公开(公告)号：US5252133A

公开(公告)日：1993-10-12

申请号：US809122

申请日：1991-12-18

申请人： Shinji Miyazaki ,  Yuichi Mikata ,  Takahiko Moriya ,  Reiji Niino ,  Motohiko Nishimura

发明人： Shinji Miyazaki ,  Yuichi Mikata ,  Takahiko Moriya ,  Reiji Niino ,  Motohiko Nishimura

IPC分类号： H01L21/31 ,  C23C16/44 ,  C23C16/455 ,  C30B25/14 ,  H01L21/205 ,  H01L21/22 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/45578 ,  C30B25/14

摘要： A vertically oriented CVD apparatus comprises a reaction chamber, a boat means vertically placed in the reaction chamber to horizontally support a plurality of semiconductor substrates, and a gas inlet tube including a plurality of gas injection holes along a longitudinal axis thereof and extending along a longitudinal side of the boat means to introduce a reaction gas into the reaction chamber. In the structure, a direction of each of the gas injection holes is set at an angle .theta. with respect to a reference line given by a straight line connecting a center of the gas inlet tube to a center of one of the semiconductor wafers, the angle .theta. being defined by 0.degree.

公开(公告)号：US4283439A

公开(公告)日：1981-08-11

申请号：US144836

申请日：1980-04-29

申请人： Iwao Higashinakagawa ,  Syohei Sima ,  Takahiko Moriya

发明人： Iwao Higashinakagawa ,  Syohei Sima ,  Takahiko Moriya

IPC分类号： H01L23/522 ,  H01L21/285 ,  H01L21/60 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L24/02 ,  H01L21/28518 ,  H01L23/53257 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/1305 ,  Y10S148/015 ,  Y10S148/018 ,  Y10S148/02 ,  Y10S148/147

摘要： A method of manufacturing a semiconductor device comprises the steps of forming an interconnection electrode made of a refractory metal or a silicide of the metal on an insulating film formed on a semiconductor substrate with necessary elements already formed, forming a silicon nitride film on the interconnection electrode, and forming a silicon oxide film on the silicon nitride film, thereby preventing the elements from being deteriorated.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在已经形成的必要元件的半导体衬底上形成的绝缘膜上形成由难熔金属或金属硅化物构成的互连电极，在互连电极上形成氮化硅膜 ，并且在氮化硅膜上形成氧化硅膜，从而防止元件劣化。

公开(公告)号：US4650698A

公开(公告)日：1987-03-17

申请号：US780242

申请日：1985-09-26

申请人： Takahiko Moriya ,  Saburo Nakada

发明人： Takahiko Moriya ,  Saburo Nakada

IPC分类号： C03C17/36 ,  C23C16/02 ,  C23C16/44 ,  H01L21/285 ,  B05D7/22 ,  C23C16/06

CPC分类号： C03C17/3607 ,  C03C17/36 ,  C03C17/3636 ,  C03C17/3649 ,  C23C16/0272 ,  C23C16/4404 ,  H01L21/285

摘要： A method of forming with good reproducibility a high-quality thin film of a metal or metal compound by a vapor growth method on a substrate placed in a quartz reaction tube which has the steps of, prior to the formation of the thin film forming an intermediate film of a material having good adhesion with both quartz, and the metal or metal compound on the inner wall of the reaction tube, and forming a film of the metal or metal compound for the thin film on the intermediate film.

摘要翻译： 在置于石英反应管中的基板上通过气相生长法在金属或金属化合物上形成高质量的金属或金属化合物的薄膜的方法，该方法具有以下步骤：在形成中间体的薄膜之前， 与石英两者具有良好粘附性的材料的膜，以及在反应管的内壁上的金属或金属化合物，并且在中间膜上形成用于薄膜的金属或金属化合物的膜。

公开(公告)号：US4377438A

公开(公告)日：1983-03-22

申请号：US304677

申请日：1981-09-22

申请人： Takahiko Moriya ,  Yoshikazu Hazuki ,  Masahiro Kashiwagi

发明人： Takahiko Moriya ,  Yoshikazu Hazuki ,  Masahiro Kashiwagi

IPC分类号： H01L21/3105 ,  H01L21/311 ,  H01L21/768 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L21/76819 ,  H01L21/31055 ,  H01L21/31116

摘要： A method for producing a semiconductor device has the steps of forming an insulating film on an uneven surface of a semiconductor body; and dry etching the insulating film by using as an etchant a gas containing carbon-halogen bonds and hydrogen, whereby the surface of said insulating film is smoothed.

