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1.
公开(公告)号:US12033989B2
公开(公告)日:2024-07-09
申请号:US17558309
申请日:2021-12-21
申请人: LG ELECTRONICS INC.
发明人: Juchan Choi , Changseo Park , Bongchu Shim , Kiseong Jeon
IPC分类号: H01L25/075 , H01L25/16
CPC分类号: H01L25/0753 , H01L25/167 , H01L2224/95085
摘要: Discussed is a display device, including a substrate having an assembly region and a non-assembly region, semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from each of the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes disposed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, a dielectric layer disposed on the pair electrodes, and bus electrodes electrically connected to the pair electrodes, wherein the pair electrodes are arranged in parallel to each other along a direction in the assembly region, and wherein the bus electrodes are disposed in the non-assembly region.
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2.
公开(公告)号:US11239215B2
公开(公告)日:2022-02-01
申请号:US16598741
申请日:2019-10-10
申请人: LG ELECTRONICS INC.
发明人: Juchan Choi , Changseo Park , Bongchu Shim , Kiseong Jeon
IPC分类号: H01L25/075 , H01L25/16
摘要: The present disclosure provides a display device, including a substrate, a plurality of semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes formed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, and a dielectric layer formed to cover the pair electrodes, wherein the plurality of pair electrodes are arranged in parallel to each other along a direction.
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公开(公告)号:US10243090B2
公开(公告)日:2019-03-26
申请号:US14734870
申请日:2015-06-09
申请人: LG ELECTRONICS INC.
发明人: Youngsung Yang , Junghoon Choi , Changseo Park , Hyungjin Kwon
IPC分类号: H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0745
摘要: Discussed is a method for manufacturing a solar cell. The method includes forming a tunneling layer on a semiconductor substrate; forming a semiconductor layer on the tunneling layer, wherein the forming of the semiconductor layer including depositing a semiconductor material; and forming an electrode connected to the semiconductor layer. The tunneling layer is formed under a temperature higher than room temperature and a pressure lower than atmospheric pressure.
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公开(公告)号:US09269839B2
公开(公告)日:2016-02-23
申请号:US14038159
申请日:2013-09-26
申请人: LG ELECTRONICS INC.
发明人: Hyunho Lee , Kyoungsoo Lee , Changseo Park
IPC分类号: H01L31/044 , H01L31/0216 , H01L31/0224 , H01L31/0368 , H01L31/068
CPC分类号: H01L31/02167 , H01L31/022441 , H01L31/03682 , H01L31/068 , Y02E10/546 , Y02E10/547
摘要: A solar cell is discussed. The solar cell includes a semiconductor substrate, a p-type conductive region formed at the semiconductor substrate and including a p-type impurity, and a passivation film formed on the p-type conductive region and including aluminum oxide. The passivation film has a thickness of 7 to 17 Å.
摘要翻译: 讨论太阳能电池。 太阳能电池包括半导体衬底,形成在半导体衬底处并包含p型杂质的p型导电区域,以及形成在p型导电区域上并包括氧化铝的钝化膜。 钝化膜的厚度为7至17埃。
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5.
公开(公告)号:US12074147B2
公开(公告)日:2024-08-27
申请号:US17833624
申请日:2022-06-06
申请人: LG ELECTRONICS INC.
发明人: Changseo Park , Bongchu Shim
IPC分类号: H01L29/18 , H01L23/00 , H01L25/075 , H01L33/00 , H01L33/62
CPC分类号: H01L25/0753 , H01L24/32 , H01L33/62 , H01L33/0093 , H01L2224/32227 , H01L2933/0066
摘要: Discussed is a display device, including a substrate including a dielectric layer, a plurality of semiconductor light-emitting devices respectively accommodated on the substrate, and a first electrode provided with a plurality of electrode lines arranged on a bottom of the substrate. Each of the first electrode includes a pair of electrode lines spaced from each other on an upper surface of the dielectric layer among the plurality of electrode lines. Each semiconductor light-emitting device is disposed on the pair of electrode lines, and the pair of electrode lines have the same electrical pole.
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公开(公告)号:US11605757B2
公开(公告)日:2023-03-14
申请号:US15751970
申请日:2016-08-22
申请人: LG ELECTRONICS INC.
