公开(公告)号：US20240107827A1

公开(公告)日：2024-03-28

申请号：US18236245

申请日：2023-08-21

Applicant: LG Display Co., Ltd.

Inventor： JeeHo PARK ,  Sohyung LEE ,  JungHyun LEE

IPC: H10K59/126 ,  H10K59/121 ,  H10K59/123 ,  H10K59/124

CPC classification number: H10K59/126 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/123 ,  H10K59/124 ,  H10K2102/351

Abstract: Aspects of the present disclosure are directed to displayed devices wherein the characteristics of the transistor(s) may be maintained. In one aspect, a display panel includes a substrate; a first active layer on the substrate and including a channel, a first region positioned at a first side of the channel, and a second region positioned at a second side of the channel; a gate insulating film on the first active layer; a first electrode on the gate insulating film and electrically connected to the first region; a second electrode on the gate insulating film and electrically connected to the second region; a first insulating film on the gate insulating film and including a first hole overlapping at least a portion of the channel; and a third electrode overlapping the first hole.

公开(公告)号：US20180374956A1

公开(公告)日：2018-12-27

申请号：US16019294

申请日：2018-06-26

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/32 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1335 ,  H01L27/12 ,  H01L29/66

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.