公开(公告)号：US20050079294A1

公开(公告)日：2005-04-14

申请号：US10772511

申请日：2004-02-05

申请人： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Yih-Rong Luo

发明人： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Yih-Rong Luo

IPC分类号： B05D5/12 ,  C30B13/24 ,  C30B29/06 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786

CPC分类号： H01L21/02686 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78603

摘要： A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the heat sink layer is greater than that of the substrate. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer on the substrate to form polysilicon having a crystal size of a micrometer.

摘要翻译： 在衬底的部分上形成散热层，然后在其上形成非晶硅层。 散热层的热系数大于衬底的热系数。 当准分子激光器加热非晶硅层以使非晶硅结晶时，在散热层上的非晶硅层中形成成核位点。 接着，在基板上的非晶硅层发生横向膨胀结晶，形成晶体尺寸为微米的多晶硅。

公开(公告)号：US20050059190A1

公开(公告)日：2005-03-17

申请号：US10673325

申请日：2003-09-30

申请人： Chi-Shen Lee ,  Cheng-Chung Chen ,  Chi-Lin Chen ,  Chai-Yuan Sheu

发明人： Chi-Shen Lee ,  Cheng-Chung Chen ,  Chi-Lin Chen ,  Chai-Yuan Sheu

IPC分类号： H01L29/423 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/13 ,  H01L29/417 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L27/124 ,  H01L27/1255

摘要： A method of fabricating thin film transistor TFT array discloses ions of desired-plated metal and the graphs of the desired-plated area are made by oxidation-reduction materials processes ion replacement for implementing the metal wiring layout of the TFT-LCDs. This, therefore, can overcome the problem of uneasy metal etching thereto achieves the purpose of an automatic alignment. The method uses the ability of the oxidation-reduction reaction to implement the replacement for alternating the lithography etching process in the metal wiring layout as presented in the traditional technique.

摘要翻译： 制造薄膜晶体管TFT阵列的方法公开了所需电镀金属的离子，并且通过氧化还原材料制造所需电镀区域的图形来处理用于实现TFT-LCD的金属布线布局的离子替换。 因此，能够克服金属蚀刻不牢的问题，能够实现自动对准的目的。 该方法使用氧化还原反应的能力来实现在传统技术中呈现的金属布线布局中交替光刻蚀刻工艺的替代。

公开(公告)号：US5307255A

公开(公告)日：1994-04-26

申请号：US12384

申请日：1993-02-02

申请人： Chi-Lin Chen

发明人： Chi-Lin Chen

IPC分类号： F16M11/20 ,  F21V21/06 ,  F21V23/00 ,  F21V31/00

CPC分类号： F21V21/06 ,  F16M11/046 ,  F21L14/00 ,  F21V21/30 ,  F21V23/04 ,  F21V27/00 ,  F21V31/00 ,  F16M2200/08 ,  F21V15/02 ,  F21V21/40 ,  F21W2131/1005

摘要： An improved structure of portable quartz lamp with a lamp housing having a handle and a central post therebeneath, which has between a stand and the central post a connecting piece having a hollowed interior and has an upper and a lower axial pipe portions, the upper one is threadably connected with the central post, and the lower one has its bottom end supported on a top surface of the stand and connected with a bolt thereunder; power conductors are connected in such a way that they will not be tangled with one another when in adjustment of light intensity; the rear surface of the connecting piece has a case for shielding the adjusting mechanism; the adjustment can therefore be effected unafraid of rain infiltration.

