公开(公告)号：US07465993B2

公开(公告)日：2008-12-16

申请号：US11654638

申请日：2007-01-18

申请人： Ki-Tae Lee ,  Han-Gu Kim ,  Jae-Hyok Ko

发明人： Ki-Tae Lee ,  Han-Gu Kim ,  Jae-Hyok Ko

IPC分类号： H01L23/62

CPC分类号： H01L23/60 ,  H01L27/0255 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor chip may include a plurality of pads arranged in at least a first and a second row, and a plurality of protection circuits connected to the plurality of pads. The plurality of protection circuits may include at least one diode. A first protection circuit may be connected to a first pad in the first row of pads, and a second protection circuit may be connected to a second pad in the second row of pads. The first and second protection circuits may be arranged under the first row of pads.

摘要翻译： 半导体芯片可以包括布置在至少第一和第二行中的多个焊盘以及连接到多个焊盘的多个保护电路。 多个保护电路可以包括至少一个二极管。 第一保护电路可以连接到第一排焊盘中的第一焊盘，并且第二保护电路可以连接到第二排焊盘中的第二焊盘。 第一和第二保护电路可以布置在第一排焊盘的下方。

公开(公告)号：US09620502B2

公开(公告)日：2017-04-11

申请号：US14178480

申请日：2014-02-12

申请人： Chan-Hee Jeon ,  Eun-Kyoung Kwon ,  Il-Ryong Kim ,  Han-Gu Kim ,  Woo-Jin Seo ,  Ki-Tae Lee

发明人： Chan-Hee Jeon ,  Eun-Kyoung Kwon ,  Il-Ryong Kim ,  Han-Gu Kim ,  Woo-Jin Seo ,  Ki-Tae Lee

IPC分类号： H01L27/088 ,  H01L29/66 ,  H01L27/11

CPC分类号： H01L21/823814 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/266 ,  H01L21/76805 ,  H01L21/76895 ,  H01L21/823821 ,  H01L21/823871 ,  H01L23/535 ,  H01L27/0288 ,  H01L27/0886 ,  H01L27/0924 ,  H01L27/1104 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848

摘要： In one embodiment, the semiconductor device includes at least one active fin protruding from a substrate, a first gate electrode crossing the active fin, and a first impurity region formed on the active fin at a first side of the first gate electrode. At least a portion of the first impurity region is formed in a first epitaxial layer portion on the active fin. A second impurity region is formed on the active fin at a second side of the first gate electrode. The second impurity region has at least a portion not formed in an epitaxial layer.

公开(公告)号：US07417282B2

公开(公告)日：2008-08-26

申请号：US11265583

申请日：2005-11-02

申请人： Sung-Pil Jang ,  Han-Gu Kim ,  Chan-Hee Jeon

发明人： Sung-Pil Jang ,  Han-Gu Kim ,  Chan-Hee Jeon

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/00

CPC分类号： H01L29/7809 ,  H01L29/42368 ,  H01L29/7805

摘要： The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the drain region is a first diffusion structure in which a heavily doped diffusion layer of a second conductivity type is formed in a body region of a second conductivity type. Another source region is a second diffusion structure in which a heavily doped diffusion layer of a first conductivity type and a heavily doped diffusion layer of the second conductivity type are formed in the body region of the second conductivity type. An impurity diffusion structure of the source region in close proximity to the drain region is changed to be operated as a diode, thereby forming a strong current path to ESD (Electro-Static Discharge) or EOS (Electrical Over Stress). As a result, it is possible to prevent the device from being broken down.

摘要翻译： 本文公开的本发明是包含反向二极管的垂直双扩散金属氧化物半导体（VDMOS）器件。 该器件包括从漏极区域隔离的多个源极区域。 靠近漏极区域的源极区域是第一扩散结构，其中在第二导电类型的体区域中形成第二导电类型的重掺杂扩散层。 另一个源区是第二扩散结构，其中在第二导电类型的体区中形成第一导电类型的重掺杂扩散层和第二导电类型的重掺杂扩散层。 改变靠近漏区的源极区的杂质扩散结构作为二极管工作，从而形成ESD（静电放电）或EOS（电过压）的强电流路径。 结果，可以防止装置分解。

公开(公告)号：US20050100861A1

公开(公告)日：2005-05-12

申请号：US11019973

申请日：2004-12-23

申请人： Young-Wook Choi ,  Yong-Chang Choi ,  Shin-Koo Kim ,  Han-Gu Kim ,  Jai-Hyun Lee

发明人： Young-Wook Choi ,  Yong-Chang Choi ,  Shin-Koo Kim ,  Han-Gu Kim ,  Jai-Hyun Lee

IPC分类号： A61C13/00 ,  A61C8/00 ,  A61C3/02

CPC分类号： A61C8/0025 ,  A61C8/0022

摘要： A dental implant includes a fixture and an abutment in a body, and a head for a compaction drill is configured for implanting such an implant. The implant includes an upper abutment portion on which a denture is fixed, a fixture portion implanted in the jawbone and forming single or double threads, and a settling portion formed between the abutment portion and the fixture portion. The invention improves the stability of the implant, improves stabilization of the bone tissue affixed to the implant, effectively seals the socket from its surroundings and facilitates bonding between implant and jawbone. This is achieved because of the early healing of tissue around the implant and the greater surface area in contact with surrounding tissue. As a result, an artificial crown may be coupled with the implant during the same surgery.

