公开(公告)号：US20150372169A1

公开(公告)日：2015-12-24

申请号：US14654453

申请日：2013-10-25

申请人： KANEKA CORPORATION

发明人： Toshihiko Uto ,  Daisuke Adachi

IPC分类号： H01L31/0224 ,  H01L31/0465 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/022433 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/0465 ,  H01L31/0747 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/50

摘要： A solar cell of the present invention includes a collecting electrode on one main surface of a photoelectric conversion section. The collecting electrode includes first and second electroconductive layers in this order from the photoelectric conversion section side, and an insulating layer between the first and second electroconductive layers, the insulating layer having an opening section formed therein. The first electroconductive layer is covered with the insulating layer, contains a low-melting-point material, and is conductively connected with a part of the second electroconductive layer via the opening section. The surface roughness of the second electroconductive layer is preferably 1.0 μm to 10.0 μm. The second electroconductive layer is preferably formed by a plating method. In order to conductively connect the first and second electroconductive layers, annealing of the first electroconductive layer by heating is preferably performed prior to forming the second electroconductive layer.

摘要翻译： 本发明的太阳能电池在光电转换部的一个主面上具有集电极。 收集电极从光电转换部分侧依次包括第一和第二导电层，以及在第一和第二导电层之间的绝缘层，其中形成有开口部分的绝缘层。 第一导电层被绝缘层覆盖，包含低熔点材料，并且经由开口部分与第二导电层的一部分导电连接。 第二导电层的表面粗糙度优选为1.0μm〜10.0μm。 第二导电层优选通过电镀法形成。 为了导电地连接第一和第二导电层，优选在形成第二导电层之前进行第一导电层的加热退火。

公开(公告)号：US10388821B2

公开(公告)日：2019-08-20

申请号：US15971744

申请日：2018-05-04

申请人： Kaneka Corporation

发明人： Daisuke Adachi ,  Toru Terashita ,  Toshihiko Uto

IPC分类号： H01L31/18 ,  H01L21/288 ,  H01L31/0224 ,  H01L31/0747 ,  H01L31/0236 ,  H01L31/20

摘要： A method for manufacturing a crystalline silicon-based solar cell includes forming a first intrinsic silicon-based thin-film on a first principal surface and a lateral surface of an n-type crystalline silicon substrate, forming a p-type silicon-based thin-film on the first intrinsic silicon-based thin-film, forming a first transparent electrode layer on an entire region of the first principal surface except for a peripheral portion, forming a second intrinsic silicon-based thin-film on a second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming an n-type silicon-based thin-film on the second intrinsic silicon-based thin-film, forming a second transparent electrode layer on an entire region of the second principal surface and the lateral surface of the n-type crystalline silicon substrate, forming a patterned collecting electrode on the first transparent electrode layer, and forming a plated metal electrode on the second transparent electrode layer by an electroplating method.

公开(公告)号：US10333012B2

公开(公告)日：2019-06-25

申请号：US15560596

申请日：2016-01-22

申请人： KANEKA CORPORATION

发明人： Toshihiko Uto ,  Takashi Suezaki ,  Wataru Yoshida

IPC分类号： H01L31/18 ,  H01L31/0236 ,  H01L31/0747

摘要： The method for manufacturing a crystalline silicon substrate for a solar cell includes: forming a texture on the surface of a single-crystalline silicon substrate by bringing an alkali solution and the surface of the single-crystalline silicon substrate into contact with each other; bringing an acidic solution and the surface of the single-crystalline silicon substrate into contact with each other to perform an acid treatment thereon; and then by bringing ozone water and the surface of the single-crystalline silicon substrate into contact with each other to perform an ozone treatment thereon. One aspect of embodiment is that the acidic solution used for the acid treatment is hydrochloric acid. Another aspect of embodiment is that the ozone treatment is performed by immersing the single-crystalline silicon substrate into the ozone water bath.

公开(公告)号：US20170200852A1

公开(公告)日：2017-07-13

申请号：US15473045

申请日：2017-03-29

申请人： KANEKA CORPORATION

发明人： Toshihiko Uto ,  Daisuke Adachi

IPC分类号： H01L31/18 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/0236

CPC分类号： H01L31/1804 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/0747 ,  H01L31/1868 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： A manufacturing method includes steps of forming a texture on a surface of a single-crystalline silicon substrate, cleaning the surface of the single-crystalline silicon substrate using ozone, depositing an intrinsic silicon-based layer on the texture on the single-crystalline silicon substrate, and depositing a conductive silicon-based layer on the intrinsic silicon-based layer, in this order. The single-crystalline silicon substrate before deposition of the intrinsic silicon-based layer has a texture size of less than 5 μm. A recess portion of the texture has a curvature radius of less than 5 nm. After deposition of at least a part of the intrinsic silicon-based layer and before deposition of the conductive silicon-based layer, the intrinsic silicon-based layer is subjected to a plasma treatment in an atmosphere of a gas mainly composed of hydrogen.