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12 条记录 (耗时 0.012 秒)

    Method of producing a semiconductor device
    1.
    发明授权
    Method of producing a semiconductor device 失效
    半导体装置的制造方法

    公开(公告)号：US4889820A

    公开(公告)日：1989-12-26

    申请号：US321201

    申请日：1989-03-09

    申请人： Haruhisa Mori

    发明人： Haruhisa Mori

    IPC分类号： H01L21/336 ,  H01L21/265 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/78

    CPC分类号： H01L27/1126

    摘要： A method of producing a semiconductor device comprises the steps of: preparing a semiconductor substrate, forming a gate insulating layer on the semiconductor substrate, forming a gate electrode on the gate insulating layer, forming a source/drain region in the semiconductor substrate, forming an insulating cover layer on the entire exposed surface, forming a mask on the insulating cover layer having an opening over the gate electrode, implanting one conductivity type impurity ions into the semiconductor substrate through the insulating cover layer, the gate electrode and the gate insulating layer as a first ion implanting process, implanting opposite conductivity type impurity ions into the semiconductor substrate therethrough as a second implanting process, at an implanting angle larger than that used in the first ion implanting process with respect to the normal plane of the semiconductor substrate and to substantially the same depth as the first ion implanting process, and at a dosage smaller than that in the first ion implanting process, whereby the one conductivity type impurity ions at laterally spread portions are compensated.

    Selective epitaxy by beam energy and devices thereon
    2.
    发明授权
    Selective epitaxy by beam energy and devices thereon 失效
    通过光束能量和其上的器件选择性外延

    公开(公告)号：US4381202A

    公开(公告)日：1983-04-26

    申请号：US247376

    申请日：1981-03-25

    申请人： Haruhisa Mori ,  Tsutomu Ogawa ,  Takashi Matsumoto

    发明人： Haruhisa Mori ,  Tsutomu Ogawa ,  Takashi Matsumoto

    IPC分类号： H01L29/73 ,  H01L21/20 ,  H01L21/22 ,  H01L21/225 ,  H01L21/263 ,  H01L21/268 ,  H01L21/331 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/04 ,  H01L29/06 ,  H01L29/78 ,  H01L21/265

    CPC分类号： H01L21/268 ,  H01L21/2257 ,  H01L21/2636 ,  H01L29/04 ,  H01L29/0653 ,  Y10S148/046 ,  Y10S148/09 ,  Y10S148/091

    摘要： A semiconductor device in which an insulating layer having a window is formed on a semiconductor substrate, a semiconductor layer is formed on the insulating layer and a semiconductor element is formed on the semiconductor layer, has the advantages of high-speed operation and low power consumption. A conventional manufacturing method involves a high-temperature, time-consuming step by which the semiconductor layer for forming thereon the semiconductor element is formed so that it may have a proper impurity concentration. In the present invention, however, a portion of the semiconductor layer and a portion of the underlying substrate are rendered molten by annealing with an energy beam as of a laser, by which an impurity contained in the substrate is diffused into the semiconductor layer. Accordingly, no high-temperature, time-consuming step is involved in the present invention, permitting the production of a semiconductor device of excellent characteristics.

    摘要翻译： 在半导体衬底上形成有具有窗口的绝缘层的半导体器件，在绝缘层上形成半导体层，在半导体层上形成半导体元件，具有高速运行和低功耗的优点 。 常规的制造方法包括高温耗时的步骤，通过该步骤形成用于在其上形成半导体元件的半导体层，使得其可以具有适当的杂质浓度。 然而，在本发明中，半导体层的一部分和下面的基板的一部分通过用激光的能量束进行退火而熔化，通过该激光将包含在基板中的杂质扩散到半导体层中。 因此，本发明不涉及高温，耗时的步骤，能够制造出具有优异特性的半导体装置。

    Plasma generating device with stepped waveguide transition
    3.
    发明授权
    Plasma generating device with stepped waveguide transition 失效
    等离子体发生器件，具有阶梯式波导过渡

    公开(公告)号：US4788473A

    公开(公告)日：1988-11-29

    申请号：US63972

    申请日：1987-06-19

    申请人： Haruhisa Mori ,  Motoo Nakano ,  Yoshinobu Ono ,  Takashi Igarashi ,  Masanao Hotta

    发明人： Haruhisa Mori ,  Motoo Nakano ,  Yoshinobu Ono ,  Takashi Igarashi ,  Masanao Hotta

