公开(公告)号：US20250048848A1

公开(公告)日：2025-02-06

申请号：US18792178

申请日：2024-08-01

Applicant: LG Display Co., Ltd.

Inventor： Hoseung LEE ,  JongWon LEE ,  YoungWook LEE ,  HeeJung YANG ,  GiSang HONG ,  SungKi KIM

IPC: H10K59/122 ,  H10K59/80

Abstract: A display panel can include a plurality of subpixels disposed on a substrate, an insulating layer disposed on the substrate, the insulating layer including at least one recess portion in at least one subpixel among the plurality of subpixels, an anode electrode disposed on the insulating layer, the anode electrode not overlapping the recess portion, a bank disposed on a portion of an upper surface of the anode electrode and the insulating layer, the bank having an opening in each of the plurality of subpixels, a light emitting layer disposed in the opening, and a cathode electrode disposed on the light emitting layer. Also, each of the light emitting layer and the cathode electrode overlaps with the anode electrode and the recess portion of the insulating layer in the opening, and the cathode electrode has at least one stepped portion in the opening of the bank.

公开(公告)号：US20190123149A1

公开(公告)日：2019-04-25

申请号：US16058156

申请日：2018-08-08

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  Seoyeon IM ,  Kwon-Shik PARK ,  SungKi KIM

IPC: H01L29/267 ,  H01L29/786 ,  H01L29/24 ,  H01L29/778 ,  H01L27/12

CPC classification number: H01L29/267 ,  G02F1/133305 ,  G02F1/1368 ,  H01L27/1225 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7781 ,  H01L29/7786 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869 ,  H01L51/0097

Abstract: The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.

公开(公告)号：US20240260418A1

公开(公告)日：2024-08-01

申请号：US18510280

申请日：2023-11-15

Applicant: LG Display Co., Ltd.

Inventor： SungKi KIM ,  GiSang HONG ,  JongWon LEE ,  YoungWook LEE ,  Jungmin KIM ,  Hoseung LEE

IPC: H10K59/80 ,  H10K59/122 ,  H10K59/38

CPC classification number: H10K59/878 ,  H10K59/122 ,  H10K59/38 ,  H10K59/351 ,  H10K2102/3023

Abstract: Embodiments of the disclosure relate to a display device. Specifically, there may be provided a display device in which the planarization layer includes a convex portion, an inclined surface, and a slit portion to effectively extract the light from the display device to the outside to provide enhanced light efficiency, and the lower protection metal is disposed not to overlap the inclined surface to mitigate deterioration of luminance in the direction of the side viewing angle.

公开(公告)号：US20240130166A1

公开(公告)日：2024-04-18

申请号：US18484157

申请日：2023-10-10

Applicant: LG Display Co., Ltd.

Inventor： GiSang HONG ,  SungKi KIM ,  JongWon LEE ,  YoungWook LEE ,  Jungmin KIM ,  Hoseung LEE

IPC: H10K59/122 ,  H10K59/80

CPC classification number: H10K59/122 ,  H10K59/8792

Abstract: Embodiments of the disclosure relate to a display device. Specifically, there may be provided a display device that comprises a substrate having a plurality of subpixels and an overcoat layer disposed on the substrate, wherein the overcoat layer includes a recess disposed between the subpixels, and wherein a transparent inorganic bank layer and an opaque bank layer are disposed in the recess, thereby preventing outgassing or hydrogen migration, enhancing side light extraction efficiency, reducing or minimizing reflection by external light even without providing a polarizing plate, preventing deterioration of visibility and contrast ratio, and enhancing luminance.

公开(公告)号：US20230082560A1

公开(公告)日：2023-03-16

申请号：US17873575

申请日：2022-07-26

Applicant: LG DISPLAY CO., LTD.

Inventor： Jungcheol SHIN ,  SungKi KIM ,  GiSang HONG ,  YoungWook LEE

IPC: H01L33/56 ,  H01L33/62

Abstract: A display device includes a transistor disposed over a substrate, a planarization layer disposed over the transistor, a light-emitting element disposed over the planarization layer; and a plurality of insulating layers disposed between the substrate and the light-emitting element, and at least one of the planarization layer and the plurality of insulating layers is a hydrogen blocking layer doped with a hydrogen capture material.

