公开(公告)号：US20140370638A1

公开(公告)日：2014-12-18

申请号：US14302385

申请日：2014-06-11

Applicant: mCube Inc.

Inventor： TE-HSI "TERRENCE" LEE ,  Sudheer S. Sridharamurthy ,  Shingo Yoneoka ,  Wenhua Zhang

IPC: B81C1/00

CPC classification number: B81B7/0022 ,  B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/11 ,  B81C1/00246 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00801 ,  B81C2201/053

Abstract: A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

Abstract translation: 一种用于制造集成MEMS-CMOS器件的方法。 该方法可以包括提供具有表面区域的衬底构件，并形成具有覆盖在表面区域上的至少一个CMOS器件的CMOS IC层。 可以形成覆盖CMOS IC层的底部隔离层，并且可以形成覆盖在底部隔离层的一部分上的屏蔽层和顶部隔离层。 底部隔离层可以包括顶部隔离层和屏蔽层之间的隔离区域。 覆盖顶部隔离层，屏蔽层和底部隔离层的MEMS层，并且可被蚀刻以形成具有至少一个可移动结构和至少一个锚定结构的至少一个MEMS结构。