    IPC分类号： H01J27/18 ,  H01J37/08 ,  H01J37/32 ,  H01J3/04

    CPC分类号： H01J37/32229 ,  H01J27/18 ,  H01J37/08

    摘要： A plasma generating device comprises:a rectangular wave guide for transmitting microwaves, wherein the width of the plasma generating device is decreased in the direction of an electrical field of the microwaves; a plasma generating chamber wherein plasma is generated by absorbing, in a gas, microwave energy transmitted by the rectangular wave guide, and a part of the plasma generating chamber has a rectangular cross-section taken along the plane perpendicular to the microwave propagation direction. A magnetic field generating device is provided having the same axial direction as the direction of propagation of the microwaves and applies a magnetic field having an Electron Cyclotron Resonance intensity to the plasma generating chamber. The magnetic field generating device is provided at least one location outside of the direction of the microwave electrical field direction, and a dielectric window is provided between the rectangular wave guide and the plasma generating chamber to realize a vacuum seal of the plasma generating chamber.

    摘要翻译： 一种等离子体产生装置包括：用于传输微波的矩形波导，其中所述等离子体产生装置的宽度在所述微波的电场方向上减小; 等离子体产生室，其中通过在气体中吸收由矩形波导传输的微波能量而产生等离子体，并且等离子体产生室的一部分具有沿着与微波传播方向垂直的平面截取的矩形截面。 提供具有与微波传播方向相同轴向的磁场产生装置，并向等离子体产生室施加具有电子回旋共振强度的磁场。 磁场产生装置设置在微波电场方向外的至少一个位置处，并且在矩形波导和等离子体发生室之间设置介质窗，以实现等离子体发生室的真空密封。

    Semiconductor substrate cleaning method and semiconductor device fabrication method
    4.
    发明授权
    Semiconductor substrate cleaning method and semiconductor device fabrication method 失效
    半导体衬底清洗方法和半导体器件制造方法

    公开(公告)号：US5795494A

    公开(公告)日：1998-08-18

    申请号：US513748

    申请日：1995-08-10

    申请人： Yuka Hayami ,  Miki T. Suzuki ,  Hiroki Ogawa ,  Shuzo Fujimura ,  Haruhisa Mori ,  Yoshiko Okui

    发明人： Yuka Hayami ,  Miki T. Suzuki ,  Hiroki Ogawa ,  Shuzo Fujimura ,  Haruhisa Mori ,  Yoshiko Okui

    IPC分类号： H01L21/304 ,  B08B3/10 ,  H01L21/306 ,  H01L21/02

    CPC分类号： H01L21/02052 ,  B08B3/10

    摘要： Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.

    摘要翻译： 将半导体衬底浸入具有降低的溶解氧浓度的纯水中，并在保持溶解氧浓度在纯水中的气氛中加热到高于60℃的温度，以便蚀刻半导体衬底的表面上的氧化膜 用于清洁半导体衬底的表面。 根据本发明，在不添加任何化学处理步骤的情况下，可以有效地除去污染物和残留的化学物质。 清洁可以在不增加化学品数量的情况下是有效的，并且可以获得改善的清洗步骤的生产量。

    Disk exchangeable target mechanism with effective cooling means, for ion implantation system
    6.
    发明授权
    Disk exchangeable target mechanism with effective cooling means, for ion implantation system 失效
    具有有效冷却手段的磁盘可更换目标机构，用于离子注入系统

    公开(公告)号：US4806769A

    公开(公告)日：1989-02-21

    申请号：US51397

    申请日：1987-05-19

    申请人： Haruhisa Mori ,  Motoo Nakano

    发明人： Haruhisa Mori ,  Motoo Nakano

    IPC分类号： H01L21/265 ,  H01J37/317 ,  G21K5/08

    CPC分类号： H01J37/3171

    摘要： An improved disk exchangeable target mechanism for an ion implantation system includes an effective cooling means for preventing thermal damage to a resist and for improving an implantation quality of semiconductor wafers. The target mechanism includes a metal disk on which a semiconductor wafer(s) to be ion-implanted are mounted on a first face thereof, a support including a metal base having the target disk mounted thereon, and a shaft incorporated with the base, and a medium, provided between a second face of the target disk opposite to the first face and the base, for thermally contact therebetween. Preferably, the base of the support is provided with a cavity and the shaft is provided with holes communicating with the cavity, whereby a cooling medium is inserted into the cavity through one hole and is drained from the cavity through another hole. Furthermore, preferably, the target disk is provided with a thermal transportation unit, such as heat pipes, for transporting thermal energy from a portion(s) at which a high temperature is caused by ion implantation energy, to another portion(s) at which the temperature is low.

