公开(公告)号：US20200049574A1

公开(公告)日：2020-02-13

申请号：US16281180

申请日：2019-02-21

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yoshihiko FUJI ,  Yoshihiro HIGASHI ,  Michiko HARA ,  Kazuaki OKAMOTO ,  Shotaro BABA

IPC: G01L1/12 ,  H01L41/12 ,  H01F1/00

Abstract: According to one embodiment, a sensor includes a film portion, one or more detectors fixed to the film portion, and a processor. The detector includes first and second detecting elements. The first detecting element includes a first magnetic layer. The second detecting element includes a second magnetic layer. A first change rate of a first signal is higher than a second change rate of the first signal. The first signal corresponds to a first electrical resistance of the first detecting element. A change rate of a second signal with respect to the change of the magnitude of the strain is higher than the second change rate. The second signal corresponds to a second electrical resistance of the second detecting element. The processor is configured to perform at least a first operation of outputting a second value. The second value is based on the second signal and a first value.

公开(公告)号：US20190272934A1

公开(公告)日：2019-09-05

申请号：US16119008

申请日：2018-08-31

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kazuaki OKAMOTO ,  Yoshihiko FUJI ,  Shiori KAJI ,  Yoshihiro HIGASHI ,  Tomohiko NAGATA ,  Shotaro BABA ,  Michiko HARA

IPC: H01F10/32 ,  H01L43/02 ,  H01L43/10 ,  G01L9/00 ,  A61B5/021

Abstract: According to one embodiment, a sensor includes a deformable film portion, and a first sensing element provided at the film portion. The first sensing element includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and second magnetic layers. The first intermediate layer is nonmagnetic. The first magnetic layer includes a first film including Fe and Co, a second film including Fe and Co, a third film, and a fourth film. The third film includes at least one selected from the group consisting of Cu, Au, Ru, Ag, Pt, Pd, Ir, Rh, Re, and Os and is provided between the first and second films. The fourth film includes at least one selected from the group consisting of Mg, Ca, Sc, Ti, Sr, Y, Zr, Nb, Mo, Ba, La, Hf, Ta, and W and is provided between the third and second films.

公开(公告)号：US20240079459A1

公开(公告)日：2024-03-07

申请号：US18168956

申请日：2023-02-14

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yusuke KOBAYASHI ,  Tomoaki INOKUCHI ,  Hiro GANGI ,  Shotaro BABA

IPC: H01L29/40 ,  H01L29/04 ,  H01L29/10 ,  H01L29/423

CPC classification number: H01L29/402 ,  H01L29/045 ,  H01L29/1095 ,  H01L29/42364

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode; a fourth electrode, a semiconductor member, a first conductive member, a second conductive member, and an insulating member. The semiconductor member includes first, second and third semiconductor regions. The first semiconductor region includes a first outer edge region, a first partial region, a second partial region, a third partial region, and a fourth partial region. The first, third and fourth partial regions are of a first conductivity type. The second semiconductor region is of a second conductivity type. The third semiconductor region is of the first conductivity type. The second conductive member includes a first conductive portion. The insulating member includes a first insulating region and a second insulating region. An electrical resistivity of the second partial region is higher than an electrical resistivity of the first partial region.

公开(公告)号：US20220190154A1

公开(公告)日：2022-06-16

申请号：US17395070

申请日：2021-08-05

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Yusuke KOBAYASHI ,  Akihiro GORYU ,  Ryohei GEJO ,  Hiro GANGI ,  Tomoaki INOKUCHI ,  Shotaro BABA ,  Tatsuya NISHIWAKI ,  Tsuyoshi KACHI

IPC: H01L29/78 ,  H01L29/40

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a first conductive member, a semiconductor member, and a first insulating member. The third electrode includes a third electrode end portion and a third electrode other-end portion. The first conductive member includes a first conductive member end portion and a first conductive member other-end portion. The first conductive member is electrically connected with one of the second electrode or the third electrode. The semiconductor member includes first to fourth semiconductor regions. The first semiconductor region includes first and second partial regions. The third semiconductor region is electrically connected with the second electrode. The fourth semiconductor region is electrically connected with the first electrode. At least a portion of the first insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member.

公开(公告)号：US20250048708A1

公开(公告)日：2025-02-06

申请号：US18586688

申请日：2024-02-26

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Taichi FUKUDA ,  Yusuke KOBAYASHI ,  Shotaro BABA ,  Hiro GANGI ,  Hiroki NEMOTO ,  Tomoaki INOKUCHI

IPC: H01L29/40 ,  H01L29/78

Abstract: An insulating member includes a fixed charge. The insulating member includes a first insulating part. The first insulating part includes a first region, a second region, and a third region. The first region is positioned between a gate electrode and the second region in a first direction. The second region is positioned between the first region and the third region in the first direction. The third region is positioned between the second region and a second surface in the first direction. A density of the fixed charge is greater in the first region than in the second region.

