公开(公告)号：US20240204110A1

公开(公告)日：2024-06-20

申请号：US18242987

申请日：2023-09-06

Applicant: LG Display Co., Ltd.

Inventor： HyunCheol CHO ,  JeeHo PARK

IPC: H01L29/786

CPC classification number: H01L29/78696 ,  H01L29/7869 ,  H10K59/12

Abstract: A thin film transistor, and a display apparatus including the thin film transistor are discussed. The thin film transistor includes an active layer and a gate electrode spaced apart from the active layer and overlapping at least part of the active layer. The active layer includes a first oxide semiconductor layer and a second semiconductor layer in contact with the first oxide semiconductor layer and having a lower mobility than that of the first oxide semiconductor layer, and a contact part, which is the part where the first oxide semiconductor layer and the second oxide semiconductor layer are in contact with each other, overlaps the gate electrode.

公开(公告)号：US20210143279A1

公开(公告)日：2021-05-13

申请号：US17154852

申请日：2021-01-21

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20250040192A1

公开(公告)日：2025-01-30

申请号：US18918548

申请日：2024-10-17

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  G09G3/3266 ,  G09G3/3291 ,  H01L27/12 ,  H01L29/24 ,  H01L29/417 ,  H01L29/66

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20180350995A1

公开(公告)日：2018-12-06

申请号：US15994765

申请日：2018-05-31

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20240234430A9

公开(公告)日：2024-07-11

申请号：US18378541

申请日：2023-10-10

Applicant: LG Display Co., Ltd.

Inventor： JeeHo PARK ,  Sohyung LEE ,  Hyunki KIM

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/1213

Abstract: A thin film transistor can include an active layer; a gate electrode at least partially overlapping with the active layer; and a source electrode and a drain electrode spaced apart from each other and connected to the active layer, respectively. Also, the active layer includes a channel overlapping with the gate electrode; a first connection portion connected to a first side of the channel portion; and a second connection portion connected to a second side of the channel portion. Also, the channel has a crystalline structure, the first connection portion includes a first amorphous portion contacting the channel, and the second connection portion includes a second amorphous portion contacting the channel.

公开(公告)号：US20230420572A1

公开(公告)日：2023-12-28

申请号：US18465703

申请日：2023-09-12

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/78696 ,  H01L29/66969 ,  H01L29/41733 ,  G09G2310/08 ,  G09G3/3291

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20220344512A1

公开(公告)日：2022-10-27

申请号：US17859946

申请日：2022-07-07

Applicant: LG Display Co., Ltd.

Inventor： SeungJin KIM ,  HeeSung LEE ,  Sohyung LEE ,  MinCheol KIM ,  JeongSuk YANG ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24 ,  G09G3/3266 ,  H01L29/66 ,  H01L29/417

Abstract: Disclosed are a thin film transistor (TFT) including an oxide semiconductor layer capable of being applied to high-resolution flat panel display devices requiring high-speed driving, a gate driver including the TFT, and a display device including the gate driver. The TFT includes first oxide semiconductor layer consisting of indium-gallium-zinc-tin oxide (IGZTO) and a second oxide semiconductor layer including indium-gallium-zinc oxide (IGZO). A content ratio (Ga/In) of gallium (Ga) to indium (In) of the second oxide semiconductor layer is higher than a content (Ga/In) of Ga to In of the first oxide semiconductor layer, and a content ratio (Zn/In) of zinc (Zn) to In of the second oxide semiconductor layer is higher than a content (Zn/In) of Zn to In of the first oxide semiconductor layer.

公开(公告)号：US20200185531A1

公开(公告)日：2020-06-11

申请号：US16790591

申请日：2020-02-13

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/32 ,  H01L27/12 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1335

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20250089301A1

公开(公告)日：2025-03-13

申请号：US18955048

申请日：2024-11-21

Applicant: LG Display Co., Ltd.

Inventor： HeeSung LEE ,  SungKi KIM ,  MinCheol KIM ,  SeungJin KIM ,  JeeHo PARK ,  Seoyeon IM

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66 ,  H10K59/121 ,  H10K59/122 ,  H10K59/38

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US20240136362A1

公开(公告)日：2024-04-25

申请号：US18378541

申请日：2023-10-09

Applicant: LG Display Co., Ltd.

Inventor： JeeHo PARK ,  Sohyung LEE ,  Hyunki KIM

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78696 ,  H10K59/1213

Abstract: A thin film transistor can include an active layer; a gate electrode at least partially overlapping with the active layer; and a source electrode and a drain electrode spaced apart from each other and connected to the active layer, respectively. Also, the active layer includes a channel overlapping with the gate electrode; a first connection portion connected to a first side of the channel portion; and a second connection portion connected to a second side of the channel portion. Also, the channel has a crystalline structure, the first connection portion includes a first amorphous portion contacting the channel, and the second connection portion includes a second amorphous portion contacting the channel.