公开(公告)号：US20230085364A1

公开(公告)日：2023-03-16

申请号：US17651606

申请日：2022-02-18

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroki NEMOTO ,  Yusuke KOBAYASHI ,  Tomoaki INOKUCHI ,  Hiro GANGI ,  Tatsuo SHIMIZU

IPC: H01L29/66 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type including a first portion and a second portion, a second semiconductor layer of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the second conductivity type, a gate electrode located between the second semiconductor region and the fourth semiconductor region and between the third semiconductor region and the fourth semiconductor region in a second direction, a first insulating region, a third electrode, and a second insulating region.

公开(公告)号：US20230078447A1

公开(公告)日：2023-03-16

申请号：US17651645

申请日：2022-02-18

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiroki NEMOTO ,  Yusuke KOBAYASHI ,  Tomoaki INOKUCHI ,  Hiro GANGI ,  Tatsuo SHIMIZU

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/66 ,  H01L29/423

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of a first conductivity type, a fourth semiconductor region of a second conductivity type, a third electrode connected to the second electrode and the fourth semiconductor region, a first insulating region, a gate electrode, and a second insulating region.

公开(公告)号：US20220029012A1

公开(公告)日：2022-01-27

申请号：US17188974

申请日：2021-03-01

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tomoaki INOKUCHI ,  Hiro GANGI ,  Yusuke KOBAYASHI ,  Ryosuke IIJIMA

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L21/765 ,  H01L29/66

Abstract: According to one embodiment, a semiconductor device includes a supporter including a first surface, first, second, and third conductive parts, a semiconductor region, and an insulating part. A first direction from the first toward second conductive part is along the first surface. The semiconductor region includes first, second, and third partial regions. A second direction from the first toward second partial region is along the first surface and crosses the first direction. The third partial region is between the first partial region and the second conductive part in the first direction. The third partial region includes a counter surface facing the second conductive part. A direction from the counter surface toward the third conductive part is along the second direction. The insulating part includes an insulating region. At least a portion of the insulating region is between the counter surface and the third conductive part.

公开(公告)号：US20210183995A1

公开(公告)日：2021-06-17

申请号：US17186881

申请日：2021-02-26

Applicant: FUJI ELECTRIC CO., LTD. ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  KABUSHIKI KAISHA TOSHIBA

Inventor： Yusuke KOBAYASHI ,  Manabu TAKEI ,  Shinya KYOGOKU ,  Shinsuke HARADA

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L29/78

Abstract: A superjunction silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a parallel pn structure in which epitaxially grown first column regions of the first conductivity type and ion-implanted second column regions of a second conductivity type are disposed to repeatedly alternate with one another, a second semiconductor layer of the second conductivity type, first semiconductor regions of the first conductivity type, trenches, gate electrodes provided in the trenches via gate insulating films, another electrode, and a third semiconductor layer of the first conductivity type. The first column regions have an impurity concentration in a range from 1.1×1016/cm3 to 5.0×1016/cm3.

公开(公告)号：US20250098289A1

公开(公告)日：2025-03-20

申请号：US18589752

申请日：2024-02-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yusuke KOBAYASHI ,  Tomoaki INOKUCHI ,  Tatsunori SAKANO ,  Satoshi YOSHIDA ,  Kento ADACHI ,  Hiro GANGI ,  Shotaro BABA ,  Taichi FUKUDA

IPC: H01L27/06 ,  H01L23/00 ,  H01L29/40 ,  H01L29/78

Abstract: An embodiment includes a transistor section, a gate electrode pad, a gate connection member, a gate circuit section, and a casing. The transistor section includes a drain electrode, a source electrode and a gate electrode. The transistor section and the gate electrode pad are provided on a semiconductor substrate. The gate connection member connects a gate terminal and the gate electrode pad. The gate circuit section connects the gate electrode pad and the gate electrode, and includes a parallel circuit with a capacitor and a resistive element, a first connection member electrically connecting the capacitor to the gate electrode pad and a second connection member electrically connecting the capacitor to the gate electrode. The casing accommodates the transistor section, the gate electrode pad and the gate circuit section.

