ORGANIC LIGHT-EMITTING DISPLAY DEVICE
    11.
    发明申请

    公开(公告)号:US20180166015A1

    公开(公告)日:2018-06-14

    申请号:US15837286

    申请日:2017-12-11

    Abstract: Disclosed is an organic light-emitting display device capable of realizing a high resolution. The organic light-emitting display device includes a storage capacitor disposed on a substrate, which overlaps at least one transistor, with at least one buffer layer interposed therebetween, the at least one buffer layer disposed on the storage capacitor, and which includes a lower storage electrode and an upper storage electrode overlapping the lower storage electrode, with a storage buffer layer interposed therebetween, and a light-emitting diode connected to the transistor. One of the lower storage electrode and the upper storage electrode is formed to have the same line width and the same shape as the storage buffer layer, thereby ensuring a sufficient process margin and consequently realizing a high resolution and improving production yield.

    Display device
    12.
    发明授权

    公开(公告)号:US10777620B2

    公开(公告)日:2020-09-15

    申请号:US15991900

    申请日:2018-05-29

    Abstract: A thin and lightweight display device is disclosed. An organic light-emitting display device having a touch sensor is configured such that an outer planarization layer fills a space between a plurality of dams, thereby preventing a short circuit between routing lines in the space between the dams, and such that touch electrodes are disposed on an encapsulation structure for encapsulating a light-emitting element, with the result that an additional bonding process is not required, whereby the process is simplified and cost is reduced.

    Substrate for display device and display device including the same

    公开(公告)号:US10431599B2

    公开(公告)日:2019-10-01

    申请号:US15833803

    申请日:2017-12-06

    Abstract: A substrate for a display device and a display device including the same are disclosed. The substrate includes a first thin-film transistor including an oxide semiconductor layer, a second thin-film transistor spaced apart from the first thin-film transistor and including a polycrystalline semiconductor layer, and a storage capacitor including at least two storage electrodes. One of the at least two storage electrodes is located in the same layer and is formed of the same material as a gate electrode of the second thin-film transistor that is disposed under the polycrystalline semiconductor layer, and another one of the at least two storage electrodes is located above the polycrystalline semiconductor layer with at least one insulation film interposed therebetween. Accordingly, lower power consumption and a larger area of the substrate are realized.

    Substrate for display device and display device including the same

    公开(公告)号:US10714557B2

    公开(公告)日:2020-07-14

    申请号:US16409718

    申请日:2019-05-10

    Abstract: A substrate for a display device and a display device including the same are disclosed. The substrate includes a first thin-film transistor including an oxide semiconductor layer, a second thin-film transistor spaced apart from the first thin-film transistor and including a polycrystalline semiconductor layer, and a storage capacitor including at least two storage electrodes. One of the at least two storage electrodes is located in the same plane and is formed of the same material as gate electrodes of the first thin-film transistor and the second thin-film transistor, and another one of the at least two storage electrodes is located in the same plane and is formed of the same material as source and drain electrodes of the first thin-film transistor and the second thin-film transistor. Accordingly, lower power consumption and a larger area of the substrate are realized.

    Substrate for Display Device and Display Device Including the Same

    公开(公告)号:US20180182832A1

    公开(公告)日:2018-06-28

    申请号:US15833803

    申请日:2017-12-06

    Abstract: A substrate for a display device and a display device including the same are disclosed. The substrate includes a first thin-film transistor including an oxide semiconductor layer, a second thin-film transistor spaced apart from the first thin-film transistor and including a polycrystalline semiconductor layer, and a storage capacitor including at least two storage electrodes. One of the at least two storage electrodes is located in the same layer and is formed of the same material as a gate electrode of the second thin-film transistor that is disposed under the polycrystalline semiconductor layer, and another one of the at least two storage electrodes is located above the polycrystalline semiconductor layer with at least one insulation film interposed therebetween. Accordingly, lower power consumption and a larger area of the substrate are realized.

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