公开(公告)号：US4375993A

公开(公告)日：1983-03-08

申请号：US252216

申请日：1981-04-08

申请人： Haruhisa Mori ,  Hajime Kamioka ,  Motoo Nakano ,  Nobuo Sasaki

发明人： Haruhisa Mori ,  Hajime Kamioka ,  Motoo Nakano ,  Nobuo Sasaki

IPC分类号： H01L29/78 ,  H01L21/20 ,  H01L21/208 ,  H01L21/263 ,  H01L21/268 ,  H01L21/321 ,  H01L21/324 ,  H01L21/265

CPC分类号： H01L21/321 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/268 ,  Y10S148/09 ,  Y10S148/091 ,  Y10S148/093 ,  Y10S148/123

摘要： A method of producing a semiconductor device which comprises steps of forming an insulator layer on a semiconductor substrate, forming a semiconductor layer on the insulator layer and then annealing the semiconductor layer by means of a first laser with a second laser being applied to the insulator layer to heat it while the first layer is applied to the semiconductor laser.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成绝缘体层，在绝缘体层上形成半导体层，然后借助第一激光器对半导体层进行退火，第二激光被施加到绝缘体层 以在将第一层施加到半导体激光器时加热它。

公开(公告)号：US4275093A

公开(公告)日：1981-06-23

申请号：US048069

申请日：1979-06-13

申请人： Nobuo Sasaki ,  Yasuo Kobayashi ,  Ryoiku Tohgei ,  Takashi Iwai ,  Motoo Nakano

发明人： Nobuo Sasaki ,  Yasuo Kobayashi ,  Ryoiku Tohgei ,  Takashi Iwai ,  Motoo Nakano

IPC分类号： H01L27/12 ,  H01L21/316 ,  H01L21/762 ,  H01L21/86 ,  H01L29/78

CPC分类号： H01L21/02238 ,  H01L21/02255 ,  H01L21/31662 ,  H01L21/76264 ,  H01L21/76281 ,  Y10S438/909

摘要： A method of manufacturing SOS type semiconductor devices having small leakage current comprising the steps of forming a single crystal semiconductor film on an insulator single crystal substrate, selectively forming a film for masking against oxidation on the surface of the single crystal semiconductor film, and thermally oxidizing the single crystal semiconductor film, in a region which is not covered with the masking film, down to the surface of the insulating single crystal substrate in a water vapor atmosphere having a high pressure which is at least more than atmospheric pressure.

摘要翻译： 一种制造具有小的漏电流的SOS型半导体器件的方法，包括以下步骤：在绝缘体单晶衬底上形成单晶半导体膜，在单晶半导体膜的表面上选择性地形成用于掩蔽抗氧化的膜，以及热氧化 在没有被掩模膜覆盖的区域中的单晶半导体膜在具有至少大于大气压的高压的水蒸汽气氛中向下到达绝缘单晶基板的表面。

公开(公告)号：US4262340A

公开(公告)日：1981-04-14

申请号：US92858

申请日：1979-11-09

申请人： Nobuo Sasaki ,  Yasuo Kobayashi ,  Takashi Iwai ,  Motoo Nakano

发明人： Nobuo Sasaki ,  Yasuo Kobayashi ,  Takashi Iwai ,  Motoo Nakano

IPC分类号： G11C11/41 ,  G11C5/06 ,  G11C8/08 ,  G11C11/408 ,  G11C11/412 ,  G11C11/418 ,  H01L27/11 ,  G11C11/40

CPC分类号： G11C11/418 ,  G11C11/4085 ,  G11C11/412 ,  G11C5/063 ,  G11C8/08 ,  H01L27/1104 ,  H01L27/1108

摘要： A semiconductor memory device provides a plurality of bit lines, a plurality of memory cells each of which is connected to a pair of different bit lines, a plurality of common word wires each of which is connected to the memory cells via a transmission gate. A characteristic feature of the present invention is to provide at least one amplifier between two memory cells which are connected to a word line or a bit line so as to prevent an increase of the access time of the memory device.

