公开(公告)号：US20210305059A1

公开(公告)日：2021-09-30

申请号：US17304174

申请日：2021-06-15

Applicant: Lam Research Corporation

Inventor： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-Tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC: H01L21/3213 ,  H01L21/768

Abstract: Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

公开(公告)号：US11069535B2

公开(公告)日：2021-07-20

申请号：US15929854

申请日：2020-05-26

Applicant: Lam Research Corporation

Inventor： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-Tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC: H01L21/3213 ,  H01L21/768 ,  H01L21/285

Abstract: Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

公开(公告)号：US10731250B2

公开(公告)日：2020-08-04

申请号：US15996925

申请日：2018-06-04

Applicant: Lam Research Corporation

Inventor： Do Young Kim ,  Jeong-Seok Na ,  Chiukin Steven Lai ,  Raashina Humayun ,  Michal Danek

IPC: C23C16/455 ,  C23C16/18 ,  H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  C23C16/54 ,  H01L23/522 ,  C23C16/509 ,  H01L21/285 ,  C23C16/448 ,  C23C16/52

Abstract: In some embodiments, deposition processes for ruthenium (Ru) feature fill include deposition of a thin, protective Ru film under reducing conditions, followed by a Ru fill step under oxidizing conditions. The presence of protective Ru films formed under oxygen-free conditions or with an oxygen-removing operation can enable Ru fill without oxidation of an underlying adhesion layer or metal feature.

公开(公告)号：US10510590B2

公开(公告)日：2019-12-17

申请号：US15948143

申请日：2018-04-09

Applicant: Lam Research Corporation

Inventor： Shruti Vivek Thombare ,  Raashina Humayun ,  Michal Danek ,  Chiukin Steven Lai ,  Joshua Collins ,  Hanna Bamnolker ,  Griffin John Kennedy ,  Gorun Butail ,  Patrick A. van Cleemput

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/285 ,  H01L23/522 ,  H01L27/11582 ,  H01L23/532 ,  H01L27/108 ,  H01L27/11556

Abstract: Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.

公开(公告)号：US20180347041A1

公开(公告)日：2018-12-06

申请号：US15996925

申请日：2018-06-04

Applicant: Lam Research Corporation

Inventor： Do Young Kim ,  Jeong-Seok Na ,  Chiukin Steven Lai ,  Raashina Humayun ,  Michal Danek

IPC: C23C16/455 ,  C23C16/18 ,  H01L21/02 ,  H01L21/768 ,  H01L23/532

Abstract: Provided are deposition processes for ruthenium (Ru) feature fill. In some embodiments, the processes include deposition of a thin, protective Ru film under reducing conditions, followed by a Ru fill step under oxidizing conditions. The presence of protective Ru films formed under oxygen-free conditions or with an oxygen-removing operation can enable Ru fill without oxidation of an underlying adhesion layer or metal feature.

公开(公告)号：US20180240682A1

公开(公告)日：2018-08-23

申请号：US15954509

申请日：2018-04-16

Applicant: Lam Research Corporation

Inventor： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC: H01L21/3213 ,  H01L21/768 ,  H01L21/285

CPC classification number: H01L21/32136 ,  H01L21/28556 ,  H01L21/76877

Abstract: Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein. Methods involve introducing an activation gas at a chamber pressure and/or applying a bias using a bias power selected to preferentially etch the metal at or near the opening of the feature relative to the interior region of the feature. Apparatuses include integrated hardware for performing deposition of metal and atomic layer etching of metal in the same tool and/or without breaking vacuum.

公开(公告)号：US10777453B2

公开(公告)日：2020-09-15

申请号：US16676169

申请日：2019-11-06

Applicant: Lam Research Corporation

Inventor： Shruti Vivek Thombare ,  Raashina Humayun ,  Michal Danek ,  Chiukin Steven Lai ,  Joshua Collins ,  Hanna Bamnolker ,  Griffin John Kennedy ,  Gorun Butail ,  Patrick A. van Cleemput

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/285 ,  H01L23/522 ,  H01L27/11582 ,  H01L23/532 ,  H01L27/108 ,  H01L27/11556

Abstract: Provided herein are low resistance metallization stack structures for logic and memory applications and related methods of fabrication. In some implementations, the methods involve providing a tungsten (W)-containing layer on a substrate; and depositing a molybdenum (Mo)-containing layer on the W-containing layer. In some implementations, the methods involve depositing a Mo-containing layer directly on a dielectric or titanium nitride (TiN) substrate without an intervening W-containing layer.

公开(公告)号：US20200286743A1

公开(公告)日：2020-09-10

申请号：US15929854

申请日：2020-05-26

Applicant: Lam Research Corporation

Inventor： Chiukin Steven Lai ,  Keren Jacobs Kanarik ,  Samantha Tan ,  Anand Chandrashekar ,  Teh-Tien Su ,  Wenbing Yang ,  Michael Wood ,  Michal Danek

IPC: H01L21/3213 ,  H01L21/768

Abstract: Methods of depositing tungsten into high aspect ratio features using a dep-etch-dep process integrating various deposition techniques with alternating pulses of surface modification and removal during etch are provided herein.

公开(公告)号：US10438847B2

公开(公告)日：2019-10-08

申请号：US15592046

申请日：2017-05-10

Applicant: Lam Research Corporation

Inventor： Chiukin Steven Lai ,  Jeong-Seok Na ,  Raashina Humayun ,  Michal Danek ,  Kaihan Abidi Ashtiani

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/18 ,  C23C16/452 ,  C23C16/455 ,  C23C16/505 ,  C23C16/56 ,  H01L21/285 ,  H01L23/532

Abstract: Provided herein are methods of forming conductive cobalt (Co) interconnects and Co features. The methods involve deposition of a thin manganese (Mn)-containing film on a dielectric followed by subsequent deposition of cobalt on the Mn-containing film. The Mn-containing film may be deposited on a silicon-containing dielectric, such as silicon dioxide, and annealed to form a manganese silicate.

公开(公告)号：US10283404B2

公开(公告)日：2019-05-07

申请号：US15474383

申请日：2017-03-30

Applicant: Lam Research Corporation

Inventor： Jeong-Seok Na ,  Megha Rathod ,  Chiukin Steven Lai ,  Raashina Humayun

IPC: H01L21/768 ,  H01L21/02 ,  C23C16/455 ,  C23C16/36 ,  H01L23/522 ,  H01L23/532

Abstract: Provided are methods of forming diffusion barriers and adhesion layers for interconnects such as cobalt (Co) interconnects or ruthenium (Ru) interconnects. The methods involve selective deposition of tungsten carbon nitride (WCN) films on the oxide surfaces of a feature including a Co surface. The selective growth of WCN on oxide allows the contact resistance at an interface such as a Co—Co interface or a Co—Ru interface to be significantly reduced while maintaining good film coverage, adhesion, and/or barrier properties on the sidewall oxide surfaces.