公开(公告)号：US07768033B2

公开(公告)日：2010-08-03

申请号：US12385720

申请日：2009-04-17

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L27/098 ,  H01L27/0744 ,  H01L29/7722 ,  H01L29/8083

摘要： A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.

公开(公告)号：US07759695B2

公开(公告)日：2010-07-20

申请号：US12385717

申请日：2009-04-17

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L27/098 ,  H01L27/0744 ,  H01L29/7722 ,  H01L29/8083

摘要： A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.

摘要翻译： 单芯片公共漏极JFET器件包括漏极，两个栅极和两个源极，使得与其形成两个公共漏极JFET。 由于在单个芯片内合并的两个JFET，其间不需要引线接合连接，因此没有由接合线引起的寄生电感和电阻，因此提高性能并降低封装成本。 单片式公共漏极JFET器件可以应用于降压转换器，升压转换器，反相转换器，开关和两级DC-DC转换器，以提高其性能和效率。 还提供了用于电流感测或比例电流产生的替代单芯片公共漏极JFET器件。

公开(公告)号：US07535032B2

公开(公告)日：2009-05-19

申请号：US11165028

申请日：2005-06-24

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L27/098 ,  H01L27/0744 ,  H01L29/7722 ,  H01L29/8083

摘要： A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.

摘要翻译： 单芯片公共漏极JFET器件包括漏极，两个栅极和两个源极，使得与其形成两个公共漏极JFET。 由于在单个芯片内合并的两个JFET，其间不需要引线接合连接，因此没有由接合线引起的寄生电感和电阻，因此提高性能并降低封装成本。 单片式公共漏极JFET器件可以应用于降压转换器，升压转换器，反相转换器，开关和两级DC-DC转换器，以提高其性能和效率。 还提供了用于电流感测或比例电流产生的替代单芯片公共漏极JFET器件。

公开(公告)号：US20050285158A1

公开(公告)日：2005-12-29

申请号：US11165028

申请日：2005-06-24

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： H01L27/07 ,  H01L27/098 ,  H01L29/772 ,  H01L29/80 ,  H01L29/808

CPC分类号： H01L27/098 ,  H01L27/0744 ,  H01L29/7722 ,  H01L29/8083

摘要： A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.

摘要翻译： 单芯片公共漏极JFET器件包括漏极，两个栅极和两个源极，使得与其形成两个公共漏极JFET。 由于在单个芯片内合并的两个JFET，其间不需要引线接合连接，因此没有由接合线引起的寄生电感和电阻，因此提高性能并降低封装成本。 单片式公共漏极JFET器件可以应用于降压转换器，升压转换器，反相转换器，开关和两级DC-DC转换器，以提高其性能和效率。 还提供了用于电流感测或比例电流产生的替代单芯片公共漏极JFET器件。

公开(公告)号：US20090237062A1

公开(公告)日：2009-09-24

申请号：US12385721

申请日：2009-04-17

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： G05F3/24

CPC分类号： H01L27/098 ,  H01L27/0744 ,  H01L29/7722 ,  H01L29/8083

摘要： A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.

公开(公告)号：US20090206922A1

公开(公告)日：2009-08-20

申请号：US12385718

申请日：2009-04-17

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： G05F3/02

CPC分类号： H01L27/098 ,  H01L27/0744 ,  H01L29/7722 ,  H01L29/8083

摘要： A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.

公开(公告)号：US20090201078A1

公开(公告)日：2009-08-13

申请号：US12385719

申请日：2009-04-17

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： G05F3/02

CPC分类号： H01L27/098 ,  H01L27/0744 ,  H01L29/7722 ,  H01L29/8083

摘要： A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.

公开(公告)号：US20070146046A1

公开(公告)日：2007-06-28

申请号：US11708326

申请日：2007-02-21

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： H03K17/687

CPC分类号： H02M3/158 ,  H02M3/155 ,  H03K17/063 ,  H03K17/6871 ,  H03K17/693 ,  H03K2017/6875

摘要： Electronic circuits use low-cost depletion-mode JFET to serve as power switch. Since depletion-mode JFET has smaller conductive resistance and is majority carrier device, the energy loss is less when current flows through the depletion-mode JFET, and faster switching speed is obtained, thereby enhancing the efficiency of the electronic circuits.

摘要翻译： 电子电路使用低成本耗尽型JFET作为电源开关。 由于耗尽型JFET具有较小的导电电阻并且是多数载流子器件，所以当电流流过耗尽型JFET时能量损失较小，并且获得更快的开关速度，从而提高电子电路的效率。

公开(公告)号：US07838901B2

公开(公告)日：2010-11-23

申请号：US12385719

申请日：2009-04-17

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L27/098 ,  H01L27/0744 ,  H01L29/7722 ,  H01L29/8083

摘要： A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.

公开(公告)号：US20090206921A1

公开(公告)日：2009-08-20

申请号：US12385717

申请日：2009-04-17

申请人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

发明人： Liang-Pin Tai ,  Jing-Meng Liu ,  Hung-Der Su

IPC分类号： G05F3/02

CPC分类号： H01L27/098 ,  H01L27/0744 ,  H01L29/7722 ,  H01L29/8083

摘要： A single-chip common-drain JFET device comprises a drain, two gates and two source arranged such that two common-drain JFETs are formed therewith. Due to the two JFETs merged within a single chip, no wire bonding connection is needed therebetween, thereby without parasitic inductance and resistance caused by bonding wire, and therefore improving the performance and reducing the package cost. The single-chip common-drain JFET device may be applied in buck converter, boost converter, inverting converter, switch, and two-step DC-to-DC converter to improve their performance and efficiency. Alternative single-chip common-drain JFET devices are also provided for current sense or proportional current generation.