公开(公告)号：US11094793B2

公开(公告)日：2021-08-17

申请号：US16538587

申请日：2019-08-12

Applicant: LG Display Co., Ltd.

Inventor： SeHee Park ,  InTak Cho ,  DaeHwan Kim ,  JuHeyuck Baeck ,  Jiyong Noh

IPC: H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  G09G3/3266 ,  G11C19/28 ,  G09G3/3225 ,  G09G3/3233

Abstract: A thin film transistor substrate can include a first buffer layer disposed on a base substrate; a second buffer layer disposed on the first buffer layer; a semiconductor layer disposed on the second buffer layer; and a gate electrode spaced apart from the semiconductor layer, at least a part of the gate electrode overlapping with the semiconductor layer, in which a surface oxygen concentration of the first buffer layer is higher than a surface oxygen concentration of the second buffer layer.

公开(公告)号：US11069814B2

公开(公告)日：2021-07-20

申请号：US16575077

申请日：2019-09-18

Applicant: LG DISPLAY CO., LTD.

Inventor： SangYun Sung ,  SeHee Park ,  Jiyong Noh ,  InTak Cho ,  PilSang Yun

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49

Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active layer, and a second electrode disposed on the second insulating film, the second electrode being electrically connected to the third portion of the active layer.

公开(公告)号：US11063103B2

公开(公告)日：2021-07-13

申请号：US16666869

申请日：2019-10-29

Applicant: LG Display Co., Ltd.

Inventor： JungSeok Seo ,  PilSang Yun ,  SeHee Park ,  Jiyong Noh

IPC: H01L27/32 ,  H01L27/12

Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

公开(公告)号：US10741697B2

公开(公告)日：2020-08-11

申请号：US16211151

申请日：2018-12-05

Applicant: LG Display Co., Ltd.

Inventor： Jiyong Noh ,  Jaeman Jang ,  JuHeyuck Baeck ,  PilSang Yun

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/38 ,  G02F1/1368 ,  H01L27/32

Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer on a substrate, a gate electrode insulated from the oxide semiconductor layer to overlap at least a portion of the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode spaced apart from the source electrode and connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first oxide semiconductor layer on the substrate and a second oxide semiconductor layer on the first oxide semiconductor layer, the first oxide semiconductor layer includes nitrogen of 1 at % to 5 at % concentration with respect to number of atoms, and the second oxide semiconductor layer has a nitrogen concentration which is lower than a nitrogen concentration of the first oxide semiconductor layer and a gradient of the nitrogen concentration such that the nitrogen concentration is lowered in a direction closer to the gate electrode.