Substrate Holder for Graphene Film Synthesis
    11.
    发明申请
    Substrate Holder for Graphene Film Synthesis 审中-公开
    石墨烯薄膜合成基板支架

    公开(公告)号:US20130089666A1

    公开(公告)日:2013-04-11

    申请号:US13269037

    申请日:2011-10-07

    IPC分类号: C23C16/26 B05C13/02

    摘要: An apparatus and method for graphene film synthesis. The apparatus includes a quasi enclosed substrate holder which includes one open side, a cap disposed over the one open side of the quasi enclosed substrate holder, and a substrate for graphene film synthesis located inside the quasi enclosed substrate holder. The method includes placing a substrate for graphene film synthesis inside of a quasi enclosed substrate holder and generating a graphene film on the substrate via chemical vapor deposition, wherein the quasi enclosed substrate holder includes one open side and a cap disposed over the open side of the quasi enclosed substrate holder.

    摘要翻译: 一种用于石墨烯薄膜合成的设备和方法。 该装置包括准封闭的衬底保持器,其包括一个开口侧,设置在准封装衬底保持器的一个开放侧上的盖以及位于准封装衬底保持器内部的用于石墨烯膜合成的衬底。 该方法包括将准备封装的基板保持器内的石墨烯膜合成基板放置在化学气相沉积的基板上,并通过化学气相沉积在基板上产生石​​墨烯膜,其中准封闭的基板保持器包括一个敞开的侧面和设置在 准封闭衬底支架。

    GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION
    12.
    发明申请
    GRAPHENE SYNTHESIS BY CHEMICAL VAPOR DEPOSITION 有权
    石墨合成化学蒸气沉积

    公开(公告)号:US20110091647A1

    公开(公告)日:2011-04-21

    申请号:US12774342

    申请日:2010-05-05

    IPC分类号: C23C16/44 C23C16/26

    摘要: Processes for synthesizing graphene films. Graphene films may be synthesized by heating a metal or a dielectric on a substrate to a temperature between 400° C. and 1,400° C. The metal or dielectric is exposed to an organic compound thereby growing graphene from the organic compound on the metal or dielectric. The metal or dielectric is later cooled to room temperature. As a result of the above process, standalone graphene films may be synthesized with properties equivalent to exfoliated graphene from natural graphite that is scalable to size far greater than that available on silicon carbide, single crystal silicon substrates or from natural graphite.

    摘要翻译: 合成石墨烯薄膜的方法。 石墨烯膜可以通过将基板上的金属或电介质加热到400℃和1400℃之间的温度来合成。将金属或电介质暴露于有机化合物,从而从金属或电介质上的有机化合物生长石墨烯 。 然后将金属或电介质冷却至室温。 作为上述方法的结果,独立的石墨烯膜可以合成具有相当于天然石墨剥离的石墨烯的性质,该石墨烯的尺寸远大于在碳化硅,单晶硅衬底或天然石墨上可获得的尺寸。

    PROTECTIVE CARBON COATINGS
    13.
    发明申请
    PROTECTIVE CARBON COATINGS 审中-公开
    保护性碳涂料

    公开(公告)号:US20100203340A1

    公开(公告)日:2010-08-12

    申请号:US12702821

    申请日:2010-02-09

    IPC分类号: B32B15/04 B05D5/00 C23C8/64

    摘要: Disclosed is a method for forming a protective coating comprising contacting a carbon material with a metal surface, heating the carbon material and metal to allow at least a portion of the carbon material to dissolve in the metal, diffuse across a portion of the metal surface, or a combination thereof, and then cooling the metal and carbon material to form a metal having a protecting carbon coating disposed on a surface thereof, wherein the protective coating comprises graphene, multi-layer graphene, or a combination thereof. Also disclosed are a method for inhibiting corrosion comprising forming a layer of graphene on at least a portion of a metal surface; a metal having a surface, wherein at least a portion of the surface comprises a protective carbon coating comprising graphene, multi-layer graphene, or a combination thereof; and a passivation coating comprising a graphene, multi-layer graphene, or a combination thereof.