公开(公告)号：US20250098183A1

公开(公告)日：2025-03-20

申请号：US18589769

申请日：2024-02-28

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Tomoaki INOKUCHI ,  Hiro GANGI ,  Yusuke KOBAYASHI ,  Shotaro BABA ,  Hiroki NEMOTO ,  Taichi FUKUDA ,  Tatsunori SAKANO

IPC: H10B99/00 ,  H01L29/40 ,  H01L29/78 ,  H01L29/94

Abstract: A semiconductor device includes a major element including a first semiconductor region, a first electrode, a second electrode, a first gate electrode, and a first insulating member being positioned between the first gate electrode and the first semiconductor region, and a recording element electrically connected with the first electrode. The recording element records, as analog data, a maximum value of a change amount dV/dt of a voltage of the first electrode over time.

公开(公告)号：US20250048708A1

公开(公告)日：2025-02-06

申请号：US18586688

申请日：2024-02-26

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Taichi FUKUDA ,  Yusuke KOBAYASHI ,  Shotaro BABA ,  Hiro GANGI ,  Hiroki NEMOTO ,  Tomoaki INOKUCHI

IPC: H01L29/40 ,  H01L29/78

Abstract: An insulating member includes a fixed charge. The insulating member includes a first insulating part. The first insulating part includes a first region, a second region, and a third region. The first region is positioned between a gate electrode and the second region in a first direction. The second region is positioned between the first region and the third region in the first direction. The third region is positioned between the second region and a second surface in the first direction. A density of the fixed charge is greater in the first region than in the second region.

公开(公告)号：US20230078116A1

公开(公告)日：2023-03-16

申请号：US17653682

申请日：2022-03-07

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yusuke KOBAYASHI ,  Tomoaki INOKUCHI ,  Hiro GANGI ,  Tatsunori SAKANO ,  Yusuke HAYASHI

IPC: H01L29/78 ,  H01L29/40 ,  H03K17/56

Abstract: A semiconductor device of an embodiment includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench on a side of a first face; a first electrode on the side of the first face; a second electrode on the side of the second face; a first gate electrode in the first trench; a first field plate electrode electrically connected to the first electrode in the first trench, a second gate electrode in the second trench; and a second field plate electrode electrically connected to the first electrode in the second trench, a resistance between first electrode and second field plate is different from a resistance between first electrode and the first field plate electrode.

公开(公告)号：US20220384587A1

公开(公告)日：2022-12-01

申请号：US17666860

申请日：2022-02-08

Applicant: Kabushiki Kaisha Toshiba

Inventor： Hiro GANGI ,  Yasunori TAGUCHI ,  Tomoaki INOKUCHI ,  Yusuke KOBAYASHI ,  Hiroki NEMOTO

IPC: H01L29/40 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device includes a first electrode, a second electrode, a semiconductor layer that includes a first semiconductor region, a second semiconductor region, and a third semiconductor region, a third electrode, a first insulating region, a second insulating region, a fourth electrode that has a plurality of portions consecutive in a first direction, the plurality of portions including a first portion that has a first width in a second direction, a second portion that is located closer to the second electrode than the first portion in the first direction and has a second width smaller than the first width in the second direction, and a third portion that is adjacent to the second portion, located closer to the second electrode than the second portion in the first direction, and has a third width larger than the second width in the second direction, and a third insulating region.

公开(公告)号：US20220115533A1

公开(公告)日：2022-04-14

申请号：US17394765

申请日：2021-08-05

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiro GANGI ,  Tomoaki INOKUCHI ,  Yusuke KOBAYASHI ,  Hiroki NEMOTO

IPC: H01L29/78 ,  H01L27/088

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a conductive member, a semiconductor member, and an insulating member. The second electrode includes a conductive portion. The conductive portion is between the third electrode and the conductive member. The conductive member is electrically connected with the second electrode. The semiconductor member includes first to third semiconductor regions. The second semiconductor region is between the third semiconductor region and a portion of the first semiconductor region. The second semiconductor region is between the third electrode and the conductive member. The conductive portion is electrically connected with the second and third semiconductor regions. The first electrode is electrically connected with the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member.