Display device using semiconductor light emitting device and method for manufacturing the same

    公开(公告)号:US12033989B2

    公开(公告)日:2024-07-09

    申请号:US17558309

    申请日:2021-12-21

    CPC classification number: H01L25/0753 H01L25/167 H01L2224/95085

    Abstract: Discussed is a display device, including a substrate having an assembly region and a non-assembly region, semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from each of the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes disposed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, a dielectric layer disposed on the pair electrodes, and bus electrodes electrically connected to the pair electrodes, wherein the pair electrodes are arranged in parallel to each other along a direction in the assembly region, and wherein the bus electrodes are disposed in the non-assembly region.

    Display device using semiconductor light emitting device and method for manufacturing the same

    公开(公告)号:US11239215B2

    公开(公告)日:2022-02-01

    申请号:US16598741

    申请日:2019-10-10

    Abstract: The present disclosure provides a display device, including a substrate, a plurality of semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes formed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, and a dielectric layer formed to cover the pair electrodes, wherein the plurality of pair electrodes are arranged in parallel to each other along a direction.

    Display device using semiconductor light emitting device and method for manufacturing the same

    公开(公告)号:US10971654B2

    公开(公告)日:2021-04-06

    申请号:US16894262

    申请日:2020-06-05

    Abstract: Discussed is a display device, including a semiconductor light emitting device and a substrate having a receiving groove in which the semiconductor light emitting device is accommodated, wherein the semiconductor light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed on an upper portion of the first conductive semiconductor layer, a first conductive electrode disposed on the first conductive semiconductor layer and a second conductive electrode disposed on the second conductive semiconductor layer, and spaced apart from the first conductive electrode along a horizontal direction of the semiconductor light emitting device, wherein the first conductive semiconductor layer has a symmetrical shape with respect to at least one direction of the semiconductor light emitting device so that the first conductive electrode and the second conductive electrode are arranged at preset positions when the semiconductor light emitting device is accommodated into the receiving groove.

    Substrate for manufacturing display device and method for manufacturing display device

    公开(公告)号:US12243759B2

    公开(公告)日:2025-03-04

    申请号:US17620432

    申请日:2019-06-24

    Abstract: Discussed in an assembly substrate used in a display manufacturing method for placing semiconductor light-emitting devices to predetermined positions thereof using an electric field and a magnetic field, the assembly substrate including: a base part; a plurality of pair electrodes extending in one direction and disposed in parallel on the base part; a dielectric layer disposed on the base part to cover the plurality of pair electrodes; and partition walls disposed on the dielectric layer and defining cells at predetermined intervals along the one direction of the plurality of pair electrodes so as to overlap portions of the plurality of pair electrodes, and the semiconductor light-emitting devices being placed into the cells, respectively, wherein at least one of a recess portion and a concave and convex portion is formed on an upper surface of each of the partition walls.

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