摘要翻译： 半导体存储器件提供多个位线，多个存储单元，每个存储单元都连接到一对不同的位线，多个公共字线，每个通常的字线经由传输门连接到存储单元。 本发明的特征在于提供连接到字线或位线的两个存储单元之间的至少一个放大器，以防止存储器件的访问时间的增加。

公开(公告)号：US4425700A

公开(公告)日：1984-01-17

申请号：US290972

申请日：1981-08-07

申请人： Nobuo Sasaki ,  Motoo Nakano

发明人： Nobuo Sasaki ,  Motoo Nakano

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/482 ,  H01L23/52 ,  H01L29/786 ,  H01L21/86 ,  H01L21/88

CPC分类号： H01L21/32055 ,  H01L21/76889 ,  H01L23/4825 ,  H01L2924/0002 ,  Y10S148/15

摘要： The method of manufacture of a semiconductor device having wirings or electrodes of silicide formed by: exposing parts of a single-crystal silicon layer formed on an insulating substrate, forming a film of metal over the exposed parts, and annealing so that a silicide is formed of the silicon and metal throughout the entire thickness of the silicon layer. The single-crystal silicon layer may be formed on a sapphire or spinel substrate having a film of silicon dioxide, sapphire or spinel, epitaxially grown on a silicon substrate.

摘要翻译： 制造具有硅化物接线或半导体器件的半导体器件的方法，该半导体器件通过以下步骤形成：将形成在绝缘衬底上的单晶硅层的部分暴露在暴露部分上形成金属膜，然后进行退火以形成硅化物 的硅层和金属层的整个厚度。 单晶硅层可以形成在具有在硅衬底上外延生长的二氧化硅，蓝宝石或尖晶石膜的蓝宝石或尖晶石衬底上。

公开(公告)号：US08687163B2

公开(公告)日：2014-04-01

申请号：US13509941

申请日：2010-08-09

申请人： Nobuo Sasaki

发明人： Nobuo Sasaki

IPC分类号： G02F1/1339 ,  G02F1/1337

CPC分类号： G02F1/1339 ,  G02F1/1337

摘要： The present invention provides a display panel that can improve the adhesion strength of a sealing member and that can reduce moisture permeation caused by an alignment film without performing a treatment to remove the alignment film. A display panel according to the present invention is a display panel having a pair of substrates attached to each other via a sealing member. At least one of the pair of substrates has a configuration in which a transparent resin film and an alignment film are laminated. In the display panel, a side face of an edge of the transparent resin film has a reverse tapered shape; the alignment film is separated at the side face of the edge; and the transparent resin film and the sealing member are attached to each other without having the alignment film therebetween.

摘要翻译： 本发明提供一种显示面板，其可以提高密封构件的粘合强度，并且可以减少由取向膜引起的水分渗透，而不进行处理以除去取向膜。 根据本发明的显示面板是具有经由密封构件彼此附接的一对基板的显示面板。 一对基板中的至少一个具有层叠透明树脂膜和取向膜的构造。 在显示面板中，透明树脂膜的边缘的侧面呈倒锥状， 取向膜在边缘的侧面分离; 并且透明树脂膜和密封构件彼此附接而不在其间具有取向膜。

公开(公告)号：US08455038B2

公开(公告)日：2013-06-04

申请号：US12946299

申请日：2010-11-15

申请人： Koichi Amaya ,  Yukinori Urushizaki ,  Hideto Matsubara ,  Nobuo Sasaki ,  Yuichi Tei

发明人： Koichi Amaya ,  Yukinori Urushizaki ,  Hideto Matsubara ,  Nobuo Sasaki ,  Yuichi Tei

IPC分类号： A61F2/30 ,  B32B37/02 ,  B32B43/00 ,  B23K15/00

CPC分类号： A61L27/50 ,  A61L2430/02 ,  B33Y40/00 ,  B33Y80/00

摘要： A method for producing an artificial bone capable of accurate molding at a joined part with appropriate strength, in which electromagnetic waves or electron beams are irradiated to a layer of at least type of powder selected from metal biomaterials, ceramics for the artificial bone and plastic resins for the artificial bone based on image data corresponding to a shape of the artificial bone, thereby effecting sintering or melting, and the thus sintered layer or melted and solidified layer is laminated, such that a surface finish step is adopted that inner faces and/or outer faces of both ends and their vicinities configuring the joined part to a human bone part are polished by a rotating tool based on the image data and also irradiation of electromagnetic waves or electron beams at both ends and their vicinities constituting the joined part is set greater than that at other regions.

