公开(公告)号：US10608117B2

公开(公告)日：2020-03-31

申请号：US16019294

申请日：2018-06-26

Applicant: LG Display Co., Ltd.

Inventor： HeeSung Lee ,  SungKi Kim ,  MinCheol Kim ,  SeungJin Kim ,  JeeHo Park ,  Seoyeon Im

IPC: H01L29/786 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/32 ,  H01L29/66 ,  G02F1/1333

Abstract: A thin-film transistor is disclosed. The thin-film transistor includes a gate electrode disposed on a substrate, an oxide semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode connected to the oxide semiconductor layer in the state of being spaced apart from the source electrode, wherein the oxide semiconductor layer includes indium (In), gallium (Ga), zinc (Zn), tin (Sn), and oxygen (O), the content of indium (In) in the oxide semiconductor layer is greater than the content of gallium (Ga), the content of indium (In) is substantially equal to the content of zinc (Zn), and the content ratio (Sn/In) of tin (Sn) to indium (In) is 0.1 to 0.25.

公开(公告)号：US10388739B2

公开(公告)日：2019-08-20

申请号：US16058156

申请日：2018-08-08

Applicant: LG Display Co., Ltd.

Inventor： HeeSung Lee ,  Seoyeon Im ,  Kwon-Shik Park ,  SungKi Kim

IPC: H01L29/10 ,  H01L29/267 ,  H01L29/786 ,  H01L29/24 ,  H01L29/778 ,  H01L27/12 ,  G02F1/1333 ,  H01L27/32 ,  H01L51/00 ,  G02F1/1368

Abstract: The present disclosure relates to a thin-film transistor including two-dimensional semiconductor and display apparatus including the same. The thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer disposed so as to overlap at least a portion of the gate electrode in the state of being isolated from the gate electrode, a gate insulation film disposed between the gate electrode and the semiconductor layer, a source electrode connected to the semiconductor layer, and a drain electrode connected to the semiconductor layer in the state of being spaced apart from the source electrode, wherein the semiconductor layer includes a first layer including an oxide semiconductor and a second layer disposed so as to overlap the first layer in a plane view, the second layer comprising a two-dimensional semiconductor, and an energy band gap of the first layer is larger than an energy band gap of the second layer.