Display device using semiconductor light emitting device and method for manufacturing the same

    公开(公告)号:US12033989B2

    公开(公告)日:2024-07-09

    申请号:US17558309

    申请日:2021-12-21

    IPC分类号: H01L25/075 H01L25/16

    摘要: Discussed is a display device, including a substrate having an assembly region and a non-assembly region, semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from each of the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes disposed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, a dielectric layer disposed on the pair electrodes, and bus electrodes electrically connected to the pair electrodes, wherein the pair electrodes are arranged in parallel to each other along a direction in the assembly region, and wherein the bus electrodes are disposed in the non-assembly region.

    Display device using semiconductor light emitting device and method for manufacturing the same

    公开(公告)号:US11239215B2

    公开(公告)日:2022-02-01

    申请号:US16598741

    申请日:2019-10-10

    IPC分类号: H01L25/075 H01L25/16

    摘要: The present disclosure provides a display device, including a substrate, a plurality of semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes formed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, and a dielectric layer formed to cover the pair electrodes, wherein the plurality of pair electrodes are arranged in parallel to each other along a direction.

    Display device using semiconductor light emitting diode

    公开(公告)号:US11605757B2

    公开(公告)日:2023-03-14

    申请号:US15751970

    申请日:2016-08-22

    摘要: The present invention relates to a display device and, in particular, to a display device using a semiconductor light emitting diode. A display device according to the present invention comprises a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting diodes electrically connected to the metal pads through self-assembly. The present invention is characterized in that: the semiconductor light emitting diodes respectively include a conductive semiconductor layer, a conductive electrode formed on one surface of the conductive semiconductor layer, and a passivation layer enclosing the semiconductor light emitting diode and provided with a through hole for exposing the conductive electrode; one end portion of the semiconductor light emitting diodes is divided into a first portion in which the conductive electrode is exposed, and a second portion in which the passivation layer is exposed; and the maximum width of the metal pad is set to a range of the width to twice the width of the second portion.

    Solar cell and manufacturing method thereof
    7.
    发明授权
    Solar cell and manufacturing method thereof 有权
    太阳能电池及其制造方法

    公开(公告)号:US09577138B2

    公开(公告)日:2017-02-21

    申请号:US14841159

    申请日:2015-08-31

    摘要: A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

    摘要翻译: 太阳能电池被形成为具有第一导电类型的硅半导体衬底; 具有与第一导电类型相反并形成在硅半导体衬底的第一表面上的第二导电类型的发射极层; 具有第一导电类型并形成在与第一表面相对的硅半导体衬底的第二表面上的背表面场层; 并且其中所述发射极层包括至少第一浅掺杂区域,并且所述背表面场层包括至少第二浅掺杂区域,并且其中所述发射极层的所述第一浅掺杂区域的厚度不同于所述第二浅掺杂区域的厚度 背面场层的浅掺杂区域。

    Display device using semiconductor light emitting device and method for manufacturing the same

    公开(公告)号:US10971654B2

    公开(公告)日:2021-04-06

    申请号:US16894262

    申请日:2020-06-05

    摘要: Discussed is a display device, including a semiconductor light emitting device and a substrate having a receiving groove in which the semiconductor light emitting device is accommodated, wherein the semiconductor light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed on an upper portion of the first conductive semiconductor layer, a first conductive electrode disposed on the first conductive semiconductor layer and a second conductive electrode disposed on the second conductive semiconductor layer, and spaced apart from the first conductive electrode along a horizontal direction of the semiconductor light emitting device, wherein the first conductive semiconductor layer has a symmetrical shape with respect to at least one direction of the semiconductor light emitting device so that the first conductive electrode and the second conductive electrode are arranged at preset positions when the semiconductor light emitting device is accommodated into the receiving groove.