公开(公告)号：US20190250490A1

公开(公告)日：2019-08-15

申请号：US16267669

申请日：2019-02-05

Applicant: STANLEY ELECTRIC CO., LTD.

Inventor： Yusuke YOKOBAYASHI ,  Masaru KURAMOTO

IPC: G03B21/20 ,  G02B27/14

Abstract: A lighting apparatus includes a laser source configured to emit a laser beam, a homogenizer optical element that includes a light flux dividing section disposed to face the laser source, configured to divide the laser beam into a plurality of separate laser beams in a plane and make advancing directions of the plurality of separate laser beams different from each other, and a light flux superimposing section formed integrally with the light flux dividing section and superimposing the plurality of separate laser beams on each other in a common radiation region, and a fluorescent material disposed to face the homogenizer optical element, excited by the plurality of separate laser beams superimposed in the radiation region using the light flux superimposing section so as to emit fluorescence.

公开(公告)号：US20140110738A1

公开(公告)日：2014-04-24

申请号：US14062795

申请日：2013-10-24

Applicant: STANLEY ELECTRIC CO., LTD.

Inventor： Yusuke YOKOBAYASHI ,  Tatsuma SAITO

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/0095 ,  H01L33/145 ,  H01L33/20 ,  H01L33/44

Abstract: A light emitting element includes a semiconductor structure layer, a reflective electrode layer formed on a part of the semiconductor structure layer, a conductor layer formed on the semiconductor structure layer with the reflective electrode layer embedded therein, and a support substrate that is arranged on the conductor layer and joined to the conductor layer via a junction layer. A high resistance contact surface is provided at an interface between the semiconductor structure layer and the conductor layer. A high resistance portion is arranged in an area opposed via the conductor layer to an area where the high resistance contact surface is provided. The conductor layer is connected to the junction layer in a peripheral area of the conductor layer outside the high resistance portion.

Abstract translation: 发光元件包括半导体结构层，形成在半导体结构层的一部分上的反射电极层，形成在半导体结构层上并且反射电极层嵌入其中的导体层，以及支撑基板， 导体层，并经由接合层与导体层接合。 在半导体结构层和导体层之间的界面处提供高电阻接触表面。 高电阻部分布置在经由导体层相对的区域到设置有高电阻接触表面的区域。 导体层在高电阻部分外部的导体层的周边区域中连接到结层。

公开(公告)号：US20130100692A1

公开(公告)日：2013-04-25

申请号：US13653677

申请日：2012-10-17

Applicant: STANLEY ELECTRIC CO. , LTD.

Inventor： Yusuke YOKOBAYASHI

IPC: H01L33/50 ,  B60Q1/04

CPC classification number: H01L33/504 ,  F21S41/143 ,  F21S41/147 ,  H01L33/505 ,  H01L33/508

Abstract: A semiconductor light emitting device which produces mixed light of a desired emission color by a combination of a semiconductor light emitting element and a wavelength converting layer containing a fluorescent substance, and a vehicle lamp including the semiconductor light emitting device. The wavelength converting layer has different wavelength conversion characteristics respectively at its portion covering an area of relatively high current density at light emission operation of the semiconductor light emitting element and at its portion covering an area of relatively low current density so as to reduce chromaticity difference over the light extraction surface of the mixed light due to non-uniformity of current density in the light emitting layer at light emission operation.

Abstract translation: 一种半导体发光器件，其通过半导体发光元件和包含荧光物质的波长转换层的组合以及包括该半导体发光器件的车辆灯产生期望的发射颜色的混合光。 波长转换层在其半导体发光元件的发光操作的覆盖电流密度相对较高的区域的部分和覆盖相对较低电流密度的区域的部分具有不同的波长转换特性，从而降低色度差异 由于在发光操作中发光层中的电流密度不均匀而导致的混合光的光提取表面。