is provided. The display device includes a plurality of pixels arranged on a surface of a substrate. The plurality of pixels each include: a light-emitting element; a driving transistor; a selecting transistor; and a retention capacitor. The driving transistor has a bottom-gate structure. The driving transistor has a semiconductor layer containing a first semiconductor. The retention capacitor has a first electrode and a second electrode. The first electrode doubles as a gate of the driving transistor. The second electrode is disposed at a lower layer than the first electrode and contains a second semiconductor.
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公开(公告)号:US11258022B2
公开(公告)日:2022-02-22
申请号:US16846478
申请日:2020-04-13
Applicant: Japan Display Inc.
Inventor: Satoshi Maruyama
Abstract: A display device includes a flexible substrate, and a display region having a plurality of pixels on the flexible substrate. The substrate includes a resin layer, a first inorganic insulating layer provided on the first resin layer, and a second resin layer provided on the first insulating layer. A thickness of the second resin layer is larger than a thickness of the first resin layer, and the first resin layer is a resin layer baked at a higher baking temperature than the second resin layer.
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公开(公告)号:US11171198B2
公开(公告)日:2021-11-09
申请号:US16728104
申请日:2019-12-27
Applicant: Japan Display Inc.
Inventor: Hiroki Ohara , Satoshi Maruyama
IPC: H01L27/32 , G02F1/1362 , G06F1/16 , H01L51/00
Abstract: Disclosed is a display device including: a first conductive film over and in contact with a substrate; a first undercoat and a second undercoat over and in contact with the first conductive film; a pixel over the first undercoat; a wiring over the first undercoat, the first conductive film, and the second undercoat and in contact with the first conductive film between the first undercoat and the second undercoat. The first undercoat and the second undercoat are spaced from each other over the first conductive film and each cover a part of the first conductive film. The wiring is configured to form a terminal to which a signal for driving the pixel is input over the second undercoat.
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公开(公告)号:US10153446B2
公开(公告)日:2018-12-11
申请号:US15682649
申请日:2017-08-22
Applicant: Japan Display Inc.
Inventor: Satoshi Maruyama
Abstract: A display device having an improved display characteristics and reduced manufacturing cost is provided. The display device includes a plurality of pixels arranged on a surface of a substrate. The plurality of pixels each include: a light-emitting element; a driving transistor; a selecting transistor; and a retention capacitor. The driving transistor has a bottom-gate structure. The driving transistor has a semiconductor layer containing a first semiconductor. The retention capacitor has a first electrode and a second electrode. The first electrode doubles as a gate of the driving transistor. The second electrode is disposed at a lower layer than the first electrode and contains a second semiconductor.
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