摘要翻译： 半导体器件的制造方法具有在半导体本体的凹凸面上形成绝缘膜的工序; 并且通过使用含有碳 - 卤键和氢的气体作为蚀刻剂来干蚀​​刻所述绝缘膜，由此使所述绝缘膜的表面平滑。

公开(公告)号：US5580615A

公开(公告)日：1996-12-03

申请号：US224179

申请日：1994-04-07

申请人： Hitoshi Itoh ,  Takahiko Moriya

发明人： Hitoshi Itoh ,  Takahiko Moriya

IPC分类号： H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  B05D3/00

CPC分类号： H01L21/32051 ,  H01L21/76879

摘要： A method of forming a conductive film on an insulating region of a substrate wherein a surface of the insulating region formed on the substrate is activated by irradiating the surface with electrons, ions or light. Next, a metal film pattern constituting, for example, an electrical interconnection, is deposited on the surface by applying a selective chemical vapor deposition process using a metal halide gas.

摘要翻译： 在基板的绝缘区域上形成导电膜的方法，其中通过用电子，离子或光照射表面来激活形成在基板上的绝缘区域的表面。 接下来，通过使用金属卤化物气体的选择性化学气相沉积工艺，在表面上沉积构成例如电互连的金属膜图案。

公开(公告)号：US5380370A

公开(公告)日：1995-01-10

申请号：US54229

申请日：1993-04-30

申请人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

发明人： Reiji Niino ,  Yoshiyuki Fujita ,  Hideki Lee ,  Yasuo Imamura ,  Toshiharu Nishimura ,  Yuuichi Mikata ,  Shinji Miyazaki ,  Takahiko Moriya ,  Katsuya Okumura

IPC分类号： B08B9/032 ,  C23C16/24 ,  C23C16/40 ,  C23C16/44 ,  B08B7/00 ,  B08B9/00

CPC分类号： C23C16/24 ,  C23C16/405 ,  C23C16/4405 ,  C23C16/4412

摘要： Prior to formation of a polysilicon film on a wafer, a pre-coat film having a thickness of 1 .mu.m and consisting of polysilicon is formed on the inner wall surface of a reaction tube or the surface of a member incorporated in the reaction tube. A polysilicon film is formed on the wafer at a temperature of 450.degree. C. to 650.degree. C. A cleaning gas containing ClF.sub.3 having a concentration of 10 to 50 vol. % is supplied into the reaction tube at a flow rate to an area of an object be cleaned of 750 to 3,500 SCCM/m.sup.2 to remove a polysilicon film deposited on the inner wall surface of the reaction tube or the surface of the member incorporated in the reaction tube by etching using the ClF.sub.3. In this case, the cleaning gas is supplied while a temperature in the reaction tube is kept at a temperature of 450.degree. C. to 650.degree. C. and in a pressure condition set at the kept temperature such that an etching rate of a polysilicon film by the cleaning gas is higher than an etching rate of quartz constituting the reaction tube or the member incorporated in the reaction tube.

摘要翻译： 在晶片上形成多晶硅膜之前，在反应管的内壁表面或装在反应管中的部件的表面上形成厚度为1μm，由多晶硅组成的预涂膜。 在450℃〜650℃的温度下在晶片上形成多晶硅膜。含有浓度为10〜50体积％的ClF 3的清洗气体。 以以750至3,500sccm / m 2的待清洁物体的面积的流量将反应管供给到反应管中以去除沉积在反应管的内壁表面上的多晶硅膜或者包含在反应管中的构件的表面 反应管通过使用ClF3进行蚀刻。 在这种情况下，在将反应管中的温度保持在450℃至650℃的温度下并在设定为保持的温度的压力条件下供给清洁气体，使得多晶硅膜的蚀刻速率 清洗气体高于构成反应管或构成反应管的部件的石英的蚀刻速度。

公开(公告)号：US5234869A

公开(公告)日：1993-08-10

申请号：US721819

申请日：1991-06-26

申请人： Yuuichi Mikata ,  Takahiko Moriya

发明人： Yuuichi Mikata ,  Takahiko Moriya

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/318

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3185 ,  Y10S148/114

摘要： According to this invention, there is disclosed a method of manufacturing a silicon nitride film on a semiconductor substrate using a low-pressure CVD apparatus, including the steps of setting a plurality of semiconductor wafers in a boat in a reaction furnace, increasing a temperature in the reaction tube to a predetermined temperature and decreasing a pressure in the reaction tube to a predetermined pressure, and supplying Si(N(CH.sub.3).sub.2).sub.4 gas from a first gas source to the reaction tube and supplying NH.sub.3 gas from a second gas source to the reaction tube.