摘要翻译： 一种用于制造能够以适当强度在接合部分精确模制的人造骨的方法，其中电磁波或电子束照射到选自金属生物材料，人造骨的陶瓷和塑料树脂中的至少一种粉末的层 基于对应于人造骨的形状的图像数据进行人造骨，由此进行烧结或熔化，并且将这样的烧结层或熔融固化层层合，从而采用表面精加工步骤，即内表面和/或 基于图像数据，通过旋转工具对构成接合部的人骨部分的两端及其附近的外表面进行抛光，并且构成接合部的两端及其附近的电磁波或电子束的照射被设定为更大 比其他地区。

公开(公告)号：US07664922B2

公开(公告)日：2010-02-16

申请号：US11431965

申请日：2006-05-11

申请人： Katsushi Ohtsuka ,  Nobuo Sasaki

发明人： Katsushi Ohtsuka ,  Nobuo Sasaki

IPC分类号： G06F12/00

CPC分类号： G06F13/1647

摘要： When a concentration of access requests on a specific bank occurs, the delay time is caused due to the competition among the accesses, thereby lowering the processing speed of an information processing apparatus as a whole. A data transfer arbitration unit 172 sequentially transfers data to be recorded to a memory controller 160 that records data in memory having a plurality of banks. A selector 174 selects any DMAC 170 from among a plurality of DMACs, irrespective of priority sequence of transfer service for the DMAC. A transmitter 176 transmits, to a control-side transfer unit 114, data requested to be transferred by the selected DMAC 170. The selector 174 selects consecutively the DMAC 170 so that the transfer service for the same DMAC is consecutively executed, and determines the number of consecutive selections so that a transfer across the banks of the DMAC 170 occurs by a plurality of the transfer services.

摘要翻译： 当在特定存储体上存在访问请求的集中时，由于访问之间的竞争引起延迟时间，从而降低了信息处理设备整体的处理速度。 数据传输仲裁单元172将要记录的数据顺序地传送到存储器控制器160，存储器控制器160将数据记录在具有多个存储体的存储器中。 选择器174从多个DMAC中选择任何DMAC 170，而与DMAC的传送服务的优先顺序无关。 发送器176向控制侧传送单元114发送请求由所选择的DMAC 170传送的数据。选择器174连续选择DMAC 170，使得连续执行相同DMAC的传送服务，并确定该号码 的连续选择，使得跨越DMAC 170的存储体的传输由多个传送服务发生。

公开(公告)号：US20090098061A1

公开(公告)日：2009-04-16

申请号：US11917026

申请日：2006-06-08

申请人： Shigeki Suzuki ,  Yoshikatsu Miwa ,  Nobuo Sasaki ,  Yuiichi Tei

发明人： Shigeki Suzuki ,  Yoshikatsu Miwa ,  Nobuo Sasaki ,  Yuiichi Tei

IPC分类号： A61K9/12 ,  C13K13/00 ,  A61K31/715

CPC分类号： A61K31/7016 ,  A61L31/042

摘要： The objective of the invention is to provide a solution for tissue adhesion prevention and a method for tissue adhesion prevention that are applicable to general surgery and in which covering condition during surgery is stable and convenient. The invention is the solution for tissue adhesion prevention of which the active ingredient is trehalose. Also, it contains at least one or more among antioxidants, chelates, antiseptics, hemostatics, anti-inflammatory agents, and polysaccharides, mucopolysaccharides, salts of polysaccharides and salts of mucopolysaccharides having lubricating properties. This solution for tissue adhesion prevention is provided as any form of perfusion fluid, spray fluid, solution for spray or vaporization administration, foam-like aerosol preparation, injection solution for intravenous fluids, intravenous fluid.

