公开(公告)号：US09012282B2

公开(公告)日：2015-04-21

申请号：US13942490

申请日：2013-07-15

Applicant: Macronix International Co., Ltd.

Inventor： Fang-Hao Hsu ,  Zusing Yang ,  Hong-Ji Lee

IPC: H01L23/48 ,  H01L29/40 ,  H01L21/8238 ,  H01L29/78 ,  H01L21/28 ,  H01L29/423 ,  H01L27/115

CPC classification number: H01L27/11568 ,  H01L21/28273 ,  H01L21/823835 ,  H01L27/11521 ,  H01L29/0684 ,  H01L29/401 ,  H01L29/42324 ,  H01L29/4916 ,  H01L29/513 ,  H01L29/518 ,  H01L29/78

Abstract: A self-align method of preparing semiconductor gates for formation of a silicide, such as a cobalt silicide (CoSi) layer, is disclosed. Deposition of silicon nitride (SiN) and low-temperature oxide (LTO) liner types, the SiN liner having an overhang structure, prevent damage to the gates while forming a self-aligned source. The undamaged gates are suitable for CoSi deposition.

Abstract translation: 公开了一种制备用于形成硅化物的半导体栅极的自对准方法，例如硅化钴（CoSi）层。 氮化硅（SiN）和低温氧化物（LTO）衬垫类型的沉积，具有突出结构的SiN衬垫防止在形成自对准源时损坏栅极。 未损坏的栅极适用于CoSi沉积。