公开(公告)号：US20060018172A1

公开(公告)日：2006-01-26

申请号：US11228311

申请日：2005-09-19

申请人： Kenichi Kuroda ,  Toshifumi Takeda ,  Hisahiro Moriuchi ,  Masaki Shirai ,  Jiroh Sakaguchi ,  Akinori Matsuo ,  Shoji Yoshida

发明人： Kenichi Kuroda ,  Toshifumi Takeda ,  Hisahiro Moriuchi ,  Masaki Shirai ,  Jiroh Sakaguchi ,  Akinori Matsuo ,  Shoji Yoshida

IPC分类号： G11C7/02

CPC分类号： H01L27/11526 ,  G11C16/0408 ,  G11C16/10 ,  G11C29/789 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11546

摘要： A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

公开(公告)号：US6064606A

公开(公告)日：2000-05-16

申请号：US1514

申请日：1997-12-31

申请人： Kenichi Kuroda ,  Toshifumi Takeda ,  Hisahiro Moriuchi ,  Masaki Shirai ,  Jiroh Sakaguchi ,  Akinori Matsuo ,  Shoji Yoshida

发明人： Kenichi Kuroda ,  Toshifumi Takeda ,  Hisahiro Moriuchi ,  Masaki Shirai ,  Jiroh Sakaguchi ,  Akinori Matsuo ,  Shoji Yoshida

IPC分类号： H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  G11C7/00

CPC分类号： H01L27/11526 ,  G11C16/0408 ,  G11C16/10 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11546 ,  G11C29/789

摘要： A nonvolatile storage element of single-layer gate structure constructed by arranging a floating gate formed of a conductive layer to partly overlap with a control gate formed of a diffused layer is provided with a barrier layer covering a part or the whole of the surface of the floating gate. Such nonvolatile storage elements are used for redundancy control of defects or change of functions.

摘要翻译： 通过布置由导电层形成的浮动栅极与由扩散层形成的控制栅极部分重叠而构成的单层栅极结构的非易失性存储元件设置有覆盖部分或全部表面的阻挡层 浮动门。 这种非易失性存储元件用于缺陷的冗余控制或功能的改变。

公开(公告)号：US5457335A

公开(公告)日：1995-10-10

申请号：US727409

申请日：1991-07-09

申请人： Kenichi Kuroda ,  Toshifumi Takeda ,  Hisahiro Moriuchi ,  Masaki Shirai ,  Jiroh Sakaguchi ,  Akinori Matsuo ,  Shoji Yoshida

发明人： Kenichi Kuroda ,  Toshifumi Takeda ,  Hisahiro Moriuchi ,  Masaki Shirai ,  Jiroh Sakaguchi ,  Akinori Matsuo ,  Shoji Yoshida

IPC分类号： H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/11526 ,  G11C16/0408 ,  G11C16/10 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/115 ,  H01L27/11519 ,  H01L27/11546 ,  G11C29/789

摘要： A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

摘要翻译： 单层栅型结构的非易失性存储元件被布置成使得浮置栅极由与扩散层形成的控制栅极部分重叠的导电层形成，并且设置有覆盖部分的阻挡层 或浮动门的整个表面。 其特征在于的非易失性存储元件用于缺陷的冗余控制或功能的改变。