公开(公告)号：US20230378340A1

公开(公告)日：2023-11-23

申请号：US18084445

申请日：2022-12-19

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Kenji KIKUCHI ,  Tsuyoshi KACHI ,  Shotaro BABA

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/7806 ,  H01L29/407 ,  H01L29/7813 ,  H01L29/66734

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions, and a gate electrode. The first semiconductor region is located on the first electrode. The second semiconductor region is located on the first semiconductor region, and includes a first contact region. The third semiconductor region is located on a portion of the second semiconductor region. The third semiconductor region includes a second contact region. A concentration of a first element in the second contact region is less than a concentration of the first element in the first contact region. The first element is at least one selected from the group consisting of platinum group elements and gold. The gate electrode faces the second semiconductor region via a gate insulating layer. The second electrode is located on the second and third semiconductor regions and contacts the first and second contact regions.

公开(公告)号：US20180231621A1

公开(公告)日：2018-08-16

申请号：US15705579

申请日：2017-09-15

Applicant: Kabushiki Kaisha Toshiba

Inventor： Yoshihiro HIGASHI ,  Michiko HARA ,  Tomohiko NAGATA ,  Shiori KAJI ,  Yoshihiko FUJI ,  Akiko YUZAWA ,  Kenji OTSU ,  Kazuaki OKAMOTO ,  Shotaro BABA

IPC: G01R33/09

CPC classification number: G01R33/093

Abstract: According to one embodiment, a sensor includes a first film, a first sensor portion, a driving portion, and a processor. The first sensor portion is provided at the first film. The first sensor portion includes a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first film and the first magnetic layer. The first intermediate layer is provided between the first magnetic layer and the second magnetic layer. The driving portion causes the first film to deform at a first frequency. The processor outputs a third signal based on a first signal and a second signal. The first signal relates to the first frequency. The second signal is output from the first sensor portion.

公开(公告)号：US20240413241A1

公开(公告)日：2024-12-12

申请号：US18808342

申请日：2024-08-19

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

Inventor： Hiroaki KATOU ,  Saya SHIMOMURA ,  Shotaro BABA ,  Atsuro INADA ,  Hiroshi YOSHIDA ,  Yasuhiro KAWAI

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor part, first to third electrodes, and a control electrode. The first electrode is provided on a back surface of the semiconductor part. The second electrode is provided at a front surface side of the semiconductor part. The third electrode and the control electrode are provided inside a trench of the semiconductor part. The control electrode includes first and second control portions. The semiconductor device further includes first to third insulating films. The first insulating film is between the control electrode and the semiconductor part. The second insulating film covers the first and second control portions. The third insulating film is between the second electrode and the second insulating film. The third insulating film includes a portion extending between the first and second control portions. The third electrode is between the first electrode and the extension portion of the third insulating film.

公开(公告)号：US20230197810A1

公开(公告)日：2023-06-22

申请号：US17809777

申请日：2022-06-29

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor： Shotaro BABA ,  Hiro GANGI ,  Hiroaki KATOU ,  Saya SHIMOMURA ,  Shingo SATO

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/78 ,  H01L23/522

CPC classification number: H01L29/4236 ,  H01L21/28 ,  H01L29/7802 ,  H01L23/522 ,  H01L29/42372

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, a connecting member, a first member, and an insulating member. The semiconductor member includes first to third semiconductor regions. The first semiconductor region is between the first electrode and the third semiconductor region. The first semiconductor region includes first to third partial regions. The second semiconductor region is between the first and third semiconductor regions. The second semiconductor region includes third and fourth semiconductor portions. The third semiconductor region includes first and second semiconductor portions. The second electrode is electrically connected with the third semiconductor region. The third electrode includes a first electrode portion. The first conductive member includes first to third conductive regions. The connecting member is electrically connected with the first conductive member. The first member is provided between the first electrode portion and the connecting member.

公开(公告)号：US20200069199A1

公开(公告)日：2020-03-05

申请号：US16293689

申请日：2019-03-06

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kazuaki OKAMOTO ,  Yoshihiko FUJI ,  Yoshihiro HIGASHI ,  Shotaro BABA ,  Michiko HARA

IPC: A61B5/021 ,  G01L1/12 ,  H04R19/04 ,  G06F3/041 ,  B81B3/00

Abstract: According to one embodiment, a sensor includes a structure body including a deforming portion, and a first sensing element provided at the deforming portion. The first sensing element includes first to fourth magnetic layers and a first intermediate layer. The first magnetic layer is provided between the second and third magnetic layers. The fourth magnetic layer is provided between the first and third magnetic layers. The first intermediate layer is provided between the second and first magnetic layers. The third magnetic layer includes at least one of a first material or a second material. The first material includes at least one selected from the group consisting of Ir—Mn, Pt—Mn, Pd—Pt—Mn, and Ru—Rh—Mn. The second material includes at least one of CoPt, (CoxPt100-x)100-yCry, or FePt. A crystallinity of at least a portion of the fourth magnetic layer is higher than a crystallinity of the first magnetic layer.