公开(公告)号：US5223455A

公开(公告)日：1993-06-29

申请号：US885901

申请日：1992-05-18

申请人： Hitoshi Itoh ,  Takahiko Moriya

发明人： Hitoshi Itoh ,  Takahiko Moriya

IPC分类号： H01L21/285 ,  H01L21/768

CPC分类号： H01L21/28562 ,  H01L21/76879

摘要： A method for forming a refractory metal film on a substrate utilizes a reduction reaction of the halides of the refractory metal with respect to monosilane, disilane, or the halides of monosilane and disilane to form the refractory metal film while suppressing the reaction by adding a hydrogen gas. As a result, the refractory metal film is formed with good quality at a high speed, or deposited selectively on the nitrides, etc., of metal.

摘要翻译： 在基板上形成难熔金属膜的方法利用难熔金属的卤化物相对于甲硅烷，乙硅烷或甲硅烷和乙硅烷的卤化物的还原反应，形成难熔金属膜，同时通过加入氢来抑制反应 加油站。 结果，难熔金属膜以高速高质量地形成，或者选择性地沉积在金属的氮化物等上。

公开(公告)号：US4063973A

公开(公告)日：1977-12-20

申请号：US738841

申请日：1976-11-04

申请人： Kei Kirita ,  Yasutaka Tsuji ,  Takahiko Moriya

发明人： Kei Kirita ,  Yasutaka Tsuji ,  Takahiko Moriya

IPC分类号： H01L21/225 ,  H01L21/74

CPC分类号： H01L21/2257 ,  H01L21/74 ,  Y10S148/085 ,  Y10S148/122

摘要： A non-monocrystalline semiconductor layer which contains predetermined impurities is disposed on a semiconductor substrate. Then, on this semiconductor layer an oxide layer is formed which contains the same type impurities as in the semiconductor layer. The device is then heated at a high temperature, thus causing the impurities to diffuse into the semiconductor substrate and form impurity diffused regions. Suitable electrodes are deposited on the impurity diffused regions.

摘要翻译： 含有预定杂质的非单晶半导体层设置在半导体衬底上。 然后，在该半导体层上形成含有与半导体层相同的杂质的氧化物层。 然后将器件在高温下加热，从而使杂质扩散到半导体衬底中并形成杂质扩散区域。 合适的电极沉积在杂质扩散区域上。

公开(公告)号：US5048800A

公开(公告)日：1991-09-17

申请号：US563345

申请日：1990-08-07

申请人： Shinji Miyazaki ,  Takahiko Moriya ,  Yasushi Yagi ,  Mituaki Komino ,  Katuhiko Iwabuchi

发明人： Shinji Miyazaki ,  Takahiko Moriya ,  Yasushi Yagi ,  Mituaki Komino ,  Katuhiko Iwabuchi

IPC分类号： C23C16/54 ,  C30B25/10 ,  C30B31/12 ,  F27B17/00 ,  F27D1/00 ,  H01L21/00

CPC分类号： H01L21/67115 ,  C23C16/54 ,  C30B25/10 ,  C30B31/12 ,  F27B17/0025 ,  F27D1/0033

摘要： A vertical heat treatment apparatus includes a reaction furnace constituted by a reaction chamber having an inner tube and an outer tube and a heater arranged outside the reaction chamber, a manifold communicating with a lower portion of the reaction chamber to support the reaction chamber and a gas being supplied and exhausted through the mainfold, a hollow vessel, arranged together with the boat in the reaction furnace, for supporting a lower end of a boat having objects, and a plurality of first heat-insulating members detachably arranged in the hollow vessel, wherein the number of the first insulating members is adjusted to adjust a heat-insulating effect. The first heat-insulating member includes a fin unit constituted by fins horizontally arranged at predetermined intervals and spacers for keeping the intervals between the fins.

摘要翻译： 立式热处理装置包括由反应室构成的反应炉，该反应室具有内管和外管以及布置在反应室外部的加热器，与反应室的下部连通以支撑反应室的歧管和气体 通过主折叠供应和排出的中空容器，与反应炉中的船一起布置的用于支撑具有物体的船的下端的中空容器，以及可拆卸地布置在中空容器中的多个第一绝热构件，其中 调整第一绝缘构件的数量以调节绝热效果。 第一绝热构件包括由以预定间隔水平布置的翅片构成的翅片单元和用于保持翅片之间的间隔的间隔件。