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16 条记录 (耗时 0.013 秒)

    SUPERHYDROPHOBIC AND SUPEROLEOPHOBIC NANOSURFACES
    2.
    发明申请
    SUPERHYDROPHOBIC AND SUPEROLEOPHOBIC NANOSURFACES 有权
    超级离子和超疏水纳米微粒

    公开(公告)号：US20140011013A1

    公开(公告)日：2014-01-09

    申请号：US13996477

    申请日：2011-12-20

    申请人： Sungho Jin ,  Chulmin Choi

    发明人： Sungho Jin ,  Chulmin Choi

    IPC分类号： B32B7/02 ,  B05D5/00 ,  H01L31/0236

    CPC分类号： B32B7/02 ,  A01N25/34 ,  B05D5/00 ,  B05D5/08 ,  B05D5/083 ,  B81B2203/0361 ,  B81B2207/11 ,  B81C1/00111 ,  B81C1/00206 ,  B81C1/00404 ,  B81C1/00428 ,  B81C1/00531 ,  B82B3/0038 ,  B82Y40/00 ,  G03F7/0002 ,  H01L21/3065 ,  H01L21/3086 ,  H01L31/0236 ,  H01L31/02366 ,  Y02E10/50 ,  Y10T428/249924 ,  Y10T428/24994

    摘要： Devices, systems and techniques are described for producing and implementing articles and materials having nano-scale and microscale structures that exhibit superhydrophobic, superoleophobic or omniphobic surface properties and other enhanced properties. In one aspect, a surface nanostructure can be formed by adding a silicon-containing buffer layer such as silicon, silicon oxide or silicon nitride layer, followed by metal film deposition and heating to convert the metal film into balled-up, discrete islands to form an etch mask. The buffer layer can be etched using the etch mask to create an array of pillar structures underneath the etch mask, in which the pillar structures have a shape that includes cylinders, negatively tapered rods, or cones and are vertically aligned. In another aspect, a method of fabricating microscale or nanoscale polymer or metal structures on a substrate is made by photolithography and/or nano imprinting lithography.

    摘要翻译： 描述了用于生产和实施具有纳米尺度和微观结构的物品和材料的装置，系统和技术，其具有超疏水，超疏油或无所不在的表面性质和其它增强性能。 在一个方面，可以通过加入硅，氧化硅或氮化硅层等含硅缓冲层，然后进行金属膜沉积和加热来形成表面纳米结构，将金属膜转变成球状的离散的岛以形成 蚀刻掩模 可以使用蚀刻掩模蚀刻缓冲层，以在蚀刻掩模下方形成柱状结构的阵列，其中柱状结构具有包括圆柱体，负圆锥形棒或锥体并且垂直对准的形状。 在另一方面，通过光刻和/或纳米压印光刻法制造在衬底上制造微米级或纳米级聚合物或金属结构的方法。

    MEMS STRUCTURE WITH IMPROVED SHIELDING AND METHOD
    5.
    发明申请
    MEMS STRUCTURE WITH IMPROVED SHIELDING AND METHOD 审中-公开
    具有改进的屏蔽和方法的MEMS结构

    公开(公告)号：US20140370638A1

    公开(公告)日：2014-12-18

    申请号：US14302385

    申请日：2014-06-11

    申请人： mCube Inc.

    发明人： TE-HSI "TERRENCE" LEE ,  Sudheer S. Sridharamurthy ,  Shingo Yoneoka ,  Wenhua Zhang

    IPC分类号： B81C1/00

    CPC分类号： B81B7/0022 ,  B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/11 ,  B81C1/00246 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00801 ,  B81C2201/053

    摘要： A method for fabricating an integrated MEMS-CMOS device. The method can include providing a substrate member having a surface region and forming a CMOS IC layer having at least one CMOS device overlying the surface region. A bottom isolation layer can be formed overlying the CMOS IC layer and a shielding layer and a top isolation layer can be formed overlying a portion of bottom isolation layer. The bottom isolation layer can include an isolation region between the top isolation layer and the shielding layer. A MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer, and can be etched to form at least one MEMS structure having at least one movable structure and at least one anchored structure.

