中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.015 seconds)

    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220293754A1

    公开(公告)日：2022-09-15

    申请号：US17399278

    申请日：2021-08-11

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Tomoaki INOKUCHI ,  Hiro GANGI ,  Yusuke KOBAYASHI ,  Hiroki NEMOTO

    IPC: H01L29/423 ,  H01L29/47 ,  H01L29/78

    Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, and an insulating part region. The second electrode includes a first electrode portion. The semiconductor member includes a first semiconductor region. The first semiconductor region includes first to third partial regions. The first partial region is between the first electrode and the first electrode portion. The second partial region is between the first and third electrodes. The third partial region is between the first partial region and the first electrode portion. The third partial region includes first and second positions. The second position is between the first partial region and the first position. The first conductive member includes first and second portions. The first portion is between the second partial region and the third electrode. The insulating part region includes first and second insulating regions.

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220140133A1

    公开(公告)日：2022-05-05

    申请号：US17395910

    申请日：2021-08-06

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Hiro GANGI ,  Yasunori TAGUCHI ,  Tomoaki INOKUCHI ,  Yusuke KOBAYASHI ,  Hiroki NEMOTO

    IPC: H01L29/78 ,  H01L29/40

    Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a conductive member, and an insulating member. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The second semiconductor region is between the first partial region and the third semiconductor region. The conductive member is located between the second partial region and the third electrode. The conductive member includes a first end portion and a first other-end portion. The first end portion is between the first other-end portion and the third electrode. The conductive member includes first to third portions. The second portion is between the third portion and the third electrode. The first portion is between the second portion and the third electrode. The first portion includes the first end portion. The second portion contacts the first and third portions.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220384587A1

    公开(公告)日：2022-12-01

    申请号：US17666860

    申请日：2022-02-08

    Applicant: Kabushiki Kaisha Toshiba

    Inventor： Hiro GANGI ,  Yasunori TAGUCHI ,  Tomoaki INOKUCHI ,  Yusuke KOBAYASHI ,  Hiroki NEMOTO

    IPC: H01L29/40 ,  H01L29/423 ,  H01L29/78

    Abstract: A semiconductor device includes a first electrode, a second electrode, a semiconductor layer that includes a first semiconductor region, a second semiconductor region, and a third semiconductor region, a third electrode, a first insulating region, a second insulating region, a fourth electrode that has a plurality of portions consecutive in a first direction, the plurality of portions including a first portion that has a first width in a second direction, a second portion that is located closer to the second electrode than the first portion in the first direction and has a second width smaller than the first width in the second direction, and a third portion that is adjacent to the second portion, located closer to the second electrode than the second portion in the first direction, and has a third width larger than the second width in the second direction, and a third insulating region.

    SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220115533A1

    公开(公告)日：2022-04-14

    申请号：US17394765

    申请日：2021-08-05

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Hiro GANGI ,  Tomoaki INOKUCHI ,  Yusuke KOBAYASHI ,  Hiroki NEMOTO

    IPC: H01L29/78 ,  H01L27/088

    Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a conductive member, a semiconductor member, and an insulating member. The second electrode includes a conductive portion. The conductive portion is between the third electrode and the conductive member. The conductive member is electrically connected with the second electrode. The semiconductor member includes first to third semiconductor regions. The second semiconductor region is between the third semiconductor region and a portion of the first semiconductor region. The second semiconductor region is between the third electrode and the conductive member. The conductive portion is electrically connected with the second and third semiconductor regions. The first electrode is electrically connected with the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third electrode and between the semiconductor member and the first conductive member.

    SEMICONDUCTOR DEVICE
    8.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240274680A1

    公开(公告)日：2024-08-15

    申请号：US18456786

    申请日：2023-08-28

    Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    Inventor： Tomoaki INOKUCHI ,  Yusuke KOBAYASHI ,  Shotaro BABA ,  Hiroki NEMOTO ,  Taichi FUKUDA ,  Tatsuya NISHIWAKI ,  Tatsuo SHIMIZU

    IPC: H01L29/417 ,  H01L29/40 ,  H01L29/47

    CPC classification number: H01L29/41741 ,  H01L29/401 ,  H01L29/47

    Abstract: A semiconductor device includes first to third conductive portions, a first insulating portion, and a semiconductor portion. The semiconductor portion includes a first semiconductor region provided between the first conductive portion and the second conductive portion, and a second semiconductor region provided between the second conductive portion and the first insulating region. The second conductive portion includes a first conductive region in Schottky junction with the first semiconductor region, and a second conductive region in Schottky junction with the second semiconductor region. When the first conductivity-type is an n-type, a work function of the first conductive region is smaller than a work function of the second conductive region. When the first conductivity-type is a p-type, the work function of the first conductive region is larger than the work function of the second conductive region.

    SEMICONDUCTOR DEVICE
    9.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240030344A1

    公开(公告)日：2024-01-25

    申请号：US18171820

    申请日：2023-02-21

    Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

    Inventor： Tomoaki INOKUCHI ,  Hiro GANGI ,  Yusuke KOBAYASHI ,  Tatsuya NISHIWAKI ,  Shotaro BABA ,  Hiroki NEMOTO ,  Tatsunori SAKANO

    IPC: H01L29/78 ,  H01L29/423 ,  H01L29/47

    CPC classification number: H01L29/7839 ,  H01L29/42376 ,  H01L29/47

    Abstract: According to one embodiment, a semiconductor device includes a first element. The first element includes a first conductive member, a second conductive member, a first semiconductor member, a third conductive member, and a third conductive member wiring. The first conductive member includes a first conductive portion including a first face and a second conductive portion including a second face. The second conductive member includes a third conductive portion including a third face and a fourth conductive portion including a fourth face. The fourth conductive portion includes a facing conductive portion. The first semiconductor member is of a first conductive type. The first semiconductor member includes a first partial region, a second partial region and a third partial region. The third partial region includes a facing face facing the facing conductive portion. The third conductive member wiring is electrically connected to the third conductive member.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20220393008A1

    公开(公告)日：2022-12-08

    申请号：US17585790

    申请日：2022-01-27

    Applicant: KABUSHIKI KAISHA TOSHIBA

    Inventor： Yusuke KOBAYASHI ,  Tatsuo SHIMIZU ,  Tomoaki INOKUCHI ,  Hiro GANGI ,  Hiroki NEMOTO

    IPC: H01L29/417 ,  H01L29/66 ,  H01L29/40

    Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a first conductive member, a semiconductor member, and a first insulating member. The third electrode includes a third electrode end portion and a third electrode other end portion. The third electrode end portion is between the first electrode and the third electrode other end portion. The first conductive member includes a first conductive member end portion and a first conductive member other end portion. The first conductive member end portion is between the first electrode and the first conductive member other end portion. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The first insulating member includes silicon and oxygen. The first insulating member includes a first element including at least one selected from the group consisting of nitrogen, aluminum, hafnium and zirconium at the third position.

Patent Agency Ranking