公开(公告)号：US20200185531A1

公开(公告)日：2020-06-11

申请号：US16790591

申请日：2020-02-13

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1335

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20190140101A1

公开(公告)日：2019-05-09

申请号：US16058737

申请日：2018-08-08

Applicant: LG Display Co., Ltd.

Inventor： Seoyeon IM ,  HeeSung LEE ,  SeungJin KIM ,  SungKi KIM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  H01L21/385

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes an oxide semiconductor layer disposed on a substrate, a gate electrode disposed so as to overlap at least a portion of the oxide semiconductor layer and isolated from the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer and spaced apart from the source electrode, wherein the oxide semiconductor layer includes a first sub layer disposed on the substrate, a second sub layer disposed on the first sub layer, and a third sub layer disposed on the second sub layer, the second sub layer has larger resistance than the first sub layer and the third sub layer and lower carrier concentration than the first sub layer and the third sub layer, the first sub layer has higher hydrogen concentration than the second sub layer and the third sub layer, and each of the first sub layer and the second sub layer has crystallinity.

公开(公告)号：US20130143464A1

公开(公告)日：2013-06-06

申请号：US13685558

申请日：2012-11-26

Applicant: LG Display Co., Ltd.

Inventor： KiYong KIM ,  JaeKyun LEE ,  JaeYoung OH ,  YongSu AN ,  SungKi KIM ,  JaeWon LEE ,  Dongkyu LEE

IPC: G02F1/1335

CPC classification number: G02F1/133514 ,  G02F1/1303 ,  G02F1/133351

Abstract: In a method for fabricating a lightweight and thin liquid crystal display (LCD), a first mother substrate, a subsidiary substrate and a thin second mother substrate are provided. An edge cut is formed by cutting edges of the first and second mother substrates and the subsidiary substrate to be inclined at a predetermined angle. An array process is performed on the first mother substrate. The subsidiary substrate is attached to the second mother substrate. A color filter process is performed on the second mother substrate having the subsidiary substrate attached thereto. The first and second mother substrates are attached together. The subsidiary substrate is separated from the first and second substrates by spraying air between the second mother substrate and the subsidiary substrate, in which the edge cut is formed.

Abstract translation: 在制造轻量级薄型液晶显示器（LCD）的方法中，提供第一母基板，辅助基板和薄的第二母基片。 通过切割第一母基板和第二母基板的辅助基板的边缘以预定的角度倾斜来形成边缘切割。 在第一母基板上进行阵列处理。 辅助基板附接到第二母基板。 在附着有辅助基板的第二母基板上进行滤色器处理。 第一和第二母基片连接在一起。 通过在形成边缘切割的第二母体基板和辅助基板之间喷射空气，将辅助基板与第一和第二基板分离。

公开(公告)号：US20250089301A1

公开(公告)日：2025-03-13

申请号：US18955048

申请日：2024-11-21

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  H10K59/122 ,  H10K59/38

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20240155922A1

公开(公告)日：2024-05-09

申请号：US18484162

申请日：2023-10-10

Applicant: LG Display Co., Ltd.

Inventor： GiSang HONG ,  SungKi KIM ,  JongWon LEE ,  YoungWook LEE ,  Jungmin KIM ,  Hoseung LEE

IPC: H10K59/80 ,  G09G3/3233 ,  H10K59/122 ,  H10K59/131 ,  H10K59/88

CPC classification number: H10K59/878 ,  G09G3/3233 ,  H10K59/122 ,  H10K59/131 ,  H10K59/88 ,  G09G2300/0842

Abstract: Embodiments of the disclosure relate to a display device. Specifically, there may be provided a display device capable of enhancing light extraction efficiency by reducing the distance between the organic light emitting layer and the side reflection layer by comprising a substrate including a plurality of subpixels, an overcoat layer disposed on the substrate and having a recess positioned between the subpixels, a first electrode disposed to cover an upper surface of the overcoat layer and an inclined surface of the recess and including a transparent conductive material, a reflection layer disposed on the first electrode on the inclined surface of the recess and including a metal or metal alloy, and a bank layer positioned in the recess and disposed on the reflection layer.