    摘要翻译: 公开了一种形成保护涂层的方法,包括使碳材料与金属表面接触,加热碳材料和金属以允许至少一部分碳材料溶解在金属中,扩散穿过金属表面的一部分, 或其组合,然后冷却金属和碳材料以形成具有设置在其表面上的保护碳涂层的金属,其中保护涂层包括石墨烯,多层石墨烯或其组合。 还公开了一种用于抑制腐蚀的方法,包括在金属表面的至少一部分上形成石墨烯层; 具有表面的金属,其中所述表面的至少一部分包括包含石墨烯,多层石墨烯或其组合的保护性碳涂层; 以及包括石墨烯,多层石墨烯或其组合的钝化涂层。

    Electrochemical etching apparatus
    14.
    发明授权
    Electrochemical etching apparatus 有权
    电化学蚀刻装置

    公开(公告)号:US09062389B2

    公开(公告)日:2015-06-23

    申请号:US13618564

    申请日:2012-09-14

    摘要: An electroplating etching apparatus includes a power supply to output current, and a container configured to contain an electrolyte. A cathode is coupled to the container and configured to fluidly communicate with the electrolyte. An anode is electrically connected to the output, and includes a graphene layer. A metal substrate layer is formed on the graphene layer, and is etched from the graphene layer in response to the current flowing through the anode.

    摘要翻译: 电镀蚀刻装置包括用于输出电流的电源和构造成容纳电解质的容器。 阴极耦合到容器并且构造成与电解液流体连通。 阳极电连接到输出端,并且包括石墨烯层。 在石墨烯层上形成金属基底层,并响应于流过阳极的电流从石墨烯层中蚀刻出金属基底层。

    MONOCLONAL ANTIBODY AGAINST DUCK TEMBUSU VIRUS, HYBRIDOMA CELL LINE AND APPLICATION THEREOF
    15.
    发明申请
    MONOCLONAL ANTIBODY AGAINST DUCK TEMBUSU VIRUS, HYBRIDOMA CELL LINE AND APPLICATION THEREOF 有权
    单克隆抗体对杜邦TEMBUSU病毒,杂交细胞系及其应用

    公开(公告)号:US20150086973A1

    公开(公告)日:2015-03-26

    申请号:US14378016

    申请日:2012-05-16

    申请人: Zejun Li Xuesong Li

    发明人: Zejun Li Xuesong Li

    IPC分类号: G01N33/569 C07K16/10

    摘要: A monoclonal antibody against the Duck Tembusu virus and a hybridoma cell line secreting the monoclonal antibody, a reagent kit and method for detecting a Duck Tembusu virus antibody, and application of the monoclonal antibody in preparing products for diagnosing the Duck Tembusu virus disease. The monoclonal antibody may bind specifically to E protein of Duck Tembusu virus and has an activity of neutralizing Duck Tembusu virus.

    摘要翻译: 针对鸭Tembusu病毒的单克隆抗体和分泌单克隆抗体的杂交瘤细胞系,用于检测鸭Tembusu病毒抗体的试剂盒和方法,以及单克隆抗体在制备用于诊断鸭Tembusu病毒病的产品中的应用。 单克隆抗体可能特异性结合鸭Tembusu病毒的E蛋白,并具有中和鸭Tembusu病毒的活性。

    MODIFIED BUBBLING TRANSFER METHOD FOR GRAPHENE DELAMINATION
    16.
    发明申请
    MODIFIED BUBBLING TRANSFER METHOD FOR GRAPHENE DELAMINATION 审中-公开
    用于石墨分层的改进的泡沫转移方法

    公开(公告)号:US20140238873A1

    公开(公告)日:2014-08-28

    申请号:US13778157

    申请日:2013-02-27

    IPC分类号: C25F3/02

    CPC分类号: C25B1/00 C01B32/194 C25F5/00

    摘要: In the BB transfer, or so called electrochemical delamination process, a transfer film is firstly spray-coated on a stack formed by two graphene sandwiching a metal (Cu or Cr) foil as a protection layer. Then, direct current (dc) voltage is applied to the first stack as a cathode and an anode (from be a platinum wire, a carbon rod, or others) in an electrolyte aqueous solution. With application of the electrolysis potential, hydrogen bubbles appear at the graphene/metal foil interfaces, while oxygen bubble appear at the anode due to the reduction of water. These H2 bubbles provide a gentle but persistent force to detach the graphene film from the copper foil at its edges, and the process is aided by the permeation of the electrolyte solution into the interlayers as the edges delaminate.