摘要翻译： 本发明的目的是提供一种适用于一般手术的组织粘连防止方法和组织粘连防止方法，其中手术中的覆盖状态是稳定和方便的。 本发明是用于组织粘附预防的方法，其中活性成分是海藻糖。 此外，它还含有至少一种或多种抗氧化剂，螯合物，防腐剂，止血剂，抗炎剂和多糖，粘多糖，多糖的盐和具有润滑性质的粘多糖的盐中的至少一种或多种。 用于组织粘附防止的这种解决方案提供为任何形式的灌注液，喷雾液，用于喷雾或蒸发给药的溶液，泡沫状气溶胶制剂，静脉注射液注射液，静脉注射液。

公开(公告)号：US07375712B2

公开(公告)日：2008-05-20

申请号：US10316434

申请日：2002-12-11

申请人： Nobuo Sasaki

发明人： Nobuo Sasaki

IPC分类号： G09G3/36

CPC分类号： G09G3/3659 ,  G02F1/136286 ,  G02F2001/136245 ,  G09G3/3614 ,  G09G2300/0823 ,  G09G2310/06

摘要： The invention provides an active matrix type TFT LCD in which a driving voltage of pixel TFTs is reduced. A pixel is formed with two thin film transistors, i.e., a positive-voltage-applying n-channel TFT for applying a data voltage having a positive polarity to a pixel electrode and a negative-voltage-applying p-channel TFT for applying a data voltage having a negative polarity to the pixel electrode. A source electrode of the positive-voltage-applying TFT is connected to the pixel electrode; a drain electrode of the same is connected to a data bus line for applying the positive voltage; and a gate electrode of the same is connected to a gate bus line for applying the positive voltage. A source electrode of the other TFT is also connected to the pixel electrode; a drain electrode of the same is connected to a data bus line for applying the negative voltage; and a gate electrode of the same is connected to a gate bus line for applying the negative voltage.

摘要翻译： 本发明提供一种有源矩阵型TFT LCD，其中像素TFT的驱动电压降低。 像素形成有两个薄膜晶体管，即用于向像素电极施加具有正极性的数据电压的正电压施加n沟道TFT和用于施加数据的负电压施加p沟道TFT 对像素电极具有负极性的电压。 正电压施加TFT的源电极连接到像素电极; 其漏电极连接到用于施加正电压的数据总线; 并且其栅电极连接到用于施加正电压的栅极总线。 另一TFT的源电极也连接到像素电极; 其漏电极连接到用于施加负电压的数据总线; 并且其栅电极连接到用于施加负电压的栅极总线。

公开(公告)号：US20080062498A1

公开(公告)日：2008-03-13

申请号：US11980287

申请日：2007-10-30

申请人： Nobuo Sasaki ,  Tatsuya Uzuka ,  Koichi Ohki

发明人： Nobuo Sasaki ,  Tatsuya Uzuka ,  Koichi Ohki

IPC分类号： G02B26/02 ,  G02B27/10

CPC分类号： H01L21/02683 ,  B23K26/067 ,  B23K26/0676 ,  B23K26/08 ,  B23K26/0884 ,  B23K2101/006 ,  B23K2101/40 ,  C30B13/24 ,  C30B35/00 ,  G02B19/0014 ,  G02B19/0057 ,  G02B27/144 ,  G02B27/145 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/6675 ,  H01L29/78672 ,  Y10T29/41

摘要： Laser beams emitted by a plurality of laser sources are divided into a plurality of sub-beams, which are irradiated onto selected portions of an amorphous semiconductor on a substrate to crystallize the amorphous semiconductor. A difference in diverging angles between the laser beams is corrected by a beam expander. The apparatus includes a sub-beam selective irradiating system including a sub-beam dividing assembly and a sub-beam focussing assembly. Also, the apparatus includes laser sources, a focussing optical system, and a combining optical system. A stage for supporting a substrate includes a plurality of first stage members, a second stage member disposed above the first stage members, and a third stage member 38C, rotatably disposed above the second stage to support an amorphous semiconductor.

摘要翻译： 由多个激光源发射的激光束被分成多个子光束，这些子光束照射到衬底上的非晶半导体的选定部分上以使非晶半导体结晶。 通过光束扩展器校正激光束之间的发散角度的差异。 该装置包括一个子光束选择性照射系统，它包括一个子光束分割组件和一个子光束聚焦组件。 而且，该装置还包括激光源，聚焦光学系统和组合光学系统。 用于支撑基板的台阶包括多个第一平台构件，设置在第一平台构件上方的第二平台构件以及可旋转地设置在第二平台上方以支撑非晶半导体的第三平台构件38C。