公开(公告)号：US4746549A

公开(公告)日：1988-05-24

申请号：US3550

申请日：1987-01-15

申请人： Hitoshi Ito ,  Takahiko Moriya

发明人： Hitoshi Ito ,  Takahiko Moriya

IPC分类号： C23C16/04 ,  C23C16/08 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/28562 ,  C23C16/04 ,  C23C16/08 ,  H01L21/76879

摘要： In a method for forming a thin film of a refractory metal on a substrate having a silicon layer and an insulating layer on a surface thereof, a halogen compound of the refractory metal is mixed with hydrogen gas for providing a material gas, hydrogen halide gas or a halogen gas consisting of a second halogen less electronegative than the first halogen forming the halogen compound of the refractory metal is added to the material gas, and by use of the thus obtained mixed gas, vapor phase deposition refractory metal is effected selectively on the surface of the silicon layer of the substrate.

摘要翻译： 在其表面具有硅层和绝缘层的基板上形成难熔金属薄膜的方法中，难熔金属的卤素化合物与用于提供原料气体的氢气，卤化氢气体或 将由形成难熔金属的卤素化合物的第一卤素的第二卤素组成的卤素气体加入到原料气体中，并且通过使用由此获得的混合气体，在表面上选择性地进行气相沉积难熔金属 的衬底的硅层。

公开(公告)号：US4597167A

公开(公告)日：1986-07-01

申请号：US641191

申请日：1984-08-16

申请人： Takahiko Moriya ,  Saburo Nakada

发明人： Takahiko Moriya ,  Saburo Nakada

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L29/417 ,  H01L21/225

CPC分类号： H01L29/41775 ,  H01L21/28 ,  H01L21/28562 ,  H01L21/76879 ,  Y10S148/019 ,  Y10S148/02 ,  Y10S148/026

摘要： A method of producing a semiconductor device, including the steps of introducing an impurity of one conductivity type into a semiconductor substrate of an opposite conductivity type having an insulating film pattern formed on a surface thereof, using the insulating film pattern as a mask to form a diffusion layer; and forming a metal film on the diffusion layer by selective vapor growth with a mixture of a metal source gas and a carrier gas used as a feed gas. The vapor growth is carried out such that the distance of entry of the metal film from the edge of the insulating film pattern to the interface between the insulating film pattern and the diffusion layer is smaller than the depth of the pn junction of the diffusion layer. The particular method makes it possible to achieve a selective vapor growth of a metal film on the diffusion layer without deteriorating the pn junction characteristics.

摘要翻译： 一种制造半导体器件的方法，包括以下步骤：使用绝缘膜图案作为掩模将具有一种导电类型的杂质引入到具有形成在其表面上的绝缘膜图案的相反导电类型的半导体衬底中以形成 扩散层; 以及通过选择性气相生长在金属源气体和用作进料气体的载气的混合物上在扩散层上形成金属膜。 进行蒸气生长，使得金属膜从绝缘膜图案的边缘进入绝缘膜图案和扩散层之间的界面的距离小于扩散层的pn结的深度。 特定的方法使得可以在扩散层上实现金属膜的选择性气相生长而不劣化pn结特性。

公开(公告)号：US4582563A

公开(公告)日：1986-04-15

申请号：US675859

申请日：1984-11-28

申请人： Yoshikazu Hazuki ,  Takahiko Moriya

发明人： Yoshikazu Hazuki ,  Takahiko Moriya

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  B44C1/22 ,  C23F1/02 ,  H01L23/48 ,  H01L29/46

CPC分类号： H01L21/76879

摘要： First conductive members are buried in first holes formed in a first insulating film to connect the second interconnection layers, formed through first and second insulating films, to a semiconductor substrate. Second conductive members are buried in second holes formed to be positioned on the first holes of the second insulating film. Thus, the reliability of a semiconductor device of a multi-layer interconnection structure is improved, and the integration thereof is improved.