    摘要翻译： 用于离子注入系统的改进的盘可更换靶机构包括有效的冷却装置，用于防止对抗蚀剂的热损伤并改善半导体晶片的植入质量。 目标机构包括在其第一面上安装有被离子注入的半导体晶片的金属盘，包括安装有目标盘的金属基座的支撑体和与基座结合的轴，以及 介质，设置在与第一面相对的目标盘的第二面与基座之间，用于与它们之间的热接触。 优选地，支撑件的基部设置有空腔，并且轴设置有与空腔连通的孔，由此冷却介质通过一个孔插入空腔中，并且通过另一个孔从空腔排出。 此外，优选地，目标盘设置有热传递单元，例如热管，用于将热能从由离子注入能量引起高温的部分传送到另一部分，其中 温度低。

    Laser treating implanted semiconductor surface through photo-resist layer
    7.
    发明授权
    Laser treating implanted semiconductor surface through photo-resist layer 失效
    通过光刻胶层激光处理植入的半导体表面

    公开(公告)号：US4500365A

    公开(公告)日：1985-02-19

    申请号：US467188

    申请日：1983-02-16

    申请人： Haruhisa Mori

    发明人： Haruhisa Mori

    IPC分类号： H01L21/265 ,  H01L21/268 ,  H01L21/324 ,  H01L21/263

    CPC分类号： H01L21/268 ,  H01L21/324

    摘要： A method of manufacturing a semiconductor device wherein a surface region of a semiconductor substrate is selectively heated by irradiation of a laser beam of a wavelength .lambda.. The method includes the steps of opening a window through an insulating layer formed on the surface of the semiconductor substrate, coating on the entire surface of the substrate a light transmitting film having an index n of refraction in such a manner that the thickness of the film over the exposed window part is equal, or substantially equal, to the value of .lambda./4n or .lambda./4n times an odd number, and then carrying out the irradiation of the laser beam. A photo-resist, thermally grown silicon dioxide film, silicon dioxide film by chemical vapor deposition, CVD phosphosilicate glass, or a glass film formed by coating hydroxide of silicon or its high molecule polymer is employed as the light transmitting film.

    摘要翻译： 一种制造半导体器件的方法，其中半导体衬底的表面区域通过辐射波长λ的激光束被选择性地加热。 该方法包括以下步骤：通过形成在半导体衬底的表面上的绝缘层打开窗口，在衬底的整个表面上涂覆具有折射率n的折射率的透光膜，使得膜的厚度 暴露的窗口部分与λ/ 4n或λ/ 4n的奇数值相等或基本相等，然后执行激光束的照射。 光致抗蚀剂，热生长二氧化硅膜，通过化学气相沉积的二氧化硅膜，CVD磷硅玻璃或通过涂覆硅或其高分子聚合物的氢氧化物形成的玻璃膜被用作透光膜。

    Ion implantation equipment
    8.
    发明授权
    Ion implantation equipment 失效
    离子注入设备

    公开(公告)号：US4410801A

    公开(公告)日：1983-10-18

    申请号：US217758

    申请日：1980-12-18

    申请人： Junji Sakurai ,  Haruhisa Mori

    发明人： Junji Sakurai ,  Haruhisa Mori

    IPC分类号： C30B31/22 ,  H01J37/317 ,  H01L21/265

    CPC分类号： H01J37/3171

    摘要： An equipment for implanting impurity material ions into a semiconductor wafer which supplies acceleration voltage and which continuously and automatically changes the acceleration voltage within a predetermined range for the purpose of producing impurity layers having a uniform concentration distribution in the direction of the depth of wafer. The equipment is effective in making fine patterns of integrated circuits. In one embodiment, the equipment changes the acceleration voltage continuously so that the frequency of the acceleration voltage is high enough to form a pillar shaped impurity layer at positions in a wafer while the ion beam is irradiated onto the positions respectively thereby to form an impurity layer having a uniform impurity distribution profile. In another embodiment of the invention, the equipment changes the acceleration voltage continuously but slow enough with respect to the scan frequency so that the ions are implanted to reach a certain depth in the first scan, another depth in the second scan and so on.

    摘要翻译： 用于将杂质材料离子注入到提供加速电压的半导体晶片中的设备，其连续地并且自动地将加速电压改变到预定范围内，以便产生在晶片深度方向上具有均匀浓度分布的杂质层。 该设备有效地制作精密的集成电路图案。 在一个实施例中，设备连续地改变加速电压，使得加速电压的频率足够高以在晶片的位置处形成柱状杂质层，同时将离子束照射到这些位置上，从而形成杂质层 具有均匀的杂质分布特征。 在本发明的另一个实施例中，设备连续地改变加速电压，但相对于扫描频率足够慢，使得离子被植入以在第一次扫描中达到一定深度，在第二次扫描中达到另一深度等等。