公开(公告)号：US09312420B2

公开(公告)日：2016-04-12

申请号：US13767748

申请日：2013-02-14

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil Jin ,  Heejin Nam ,  Sangwook Park

IPC: H01L31/0216 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/02168 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1868 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell according to an embodiment of the invention includes a semiconductor substrate; an emitter layer formed at the semiconductor substrate, wherein the emitter layer includes a first portion of a first resistance and a second portion of a second resistance higher than the first resistance, wherein the first portion includes a first dopant and a second dopant having the same conductive type and the second portion including the second dopant; a passivation layer formed on the emitter layer, wherein the passivation layer includes the first dopant; and an electrode electrically connected to the first portion through the passivation layer.

Abstract translation: 根据本发明的实施例的太阳能电池包括半导体衬底; 形成在所述半导体衬底处的发射极层，其中所述发射极层包括第一电阻的第一部分和比所述第一电阻高的第二电阻的第二部分，其中所述第一部分包括第一掺杂剂和具有所述第一掺杂剂的第二掺杂剂 导电型，第二部分包括第二掺杂剂; 形成在所述发射极层上的钝化层，其中所述钝化层包括所述第一掺杂剂; 以及通过钝化层电连接到第一部分的电极。

公开(公告)号：US11335819B2

公开(公告)日：2022-05-17

申请号：US15066812

申请日：2016-03-10

Applicant: LG Electronics Inc.

Inventor： Yoonsil Jin ,  Heejin Nam ,  Sangwook Park

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18 ,  H01L31/0216

Abstract: A method for manufacturing a solar cell according to an embodiment of the invention includes forming an emitter layer having an emitter dopant of a second conductive type opposite to a first conductive type on a first surface on a semiconductor substrate; forming a passivation layer including a first dopant of the first conductive type on a second surface of the semiconductor substrate; forming a back surface field layer including a first portion on the second surface by locally heating a portion of the passivation layer using a laser; and forming an electrode electrically connected to the first portion of the back surface field layer through an opening of the passivation layer after the first portion of the back surface field layer is formed on the second surface, wherein the back surface field layer is locally formed between the electrode and the second surface.

公开(公告)号：US11251319B2

公开(公告)日：2022-02-15

申请号：US16196742

申请日：2018-11-20

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil Jin ,  Youngho Choe

IPC: H01L31/0224 ,  H01L31/0352 ,  H01L31/068 ,  H01L31/18

Abstract: A method for fabricating a solar cell, includes forming an emitter layer by doping a first impurity having a second conductivity type, opposite a first conductivity type, on a front surface of a substrate having the first conductivity type; forming a back surface field by doping a second impurity having the first conductivity type on a rear surface of the substrate; and forming a plurality of front finger lines in contact with the emitter layer and a plurality of rear finger lines in contact with the back surface field, wherein the emitter layer has a selective emitter structure, the back surface field has a selective back surface field structure, and the number of the plurality of rear finger lines positioned on the rear surface of the substrate is different from the number of the plurality of front finger lines positioned on a front surface of the substrate.

公开(公告)号：US10573767B2

公开(公告)日：2020-02-25

申请号：US13894833

申请日：2013-05-15

Applicant: LG Electronics Inc.

Inventor： Heejin Nam ,  Yoonsil Jin ,  Sangwook Park

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/18

Abstract: A solar cell includes a substrate containing impurities of a first conductive type, an emitter region which is positioned at a first surface of the substrate and contains impurities of a second conductive type opposite the first conductive type to form a p-n junction along with the substrate, an anti-reflection layer positioned on the emitter region, a first electrode which is positioned on the anti-reflection layer and is coupled to the emitter region, and a second electrode which is positioned on a second surface of the substrate and is coupled to the substrate. A first area of the anti-reflection layer, which is positioned under the first electrode, has a plurality of openings. The first electrode couples to the emitter region exposed through the plurality of openings.

公开(公告)号：US09577138B2

公开(公告)日：2017-02-21

申请号：US14841159

申请日：2015-08-31

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil Jin ,  Hyunjung Park ,  Youngho Choe ,  Changseo Park

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/0352

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/035272 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

Abstract translation: 太阳能电池被形成为具有第一导电类型的硅半导体衬底; 具有与第一导电类型相反并形成在硅半导体衬底的第一表面上的第二导电类型的发射极层; 具有第一导电类型并形成在与第一表面相对的硅半导体衬底的第二表面上的背表面场层; 并且其中所述发射极层包括至少第一浅掺杂区域，并且所述背表面场层包括至少第二浅掺杂区域，并且其中所述发射极层的所述第一浅掺杂区域的厚度不同于所述第二浅掺杂区域的厚度 背面场层的浅掺杂区域。

公开(公告)号：US09076905B2

公开(公告)日：2015-07-07

申请号：US14041907

申请日：2013-12-18

Applicant: LG ELECTRONICS INC.

Inventor： Yoonsil Jin ,  Goohwan Shim ,  Youngho Choe ,  Changseo Park

IPC: H01L21/00 ,  H01L31/0236 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/02366 ,  H01L31/02168 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.

Abstract translation: 半导体器件包括衬底和第一绝缘层。 第一绝缘层包括第一下层和第一下层上的第一上层。 第一绝缘层具有穿过第一下层和第一上层的第一开口。 第一下层的第一开口的最大宽度不同于第一上层的第一开口的最大宽度。