发明人: Changseo Park , Kiseong Jeon , Jinhong Park , Hwankuk Yuh
IPC分类号: H01L33/08 , H01L25/075 , H01L33/38 , H05B33/10 , H05B33/14 , H05B33/22 , H05K1/11 , H01L33/44 , H01L33/50 , H01L33/62
摘要: The present invention relates to a display device and, in particular, to a display device using a semiconductor light emitting diode. A display device according to the present invention comprises a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting diodes electrically connected to the metal pads through self-assembly. The present invention is characterized in that: the semiconductor light emitting diodes respectively include a conductive semiconductor layer, a conductive electrode formed on one surface of the conductive semiconductor layer, and a passivation layer enclosing the semiconductor light emitting diode and provided with a through hole for exposing the conductive electrode; one end portion of the semiconductor light emitting diodes is divided into a first portion in which the conductive electrode is exposed, and a second portion in which the passivation layer is exposed; and the maximum width of the metal pad is set to a range of the width to twice the width of the second portion.
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公开(公告)号:US09577138B2
公开(公告)日:2017-02-21
申请号:US14841159
申请日:2015-08-31
申请人: LG ELECTRONICS INC.
发明人: Yoonsil Jin , Hyunjung Park , Youngho Choe , Changseo Park
IPC分类号: H01L31/18 , H01L31/068 , H01L31/0224 , H01L31/0352
CPC分类号: H01L31/1804 , H01L31/022425 , H01L31/035272 , H01L31/068 , H01L31/18 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.
摘要翻译: 太阳能电池被形成为具有第一导电类型的硅半导体衬底; 具有与第一导电类型相反并形成在硅半导体衬底的第一表面上的第二导电类型的发射极层; 具有第一导电类型并形成在与第一表面相对的硅半导体衬底的第二表面上的背表面场层; 并且其中所述发射极层包括至少第一浅掺杂区域,并且所述背表面场层包括至少第二浅掺杂区域,并且其中所述发射极层的所述第一浅掺杂区域的厚度不同于所述第二浅掺杂区域的厚度 背面场层的浅掺杂区域。
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公开(公告)号:US09076905B2
公开(公告)日:2015-07-07
申请号:US14041907
申请日:2013-12-18
申请人: LG ELECTRONICS INC.
发明人: Yoonsil Jin , Goohwan Shim , Youngho Choe , Changseo Park
IPC分类号: H01L21/00 , H01L31/0236 , H01L31/0216 , H01L31/0224 , H01L31/068 , H01L31/18
CPC分类号: H01L31/02366 , H01L31/02168 , H01L31/022425 , H01L31/02363 , H01L31/068 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: A semiconductor device includes a substrate and a first insulating layer. The first insulating layer includes a first lower layer and a first upper layer on the first lower layer. The first insulating layer has a first opening through the first lower layer and the first upper layer. A maximum width of the first opening at the first lower layer is different from a maximum width of the first opening at the first upper layer.
摘要翻译: 半导体器件包括衬底和第一绝缘层。 第一绝缘层包括第一下层和第一下层上的第一上层。 第一绝缘层具有穿过第一下层和第一上层的第一开口。 第一下层的第一开口的最大宽度不同于第一上层的第一开口的最大宽度。
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9.
公开(公告)号:US10971654B2
公开(公告)日:2021-04-06
申请号:US16894262
申请日:2020-06-05
申请人: LG ELECTRONICS INC.
发明人: Junghoon Kim , Changseo Park , Bongchu Shim , Byoungkwon Cho , Hyunwoo Cho
摘要: Discussed is a display device, including a semiconductor light emitting device and a substrate having a receiving groove in which the semiconductor light emitting device is accommodated, wherein the semiconductor light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed on an upper portion of the first conductive semiconductor layer, a first conductive electrode disposed on the first conductive semiconductor layer and a second conductive electrode disposed on the second conductive semiconductor layer, and spaced apart from the first conductive electrode along a horizontal direction of the semiconductor light emitting device, wherein the first conductive semiconductor layer has a symmetrical shape with respect to at least one direction of the semiconductor light emitting device so that the first conductive electrode and the second conductive electrode are arranged at preset positions when the semiconductor light emitting device is accommodated into the receiving groove.
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10.
公开(公告)号:US10424685B2
公开(公告)日:2019-09-24
申请号:US15950477
申请日:2018-04-11
申请人: LG ELECTRONICS INC.
发明人: Goohwan Shim , Changseo Park , Philwon Yoon , Yoonsil Jin , Jinsung Kim , Youngho Choe , Jaewon Chang
IPC分类号: H01L31/02 , H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/068
摘要: A method for manufacturing a solar cell includes forming an emitter layer on a first surface of a substrate, forming a back surface field layer on a second surface opposite the first surface of the substrate, forming a first anti-reflection layer on the emitter layer, forming a second anti-reflection layer on the back surface field layer, and forming a plurality of first electrodes each including a first metal seed layer and a first conductive layer on a plurality of first contact regions of the first anti-reflection film and a plurality of second electrodes each including a second metal seed layer and a second conductive layer on a plurality of second contact regions of the second anti-reflection film, the plurality of first contact regions being partially formed at the first anti-reflection layer and each having a first width.
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