公开(公告)号：US20230165047A1

公开(公告)日：2023-05-25

申请号：US18151849

申请日：2023-01-09

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  Sohyung LEE

IPC: H10K59/12 ,  H01L29/786

CPC classification number: H10K59/12 ,  H01L29/78618 ,  H01L29/7869

Abstract: Disclosed is a display apparatus including a first thin film transistor (TFT) and a second thin film transistor having a bottom gate structure and including an oxide semiconductor layer. The first TFT may be used as a switching device and the second TFT may be used as a driving device, and these TFTs have different operation properties from each other. One or more embodiments of the present disclosure provides a method of arranging a plurality of TFTs having different properties in a display apparatus. This not only provides a display apparatus with TFTs integrated at a high density but also an efficient way of driving the display apparatus.

公开(公告)号：US20230077265A1

公开(公告)日：2023-03-09

申请号：US17901534

申请日：2022-09-01

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/66 ,  H01L29/24

Abstract: A thin film transistor, a fabricating method of the thin film transistor and a display device comprising the thin film transistor are provided. The thin film transistor comprises an active layer and a gate electrode spaced apart from the active layer and at least partially overlapped with the active layer, wherein the active layer includes a first active layer and a second active layer, which overlap each other, the first active layer includes copper, and the second active layer has mobility higher than that of the first active layer.

公开(公告)号：US20210143279A1

公开(公告)日：2021-05-13

申请号：US17154852

申请日：2021-01-21

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20250089301A1

公开(公告)日：2025-03-13

申请号：US18955048

申请日：2024-11-21

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  H10K59/122 ,  H10K59/38

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20180374956A1

公开(公告)日：2018-12-27

申请号：US16019294

申请日：2018-06-26

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/32 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1335 ,  H01L27/12 ,  H01L29/66

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20250040192A1

公开(公告)日：2025-01-30

申请号：US18918548

申请日：2024-10-17

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20210183968A1

公开(公告)日：2021-06-17

申请号：US17116800

申请日：2020-12-09

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  Sohyung LEE

IPC: H01L27/32 ,  H01L29/786

Abstract: Disclosed is a display apparatus including a first thin film transistor (TFT) and a second thin film transistor having a bottom gate structure and including an oxide semiconductor layer. The first TFT may be used as a switching device and the second TFT may be used as a driving device, and these TFTs have different operation properties from each other. One or more embodiments of the present disclosure provides a method of arranging a plurality of TFTs having different properties in a display apparatus. This not only provides a display apparatus with TFTs integrated at a high density but also an efficient way of driving the display apparatus.

公开(公告)号：US20180350995A1

公开(公告)日：2018-12-06

申请号：US15994765

申请日：2018-05-31

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20230420572A1

公开(公告)日：2023-12-28

申请号：US18465703

申请日：2023-09-12

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/78696 ,  H01L29/66969 ,  H01L29/41733 ,  G09G2310/08 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20220344512A1

公开(公告)日：2022-10-27

申请号：US17859946

申请日：2022-07-07

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.