公开(公告)号：US09286158B2

公开(公告)日：2016-03-15

申请号：US14173873

申请日：2014-02-06

Applicant: Macronix International Co., Ltd.

Inventor： Chien-Hsin Liu ,  Su-Chueh Lo ,  Kuen-Long Chang ,  Ken-Hui Chen ,  Chun-Hsiung Hung

IPC: G06F11/00 ,  H03M13/00 ,  G06F11/10 ,  H03M13/19 ,  H03M13/15

CPC classification number: G06F11/1072 ,  G06F11/1012 ,  H03M13/1575 ,  H03M13/19

Abstract: A programming method, a reading method and an operating system for a memory are provided. The programming method includes the following steps. A data is provided. A parity generation is performed to obtain an error-correcting code (ECC). The memory is programmed to record the data and the error-correcting code. The data is transformed before performing the parity generation, such that a hamming distance between two codes corresponding to two adjacent threshold voltage states in the data to be performed the parity generation is 1.

Abstract translation: 提供了一种用于存储器的编程方法，读取方法和操作系统。 编程方法包括以下步骤。 提供数据。 执行奇偶校验生成以获得纠错码（ECC）。 存储器被编程为记录数据和纠错码。 在执行奇偶校验生成之前变换数据，使得对应于待执行奇偶产生的数据中的两个相邻阈值电压状态的两个代码之间的汉明距离为1。