    摘要翻译: 在BB转移中,或称为电化学分层过程中,转移膜首先被喷涂在由两个石墨烯形成的叠层上,该两个石墨烯夹着金属(Cu或Cr)箔作为保护层。 然后,在电解质水溶液中,直流(dc)电压作为阴极和阳极(来自铂丝,碳棒等)施加到第一叠层。 随着电解电位的应用,石墨烯/金属箔界面出现氢气泡,同时由于水的还原,氧气在阳极出现。 这些H2气泡提供温和但持久的力,以将石墨烯膜从铜箔的边缘分离出来,并且当边缘分层时,电解质溶液渗透到夹层中有助于该过程。

    Method for synthesizing a thin film
    17.
    发明授权
    Method for synthesizing a thin film 有权
    合成薄膜的方法

    公开(公告)号:US08728575B2

    公开(公告)日:2014-05-20

    申请号:US13475167

    申请日:2012-05-18

    IPC分类号: C23C16/26 C23C16/34

    摘要: A method for synthesizing a thin film, the method containing the steps of: (a) providing a substrate support assembly containing at least two selectively interdigitable substrate support fixtures; (b) loading a substrate for thin film synthesis onto said at least two fixtures; (c) interdigitating said at least two fixtures; (d) positioning said at least two fixtures in a reaction chamber and forming a thin film on a surface of the substrate; and (e) unloading the substrate from said at least two fixtures.

    摘要翻译: 一种用于合成薄膜的方法,所述方法包括以下步骤:(a)提供包含至少两个选择性相互交叉的衬底支撑固定装置的衬底支撑组件; (b)将用于薄膜合成的基底装载到所述至少两个固定装置上; (c)交错所述至少两个固定装置; (d)将所述至少两个固定装置定位在反应室中并在所述基板的表面上形成薄膜; 和(e)从所述至少两个固定装置卸载基板。

    ELECTROCHEMICAL ETCHING APPARATUS
    18.
    发明申请
    ELECTROCHEMICAL ETCHING APPARATUS 有权
    电化学蚀刻装置

    公开(公告)号:US20140076721A1

    公开(公告)日:2014-03-20

    申请号:US13617727

    申请日:2012-09-14

    IPC分类号: C25F7/00

    摘要: An electroplating etching apparatus includes a power to output current, and a container configured to contain an electrolyte. A cathode is coupled to the container and configured to fluidly communicate with the electrolyte. An anode is electrically connected to the output, and includes a graphene layer. A metal substrate layer is formed on the graphene layer, and is etched from the graphene layer in response to the current flowing through the anode.

    摘要翻译: 电镀蚀刻装置包括输出电流的电力,以及容纳电解质的容器。 阴极耦合到容器并且构造成与电解液流体连通。 阳极电连接到输出端,并且包括石墨烯层。 在石墨烯层上形成金属基底层,并响应于流过阳极的电流从石墨烯层中蚀刻出金属基底层。

    Methods and Apparatus for the Synthesis of Large Area Thin Films
    19.
    发明申请
    Methods and Apparatus for the Synthesis of Large Area Thin Films 审中-公开
    用于合成大面积薄膜的方法和装置

    公开(公告)号:US20130337170A1

    公开(公告)日:2013-12-19

    申请号:US13526598

    申请日:2012-06-19

    申请人: Xuesong Li

    发明人: Xuesong Li

    IPC分类号: C23C16/458

    CPC分类号: C23C16/458 C23C16/545

    摘要: The invention provides methods and apparatus for supporting a substrate in a chemical vapor deposition reactor, and methods and apparatus for synthesizing large area thin films. The invention provides a method to coil the substrate into a cylindrical shape with a buffer layer embedded so as to achieve a many-fold increase in the effective width of the substrate. The buffer layer may also provide precursors or reactants for the deposition of the thin film.

    摘要翻译: 本发明提供了用于在化学气相沉积反应器中支撑衬底的方法和装置,以及用于合成大面积薄膜的方法和装置。 本发明提供了一种将衬底线圈化为具有嵌入缓冲层的圆柱形形状的方法,以便实现衬底有效宽度的多倍增加。 缓冲层还可以提供用于沉积薄膜的前体或反应物。

    Tube Reactor for Chemical Vapor Deposition
    20.
    发明申请
    Tube Reactor for Chemical Vapor Deposition 审中-公开
    用于化学气相沉积的管式反应器

    公开(公告)号:US20130280427A1

    公开(公告)日:2013-10-24

    申请号:US13454113

    申请日:2012-04-24

    IPC分类号: C23C16/455

    CPC分类号: C23C16/455 C23C16/52

    摘要: An apparatus for performing film deposition, comprises an energy source, a plurality of process tubes, and a gas manifold. The energy source is adapted to direct energy into a cylindrical space. The plurality of process tubes, in turn, pass through this cylindrical space. To perform the film deposition, the gas manifold is operative to introduce a respective gas flow into each of the plurality of process tubes.

    摘要翻译: 一种用于进行膜沉积的设备,包括能量源,多个处理管和气体歧管。 能量源适于将能量引导到圆柱形空间中。 多个处理管又通过该圆柱形空间。 为了执行膜沉积,气体歧管可操作以将相应的气流引入到多个处理管中的每一个中。