公开(公告)号：US10368417B2

公开(公告)日：2019-07-30

申请号：US15740179

申请日：2016-07-05

Applicant: LG ELECTRONICS INC.

Inventor： Seonock Kim ,  Hwankuk Yuh

IPC: H01L33/10 ,  H05B33/10 ,  F21K99/00 ,  H05B33/14 ,  H05B37/02 ,  F21K9/90 ,  H01L33/24 ,  H01L33/38 ,  H05B33/26 ,  H01L25/075

Abstract: The present invention relates to a display device and, particularly, to a display device using a semiconductor light-emitting device. The display device according to the present invention comprises a semiconductor light-emitting device, and the semiconductor light-emitting device comprises: a first conductive semiconductor layer; a second conductive semiconductor layer having a lateral surface, and overlapped with the first conductive semiconductor layer; a first conductive electrode electrically connected to the first conductive semiconductor layer; and a second conductive electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer has an inclined part inclined with respect to the lateral surface, and the second conductive electrode is formed so as to cover the inclined part.

公开(公告)号：US09620681B2

公开(公告)日：2017-04-11

申请号：US14830508

申请日：2015-08-19

Applicant: LG Electronics Inc.

Inventor： Hwankuk Yuh

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/20 ,  H01L29/40 ,  H01L33/42

CPC classification number: H01L33/385 ,  H01L24/03 ,  H01L25/0753 ,  H01L29/40 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/03001 ,  H01L2933/0016

Abstract: A semiconductor device including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer which are sequentially stacked; a first conductivity type upper electrode portion and a first conductivity type lower electrode portion disposed to correspond to each other with the first conductivity type semiconductor layer interposed therebetween; a second conductivity type upper electrode portion and a second conductivity type lower electrode portion disposed to correspond to each other with the first and second conductivity type semiconductor layers interposed therebetween; and a second conductivity type electrode connection portion electrically connecting the second conductivity type upper electrode portion and the second conductivity type lower electrode portion.