公开(公告)号：US4500365A

公开(公告)日：1985-02-19

申请号：US467188

申请日：1983-02-16

申请人： Haruhisa Mori

发明人： Haruhisa Mori

IPC分类号： H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/263

CPC分类号： H01L21/268 ,  H01L21/324

摘要： A method of manufacturing a semiconductor device wherein a surface region of a semiconductor substrate is selectively heated by irradiation of a laser beam of a wavelength .lambda.. The method includes the steps of opening a window through an insulating layer formed on the surface of the semiconductor substrate, coating on the entire surface of the substrate a light transmitting film having an index n of refraction in such a manner that the thickness of the film over the exposed window part is equal, or substantially equal, to the value of .lambda./4n or .lambda./4n times an odd number, and then carrying out the irradiation of the laser beam. A photo-resist, thermally grown silicon dioxide film, silicon dioxide film by chemical vapor deposition, CVD phosphosilicate glass, or a glass film formed by coating hydroxide of silicon or its high molecule polymer is employed as the light transmitting film.

摘要翻译： 一种制造半导体器件的方法，其中半导体衬底的表面区域通过辐射波长λ的激光束被选择性地加热。 该方法包括以下步骤：通过形成在半导体衬底的表面上的绝缘层打开窗口，在衬底的整个表面上涂覆具有折射率n的折射率的透光膜，使得膜的厚度 暴露的窗口部分与λ/ 4n或λ/ 4n的奇数值相等或基本相等，然后执行激光束的照射。 光致抗蚀剂，热生长二氧化硅膜，通过化学气相沉积的二氧化硅膜，CVD磷硅玻璃或通过涂覆硅或其高分子聚合物的氢氧化物形成的玻璃膜被用作透光膜。

公开(公告)号：US4375993A

公开(公告)日：1983-03-08

申请号：US252216

申请日：1981-04-08

申请人： Haruhisa Mori ,  Hajime Kamioka ,  Motoo Nakano ,  Nobuo Sasaki

发明人： Haruhisa Mori ,  Hajime Kamioka ,  Motoo Nakano ,  Nobuo Sasaki

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/208 ,  H01L21/263 ,  H01L21/268 ,  H01L21/321 ,  H01L21/324 ,  H01L21/265

CPC分类号： H01L21/321 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268 ,  Y10S148/09 ,  Y10S148/091 ,  Y10S148/093 ,  Y10S148/123

摘要： A method of producing a semiconductor device which comprises steps of forming an insulator layer on a semiconductor substrate, forming a semiconductor layer on the insulator layer and then annealing the semiconductor layer by means of a first laser with a second laser being applied to the insulator layer to heat it while the first layer is applied to the semiconductor laser.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成绝缘体层，在绝缘体层上形成半导体层，然后借助第一激光器对半导体层进行退火，第二激光被施加到绝缘体层 以在将第一层施加到半导体激光器时加热它。