公开(公告)号：US20230257298A1

公开(公告)日：2023-08-17

申请号：US18001847

申请日：2020-06-15

Applicant: LG ELECTRONICS INC.

Inventor： Soongil KIM ,  Hongcheol LEE ,  Hongjung KIM ,  Jongdeok KIM

IPC: C03C8/14 ,  H05B6/10 ,  C01G51/00 ,  C03C4/00

CPC classification number: C03C8/14 ,  H05B6/105 ,  C01G51/40 ,  C03C4/00 ,  C01P2002/54 ,  C01P2006/42 ,  C01P2002/60 ,  C01P2004/62 ,  C01P2004/61 ,  C01P2004/32 ,  C01P2004/10 ,  C01P2004/03 ,  C03C2204/00 ,  C03C2205/00

Abstract: The present disclosure relates to a magnetic heating element, an induction heating-type adhesive including the same, and a method of preparing the magnetic heating element. The magnetic heating element according to an embodiment of the present disclosure has a composition with an atomic ratio represented by the following formula, (Ma1-x-yMbxFey)1Fe2-zMczO4, wherein: Ma is cobalt (Co), Mb is one or more of zinc (Zn), Copper (Cu), Manganese (Mn), and Magnesium (Mg), and Mc is one or more of samarium (Sm), yttrium (Y), cerium (Ce), europium (Eu), neodymium (Nd), and dysprosium (Dy); 0.01≤x

公开(公告)号：US20170207351A1

公开(公告)日：2017-07-20

申请号：US15408903

申请日：2017-01-18

Applicant: LG ELECTRONICS INC.

Inventor： Seungyoon LEE ,  Kwangsun JI ,  Hongcheol LEE ,  Sunghyun HWANG

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/02

CPC classification number: H01L31/02168 ,  H01L31/02008 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/022466 ,  H01L31/0747 ,  Y02E10/50

Abstract: A solar cell is disclosed, which includes a crystalline semiconductor substrate of a first conductive type, a front doped layer on a front surface of the semiconductor substrate and forming a hetero junction with the semiconductor substrate, a back doped layer on a back surface of the semiconductor substrate and forming a hetero junction with the semiconductor substrate, a front transparent conductive layer on the front doped layer, a back transparent conductive layer under the back doped layer. One of the front doped layer and the back doped layer has a second conductive type opposite to the first conductive type to form a p-n junction with the semiconductor substrate, and the other of the front doped layer and the back doped layer has the first conductive type. A planar area of the front transparent conductive layer is larger than a planar area of the back transparent conductive layer.