摘要翻译： 第一导电构件被埋在形成在第一绝缘膜中的第一孔中，以将通过第一和第二绝缘膜形成的第二互连层连接到半导体衬底。 第二导电构件被埋在形成为定位在第二绝缘膜的第一孔上的第二孔中。 因此，提高了多层互连结构的半导体器件的可靠性，并且提高了其一体化。

公开(公告)号：US5580615A

公开(公告)日：1996-12-03

申请号：US224179

申请日：1994-04-07

申请人： Hitoshi Itoh ,  Takahiko Moriya

发明人： Hitoshi Itoh ,  Takahiko Moriya

IPC分类号： H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  B05D3/00

CPC分类号： H01L21/32051 ,  H01L21/76879

摘要： A method of forming a conductive film on an insulating region of a substrate wherein a surface of the insulating region formed on the substrate is activated by irradiating the surface with electrons, ions or light. Next, a metal film pattern constituting, for example, an electrical interconnection, is deposited on the surface by applying a selective chemical vapor deposition process using a metal halide gas.

摘要翻译： 在基板的绝缘区域上形成导电膜的方法，其中通过用电子，离子或光照射表面来激活形成在基板上的绝缘区域的表面。 接下来，通过使用金属卤化物气体的选择性化学气相沉积工艺，在表面上沉积构成例如电互连的金属膜图案。

公开(公告)号：US5234869A

公开(公告)日：1993-08-10

申请号：US721819

申请日：1991-06-26

申请人： Yuuichi Mikata ,  Takahiko Moriya

发明人： Yuuichi Mikata ,  Takahiko Moriya

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/318

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3185 ,  Y10S148/114

摘要： According to this invention, there is disclosed a method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, including the steps of setting a plurality of semiconductor wafers in a boat in a reaction furnace, increasing a temperature in the reaction tube to a predetermined temperature and decreasing a pressure in the reaction tube to a predetermined pressure, and supplying Si(N(CH.sub.3).sub.2).sub.4 gas from a first gas source to the reaction tube and supplying NH.sub.3 gas from a second gas source to the reaction tube.

公开(公告)号：US5223455A

公开(公告)日：1993-06-29

申请号：US885901

申请日：1992-05-18

申请人： Hitoshi Itoh ,  Takahiko Moriya

发明人： Hitoshi Itoh ,  Takahiko Moriya

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28562 ,  H01L21/76879

摘要： A method for forming a refractory metal film on a substrate utilizes a reduction reaction of the halides of the refractory metal with respect to monosilane, disilane, or the halides of monosilane and disilane to form the refractory metal film while suppressing the reaction by adding a hydrogen gas. As a result, the refractory metal film is formed with good quality at a high speed, or deposited selectively on the nitrides, etc., of metal.

摘要翻译： 在基板上形成难熔金属膜的方法利用难熔金属的卤化物相对于甲硅烷，乙硅烷或甲硅烷和乙硅烷的卤化物的还原反应，形成难熔金属膜，同时通过加入氢来抑制反应 加油站。 结果，难熔金属膜以高速高质量地形成，或者选择性地沉积在金属的氮化物等上。

公开(公告)号：US4063973A

公开(公告)日：1977-12-20

申请号：US738841

申请日：1976-11-04

申请人： Kei Kirita ,  Yasutaka Tsuji ,  Takahiko Moriya

发明人： Kei Kirita ,  Yasutaka Tsuji ,  Takahiko Moriya

IPC分类号： H01L21/225 ,  H01L21/74

CPC分类号： H01L21/2257 ,  H01L21/74 ,  Y10S148/085 ,  Y10S148/122

摘要： A non-monocrystalline semiconductor layer which contains predetermined impurities is disposed on a semiconductor substrate. Then, on this semiconductor layer an oxide layer is formed which contains the same type impurities as in the semiconductor layer. The device is then heated at a high temperature, thus causing the impurities to diffuse into the semiconductor substrate and form impurity diffused regions. Suitable electrodes are deposited on the impurity diffused regions.

摘要翻译： 含有预定杂质的非单晶半导体层设置在半导体衬底上。 然后，在该半导体层上形成含有与半导体层相同的杂质的氧化物层。 然后将器件在高温下加热，从而使杂质扩散到半导体衬底中并形成杂质扩散区域。 合适的电极沉积在杂质扩散区域上。