公开(公告)号：US08217458B2

公开(公告)日：2012-07-10

申请号：US12636314

申请日：2009-12-11

申请人： Keith Golke ,  Jeff Graebel

发明人： Keith Golke ,  Jeff Graebel

IPC分类号： H01L23/62 ,  H01L29/72 ,  H01L21/82

CPC分类号： H01L27/0255 ,  H01L27/0296 ,  H01L2924/0002 ,  H01L2924/00

摘要： The disclosure describes an antenna protection circuit for use in circuits where Single Event Transients from energetic particles is a concern. The antenna protection circuit may include at least three diodes, connected electrically in series and arranged such that at most all but one of the at least three diodes produce a transient current pulse from an energetic particle. During the transient current pulse event, the remaining diode remains reverse biased thereby sufficiently blocking the transient current pulse and an SET does not occur on the signal node. The antenna protection circuit may be constructed so that no unshorted parasitic p-n junction structure is associated with any of the diodes in the circuit, which would otherwise have to be explicitly included in the at least three diodes.

摘要翻译： 本公开描述了一种用于电路中的天线保护电路，其中关注高能粒子的单事件瞬变。 天线保护电路可以包括至少三个二极管，其串联电连接并且布置成使得至少三个二极管中的至少所有的二极管中的至少一个产生来自能量粒子的瞬态电流脉冲。 在瞬态电流脉冲事件期间，剩余的二极管保持反向偏置，从而充分阻止瞬态电流脉冲，并且在信号节点上不发生SET。 天线保护电路可以被构造成使得没有未排序的寄生p-n结结构与电路中的任何二极管相关联，否则这些二极管否则必须明确地包括在至少三个二极管中。

公开(公告)号：US07964897B2

公开(公告)日：2011-06-21

申请号：US12177332

申请日：2008-07-22

申请人： Paul S. Fechner ,  Bradley Larsen ,  Gregor Dougal ,  Keith Golke

发明人： Paul S. Fechner ,  Bradley Larsen ,  Gregor Dougal ,  Keith Golke

IPC分类号： H01L29/76 ,  H01L21/335

CPC分类号： H01L21/84 ,  H01L29/66772 ,  H01L29/78615

摘要： A process flow for fabricating shallow trench isolation (STI) devices with direct body tie contacts is provided. The process flow follows steps similar to standard STI fabrication methods except that in one of the etching steps, body tie contacts are etched through the nitride layer and STI oxide layer, directly to the body tie. This process flow provides a direct body tie contact to mitigate floating body effects but also eliminates hysteresis and transient upset effects common in non-direct body tie contact configurations, without the critical alignment requirements and critical dimension control of the layout.

摘要翻译： 提供了一种用于制造具有直接身体接头的浅沟槽隔离（STI）装置的工艺流程。 工艺流程遵循类似于标准STI制造方法的步骤，除了在其中一个蚀刻步骤中，通过氮化物层和STI氧化物层直接将身体接头触点蚀刻到身体接合处。 该过程流程提供了直接的身体接触以减轻浮体效应，但也消除了非直接身体接头接触配置中常见的滞后和瞬态扰动效应，而不需要布局的关键对准要求和关键尺寸控制。

公开(公告)号：US08451062B2

公开(公告)日：2013-05-28

申请号：US13190285

申请日：2011-07-25

申请人： James D. Seefeldt ,  Keith Golke

发明人： James D. Seefeldt ,  Keith Golke

IPC分类号： H03F3/68

CPC分类号： H03F3/45183 ,  H03F3/211 ,  H03F2203/45352 ,  H03F2203/45366 ,  H03F2203/45674

摘要： This disclosure is directed to techniques for preventing or reducing perturbations of an output signal of a differential amplifier caused by ionizing radiation incident upon the amplifier. The amplifier may include an amplification module that includes a plurality of amplification units configured to amplify a difference between a first component and a second component of a differential voltage signal to generate a plurality of amplified difference signals each corresponding to the amplified difference. The amplifier may further include a combination module that combines the plurality of amplified difference signals to generate a common output signal corresponding to the amplified difference.

摘要翻译： 本公开涉及用于防止或减少由入射在放大器上的电离辐射引起的差分放大器的输出信号的扰动的技术。 放大器可以包括放大模块，其包括多个放大单元，其被配置为放大差分电压信号的第一分量和第二分量之间的差，以产生每个对应于放大差值的多个放大差分信号。 放大器还可以包括组合多个放大的差分信号以产生对应于放大差分的公共输出信号的组合模块。

公开(公告)号：US20130009664A1

公开(公告)日：2013-01-10

申请号：US13176405

申请日：2011-07-05

申请人： Keith Golke

发明人： Keith Golke

IPC分类号： H03K19/003

CPC分类号： H03K19/00338

摘要： This disclosure describes voting circuits where an output is generated based on a plurality of inputs. A first plurality of logic paths connects the output to a high voltage. Each logic path of the first plurality of logic paths includes two transistors. A second plurality of logic paths connects the output to the low voltage. Each logic path of the second plurality of logic paths comprises two transistors. Based on N or N−1 of the inputs agreeing, the output is driven to either the low voltage or the high voltage via a subset of logic paths of the first and second plurality of logic paths.