摘要翻译： 便携式石英灯的改进结构，其具有手柄和位于其下方的中心柱的灯壳体，其在支架和中心柱之间具有中空柱体，该连接件具有中空的内部并且具有上部和下部轴向管部分， 与中心柱螺纹连接，下部的底端支撑在支架的顶面上，并与其下方的螺栓连接; 电源导体以这样的方式连接，使得它们在调节光强度时不会彼此缠结; 连接件的后表面具有用于屏蔽调节机构的壳体; 因此，这种调整可以不受雨水渗透的影响。

公开(公告)号：US08449146B2

公开(公告)日：2013-05-28

申请号：US13156988

申请日：2011-06-09

申请人： Chi-Lin Chen

发明人： Chi-Lin Chen

IPC分类号： F21S4/00 ,  F21S8/00 ,  F21V21/00 ,  F21L19/00 ,  F21L4/04

CPC分类号： F21V15/013 ,  F21V21/005 ,  F21V21/30 ,  F21W2131/101 ,  F21Y2115/10

摘要： A LED lamp assembly for use in a long passage includes an elongated rectangular housing carrying multiple power-output electric connectors, a power-input electric connector and a power switch, a flat rectangular light source having a light-emitting face and selectively fastened to a rectangular top end of housing in one of four angular positions that spaced from one another at 90° angle, and a mounting plate extending perpendicularly from one side of the rectangular end wall of the housing having a plurality a plurality of equiangularly spaced and smoothly arched mounting slots for mounting.

摘要翻译： 用于长通道的LED灯组件包括承载多个功率输出电连接器的细长矩形外壳，电源输入电连接器和电源开关，具有发光面的平面矩形光源，并选择性地固定到 壳体的矩形顶端以四个角度位置中的一个以90°角彼此间隔开;以及安装板，其垂直于从壳体的矩形端壁的一侧垂直延伸，该安装板具有多个等距间隔且平滑的拱形安装 插槽用于安装。

公开(公告)号：US08363033B2

公开(公告)日：2013-01-29

申请号：US12814497

申请日：2010-06-14

申请人： Ke-Horng Chen ,  Shih-Wei Wang ,  Chi-Lin Chen ,  Chih-Chung Chen ,  Chia-Lin Liu ,  Huai-An Li ,  Chi-Neng Mo

发明人： Ke-Horng Chen ,  Shih-Wei Wang ,  Chi-Lin Chen ,  Chih-Chung Chen ,  Chia-Lin Liu ,  Huai-An Li ,  Chi-Neng Mo

IPC分类号： G06F3/045

CPC分类号： G06F3/044

摘要： A capacitance sensing circuit for a touch panel includes an analog capacitance-detecting circuit, a PWM-to-digital circuit and a self-calibration circuit. The analog capacitance-detecting circuit detects the capacitance of the touch panel based on a charging current, and converts the detected capacitance into a PWM control signal. The PWM-to-digital circuit converts the PWM control signal into a sensing count value based on a clock signal. The self-calibration circuit adjusts the value of the charging current or the frequency of the clock signal according to the difference between the range of the sensing count value and a predetermined detecting range. The predetermined detecting range can thus be adjusted for matching the range of the sensing count value.

摘要翻译： 用于触摸屏的电容感测电路包括模拟电容检测电路，PWM到数字电路和自校准电路。 模拟电容检测电路基于充电电流检测触摸面板的电容，并将检测到的电容转换为PWM控制信号。 PWM到数字电路基于时钟信号将PWM控制信号转换成感测计数值。 自校准电路根据感测计数值的范围与规定的检测范围的差来调整充电电流的值或时钟信号的频率。 因此可以调整预定的检测范围，以匹配感测计数值的范围。

公开(公告)号：USD669207S1

公开(公告)日：2012-10-16

申请号：US29410458

申请日：2012-01-09

申请人： Chi-Lin Chen

设计人： Chi-Lin Chen

公开(公告)号：US08232743B2

公开(公告)日：2012-07-31

申请号：US12831231

申请日：2010-07-06

申请人： Ke-Horng Chen ,  Chi-Lin Chen ,  Yao-Yi Yang ,  Ling Li ,  Chia-Lin Liu ,  Chi-Neng Mo

发明人： Ke-Horng Chen ,  Chi-Lin Chen ,  Yao-Yi Yang ,  Ling Li ,  Chia-Lin Liu ,  Chi-Neng Mo

IPC分类号： H05B37/02

CPC分类号： H05B33/0818 ,  H05B33/0815

摘要： A voltage converter for use in a backlight module stores energy of an input voltage using an inductor and outputs a plurality of output voltages accordingly. The charging path of the inductor is controlled according to the first output voltage so that the first output voltage can be stabilized. The discharging paths from the inductor to other output voltages are controlled according to the differences between other output voltages and the first output voltage so that other output voltages can also be stabilized.

