公开(公告)号：US20210013290A1

公开(公告)日：2021-01-14

申请号：US16923444

申请日：2020-07-08

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  InTak CHO ,  PilSang YUN

IPC: H01L27/32 ,  G09G3/3291

Abstract: Provided is an electronic device. The electronic device includes at least one first transistor to which a data voltage is applied. The first transistor includes a first conductive layer disposed on a substrate and a first active layer, which is disposed on the first conductive layer, has one end and the other end which are made conductive, and includes a first channel region disposed between the one end and the other end. A second conductive layer overlapping the first conductive layer with a first insulating layer interposed between the second conductive layer and the first conductive layer is included in a storage capacitor in a panel, and the storage capacitor is disposed under the first channel region of the first active layer. In this way, an ultra-high definition panel is fabricated.

公开(公告)号：US20200161475A1

公开(公告)日：2020-05-21

申请号：US16574725

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： InTak CHO ,  JungSeok SEO ,  SeHee PARK ,  Jaeyoon PARK ,  SangYun SUNG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/10

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including a first electrode disposed on a substrate, an insulation pattern disposed on the substrate, the insulation pattern overlapping with an edge of the first electrode, a second electrode disposed on an upper surface of the insulation pattern, an active layer disposed on the first electrode, the insulation pattern and the second electrode, a gate insulating film disposed on the active layer, and a gate electrode disposed on the gate insulating film, in which a first portion of the active layer overlaps with the first electrode, a second portion of the active layer overlaps with the second electrode, and a channel area of the active layer is between the first portion of the active layer and the second portion of the active layer, and the channel area includes a first channel portion disposed along a side surface of the insulation pattern, and a second channel portion disposed on a portion of the upper surface of the insulation pattern, the second channel portion extending from an edge of the second electrode to the first channel portion.

公开(公告)号：US20200052085A1

公开(公告)日：2020-02-13

申请号：US16538587

申请日：2019-08-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee PARK ,  InTak CHO ,  DaeHwan KIM ,  JuHeyuck BAECK ,  Jiyong NOH

IPC: H01L29/49 ,  G11C19/28 ,  H01L27/12 ,  G09G3/3225

Abstract: A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.