摘要翻译： 本公开描述了基于多个输入产生输出的投票电路。 第一多个逻辑路径将输出连接到高电压。 第一多个逻辑路径的每个逻辑路径包括两个晶体管。 第二多个逻辑路径将输出连接到低电压。 第二多个逻辑路径的每个逻辑路径包括两个晶体管。 基于输入的N或N-1同意，经由第一和第二多个逻辑路径的逻辑路径的子集将输出驱动为低电压或高电压。

公开(公告)号：US20100019320A1

公开(公告)日：2010-01-28

申请号：US12177332

申请日：2008-07-22

申请人： Paul Fechner ,  Bradley Larsen ,  Gregor Dougal ,  Keith Golke

发明人： Paul Fechner ,  Bradley Larsen ,  Gregor Dougal ,  Keith Golke

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L21/84 ,  H01L29/66772 ,  H01L29/78615

摘要： A process flow for fabricating shallow trench isolation (STI) devices with direct body tie contacts is provided. The process flow follows steps similar to standard STI fabrication methods except that in one of the etching steps, body tie contacts are etched through the nitride layer and STI oxide layer, directly to the body tie. This process flow provides a direct body tie contact to mitigate floating body effects but also eliminates hysteresis and transient upset effects common in non-direct body tie contact configurations, without the critical alignment requirements and critical dimension control of the layout.

摘要翻译： 提供了一种用于制造具有直接身体接头的浅沟槽隔离（STI）装置的工艺流程。 工艺流程遵循类似于标准STI制造方法的步骤，除了在其中一个蚀刻步骤中，通过氮化物层和STI氧化物层直接将身体接头触点蚀刻到身体接合处。 该过程流程提供了直接的身体接触以减轻浮体效应，但也消除了非直接身体接头接触配置中常见的滞后和瞬态扰动效应，而不需要布局的关键对准要求和关键尺寸控制。

公开(公告)号：US20090230440A1

公开(公告)日：2009-09-17

申请号：US12352349

申请日：2009-01-12

申请人： James Seefeldt, III ,  Keith Golke

发明人： James Seefeldt, III ,  Keith Golke

IPC分类号： H01L29/78

CPC分类号： H01L29/78654 ,  H01L29/78612

摘要： Described herein is a majority carrier device. Specifically, an exemplary device may comprise source, channel, and drain regions in a thin semiconductor layer, and the source, channel, and drain region may all share a single doping type of varying concentrations. Further, the device may comprise an insulating layer above the channel region and a gate region above the insulating layer, such that the gate modulates the channel. The device described herein may eliminate the parasitic bipolar transistor and the sensitivity to excess minority carrier generation that results from single event effects (SEE) such as heavy ion hits.

摘要翻译： 这里描述的是多数载体装置。 具体地，示例性器件可以包括薄半导体层中的源极，沟道和漏极区域，并且源极，沟道和漏极区域可以共享不同浓度的单一掺杂类型。 此外，器件可以包括在沟道区域上方的绝缘层和绝缘层上方的栅极区域，使得栅极调制沟道。 本文描述的器件可以消除寄生双极晶体管，以及由单次事件效应（SEE）如重离子命中产生的对少数载流子过剩的敏感性。

公开(公告)号：US20070162880A1

公开(公告)日：2007-07-12

申请号：US11330882

申请日：2006-01-12

申请人： Roy Carlson ,  Keith Golke

发明人： Roy Carlson ,  Keith Golke

IPC分类号： G06F17/50

CPC分类号： H01L27/0255

摘要： An antenna diode circuit is described. The antenna diode circuit includes two diodes connected in series between a signal line and ground. Alternatively, the antenna diode circuit is connected in series between a signal line and a power supply. In addition to protecting the signal line from charge accumulation during wafer fabrication, the antenna diode circuit prevents a single event transient glitch caused by a particle strike to either one of the diodes in the antenna diode circuit.

摘要翻译： 描述了天线二极管电路。 天线二极管电路包括串联在信号线和地之间的两个二极管。 或者，天线二极管电路串联连接在信号线和电源之间。 除了在晶片制造期间保护信号线免受电荷累积之外，天线二极管电路防止由天线二极管电路中的任一个二极管的粒子撞击引起的单个事件瞬态毛刺。