摘要翻译： 用于背光模块的电压转换器使用电感器存储输入电压的能量并相应地输出多个输出电压。 根据第一输出电压来控制电感器的充电路径，使得第一输出电压可以稳定。 根据其他输出电压和第一输出电压之间的差异，从电感器到其他输出电压的放电路径进行控制，以便其他输出电压也可以稳定。

公开(公告)号：US07927929B2

公开(公告)日：2011-04-19

申请号：US12371625

申请日：2009-02-16

申请人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

发明人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

IPC分类号： H01L29/04

CPC分类号： H01L21/268 ,  H01L21/28008 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side.

摘要翻译： 制造薄膜晶体管（TFT）的方法包括首先提供作为具有预定长边和短边的薄膜区域的条状硅岛。 接下来，条状硅岛经受离子注入以形成第一离子掺杂区和第二离子掺杂区。 分别用作TFT的源极和漏极的第一和第二离子掺杂区域位于岛的长边的两侧并且基本上垂直于栅极。 栅极形成在带状硅岛和第一和第二离子掺杂区之上，其中栅极基本上平行于短边的方向。

公开(公告)号：US20090142886A1

公开(公告)日：2009-06-04

申请号：US12371625

申请日：2009-02-16

申请人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

发明人： Chi-Lin Chen ,  Yu-Cheng Chen ,  Hsing-Hua Wu ,  Po-Tsun Liu

IPC分类号： H01L21/336

CPC分类号： H01L21/268 ,  H01L21/28008 ,  H01L29/4238 ,  H01L29/4916 ,  H01L29/66757 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/78696

摘要： A method of fabricating a thin film transistor (TFT) includes first providing a strip-shaped silicon island which is a thin film region with a predetermined long side and short side. Next, the strip-shaped silicon island is subject to an ion implantation to form a first ion doping region and a second ion doping region. The first and second ion doping regions, respectively used as the source and the drain of the TFT, are located at two sides along the long side of the island and substantially perpendicular to the gate. A gate is formed over the strip-shaped silicon island and the first and second ion doping regions, wherein the gate is substantially parallel to the direction of the short side.

摘要翻译： 制造薄膜晶体管（TFT）的方法包括首先提供作为具有预定长边和短边的薄膜区域的条状硅岛。 接下来，条状硅岛经受离子注入以形成第一离子掺杂区和第二离子掺杂区。 分别用作TFT的源极和漏极的第一和第二离子掺杂区域位于岛的长边的两侧并且基本上垂直于栅极。 栅极形成在带状硅岛和第一和第二离子掺杂区之上，其中栅极基本上平行于短边的方向。

公开(公告)号：US20080029902A1

公开(公告)日：2008-02-07

申请号：US11870426

申请日：2007-10-11

申请人： Yu-Cheng Chen ,  Chi-Lin Chen ,  Chi-Ming Chang

发明人： Yu-Cheng Chen ,  Chi-Lin Chen ,  Chi-Ming Chang

IPC分类号： H01L23/52

CPC分类号： H01L27/1288 ,  G02F1/1368 ,  H01L27/124

摘要： A multi-layered complementary conductive line structure, a manufacturing method thereof and a manufacturing method of a TFT (thin film transistor) display array are provided. The process of TFT having multi-layered complementary conductive line structures does not need to increase the mask number in comparison with the currently process and is able to solve the resistance problem of the lines inside a display.

摘要翻译： 提供多层互补导电线结构，其制造方法和TFT（薄膜晶体管）显示阵列的制造方法。 具有多层互补导电线结构的TFT的工艺与当前工艺相比不需要增加掩模数，并且能够解决显示器内部的线的电阻问题。