    摘要翻译： 一种用于制造集成MEMS-CMOS器件的方法。 该方法可以包括提供具有表面区域的衬底构件，并形成具有覆盖在表面区域上的至少一个CMOS器件的CMOS IC层。 可以形成覆盖CMOS IC层的底部隔离层，并且可以形成覆盖在底部隔离层的一部分上的屏蔽层和顶部隔离层。 底部隔离层可以包括顶部隔离层和屏蔽层之间的隔离区域。 覆盖顶部隔离层，屏蔽层和底部隔离层的MEMS层，并且可被蚀刻以形成具有至少一个可移动结构和至少一个锚定结构的至少一个MEMS结构。

    LIQUID-RESISTANT ACOUSTIC DEVICE GASKET AND MEMBRANE ASSEMBLIES
    7.
    发明申请
    LIQUID-RESISTANT ACOUSTIC DEVICE GASKET AND MEMBRANE ASSEMBLIES 有权
    耐液体气动装置垫片和膜组件

    公开(公告)号：US20160378142A1

    公开(公告)日：2016-12-29

    申请号：US14747642

    申请日：2015-06-23

    申请人： Apple Inc.

    发明人： Steven P. Cardinali ,  Anna-Katrina Shedletsky

    IPC分类号： G06F1/16

    CPC分类号： G06F1/1656 ,  B81B7/0009 ,  B81B2207/11 ,  G06F15/0208 ,  H04R1/00 ,  H04R1/086 ,  H04R1/44 ,  H04R7/00

    摘要： A liquid-resistant acoustic assembly for an electronic device includes an acoustic device positioned in a housing, a gasket compressed between the acoustic device and the housing, and a liquid-resistant membrane. The liquid-resistant membrane is disposed such that it is isolated from a non-uniform compressive distribution resulting from compression of the gasket. The liquid-resistant membrane may be uncompressed by compression of the gasket or compressed by a different compressive force than the gasket. For example, the liquid-resistant membrane may not be positioned between the gasket and the acoustic device, may be separated from the gasket, may be mounted to a shelf of the gasket or within a gap defined by the gasket, mounted to a stiffener positioned within the gasket, and mounted using other similar configurations.

    摘要翻译： 一种用于电子设备的耐液体声学组件包括定位在壳体中的声学装置，在声学装置和壳体之间被压缩的衬垫和耐液体膜。 防液膜被设置成使得其与由垫圈的压缩导致的不均匀的压缩分布隔离。 耐液体膜可以通过垫圈的压缩而被压缩或者被与垫圈不同的压缩力压缩。 例如，防液膜可能不位于垫圈和声学装置之间，可以与垫圈分离，可以安装到垫圈的搁架上或由垫圈限定的间隙中，安装到位于 在垫片内，并使用其他类似的配置安装。

    MEMS STRUCTURE WITH IMPROVED SHIELDING AND METHOD
    8.
    发明申请
    MEMS STRUCTURE WITH IMPROVED SHIELDING AND METHOD 有权
    具有改进的屏蔽和方法的MEMS结构

    公开(公告)号：US20160052777A1

    公开(公告)日：2016-02-25

    申请号：US14930642

    申请日：2015-11-02

    申请人： mCube Inc.

    发明人： TE-HSI "TERRENCE" LEE ,  SUDHEER S. SRIDHARAMURTHY ,  SHINGO YONEOKA ,  WENHUA ZHANG

    IPC分类号： B81B7/00

    CPC分类号： B81B7/0022 ,  B81B3/0086 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/11 ,  B81C1/00246 ,  B81C1/0038 ,  B81C1/00531 ,  B81C1/00801 ,  B81C2201/053

    摘要： An integrated circuit includes a substrate member having a surface region and a CMOS IC layer overlying the surface region. The CMOS IC layer has at least one CMOS device. The integrated circuit also includes a bottom isolation layer overlying the CMOS IC layer, a shielding layer overlying a portion of the bottom isolation layer, and a top isolation layer overlying a portion of the bottom isolation layer. The bottom isolation layer includes an isolation region between the top isolation layer and the shielding layer. The integrated circuit also has a MEMS layer overlying the top isolation layer, the shielding layer, and the bottom isolation layer. The MEMS layer includes at least one MEMS structure having at least one movable structure and at least one anchored structure. The at least one anchored structure is coupled to a portion of the top isolation layer, and the at least one movable structure overlies the shielding layer.

    摘要翻译： 集成电路包括具有表面区域的衬底构件和覆盖在表面区域上的CMOS IC层。 CMOS IC层具有至少一个CMOS器件。 集成电路还包括覆盖CMOS IC层的底部隔离层，覆盖在底部隔离层的一部分上的屏蔽层和覆盖在底部隔离层的一部分上的顶部隔离层。 底部隔离层包括顶部隔离层和屏蔽层之间的隔离区域。 集成电路还具有覆盖顶部隔离层，屏蔽层和底部隔离层的MEMS层。 MEMS层包括具有至少一个可移动结构和至少一个锚定结构的至少一个MEMS结构。 所述至少一个锚定结构耦合到所述顶部隔离层的一部分，并且所述至少一个可移动结构覆盖所述屏蔽层。