摘要翻译： 牙科植入物包括固定件和主体中的邻接部，并且用于压实钻头的头部被配置用于植入这种植入物。 植入物包括固定义齿的上邻接部分，植入颚骨中并形成单线或双线的固定部分和形成在邻接部分和固定部分之间的沉降部分。 本发明改善了植入物的稳定性，改善了固定在植入物上的骨组织的稳定性，有效地将插座与其周围环境密封，并有助于植入物和颚骨之间的结合。 这是由于植入物周围的组织的早期愈合以及与周围组织接触的较大的表面积而实现的。 结果，在相同的手术期间，人造冠可与植入物结合。

公开(公告)号：US20060124994A1

公开(公告)日：2006-06-15

申请号：US11265583

申请日：2005-11-02

申请人： Sung-Pil Jang ,  Han-Gu Kim ,  Chan-Hee Jeon

发明人： Sung-Pil Jang ,  Han-Gu Kim ,  Chan-Hee Jeon

IPC分类号： H01L29/76

CPC分类号： H01L29/7809 ,  H01L29/42368 ,  H01L29/7805

摘要： The present invention disclosed herein is a Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS) device incorporating a reverse diode. This device includes a plurality of source regions isolated from a drain region. A source region in close proximity to the drain region is a first diffusion structure in which a heavily doped diffusion layer of a second conductivity type is formed in a body region of a second conductivity type. Another source region is a second diffusion structure in which a heavily doped diffusion layer of a first conductivity type and a heavily doped diffusion layer of the second conductivity type are formed in the body region of the second conductivity type. An impurity diffusion structure of the source region in close proximity to the drain region is changed to be operated as a diode, thereby forming a strong current path to ESD (Electro-Static Discharge) or EOS (Electrical Over Stress). As a result, it is possible to prevent the device from being broken down.

摘要翻译： 本文公开的本发明是包含反向二极管的垂直双扩散金属氧化物半导体（VDMOS）器件。 该器件包括从漏极区域隔离的多个源极区域。 靠近漏极区域的源极区域是第一扩散结构，其中在第二导电类型的体区域中形成第二导电类型的重掺杂扩散层。 另一个源区是第二扩散结构，其中在第二导电类型的体区中形成第一导电类型的重掺杂扩散层和第二导电类型的重掺杂扩散层。 改变靠近漏极区的源极区的杂质扩散结构作为二极管工作，从而形成ESD（静电放电）或EOS（电过压）的强电流路径。 结果，可以防止装置分解。

公开(公告)号：US06981873B2

公开(公告)日：2006-01-03

申请号：US10432627

申请日：2001-11-14

申请人： Young-Wook Choi ,  Yong-Chang Choi ,  Shin-Koo Kim ,  Han-Gu Kim ,  Jai-Hyun Lee

发明人： Young-Wook Choi ,  Yong-Chang Choi ,  Shin-Koo Kim ,  Han-Gu Kim ,  Jai-Hyun Lee

IPC分类号： A61C8/00

CPC分类号： A61C8/0025 ,  A61C8/0022

摘要： A dental implant includes a fixture and an abutment in a body, and a head for a compaction drill is configured for implanting such an implant. The implant includes an upper abutment portion on which a denture is fixed, a fixture portion implanted in the jawbone and forming single or double threads, and a settling portion formed between the abutment portion and the fixture portion. The invention improves the stability of the implant, improves stabilization of the bone tissue affixed to the implant, effectively seals the socket from its surroundings and facilitates bonding between implant and jawbone. This is achieved because of the early healing of tissue around the implant and the greater surface area in contact with surrounding tissue. As a result, an artificial crown may be coupled with the implant during the same surgery.

摘要翻译： 牙科植入物包括固定件和主体中的邻接部，并且用于压实钻头的头部被配置用于植入这种植入物。 植入物包括固定义齿的上邻接部分，植入颚骨中并形成单线或双线的固定部分和形成在邻接部分和固定部分之间的沉降部分。 本发明改善了植入物的稳定性，改善了固定在植入物上的骨组织的稳定性，有效地将插座与其周围环境密封，并有助于植入物和颚骨之间的结合。 这是由于植入物周围的组织的早期愈合以及与周围组织接触的较大的表面积而实现的。 结果，在相同的手术期间，人造冠可与植入物结合。