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263 条记录 (耗时 0.023 秒)

    Method and apparatus for measuring temperature of substrate
    11.
    发明申请
    Method and apparatus for measuring temperature of substrate 审中-公开
    测量基板温度的方法和装置

    公开(公告)号：US20050259716A1

    公开(公告)日：2005-11-24

    申请号：US10964647

    申请日：2004-10-15

    申请人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii

    发明人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii

    IPC分类号： G01J5/00 ,  G01K11/12 ,  H01L21/324 ,  G01K11/00 ,  G01K1/16

    CPC分类号： G01J5/0003 ,  G01K11/12

    摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

    摘要翻译： 基板的表面和/或内部的温度通过用光照射待测温度的基板的前表面或后表面并测量来自基板的反射光的干涉和参考光来测量 。 提供了一种用于测量温度或厚度的方法和装置，其适用于直接测量基板的最外表面层的温度，以及使用这种方法的用于处理电子设备的基板的设备。

    Plasma deposition apparatus and method with controller
    12.
    发明授权
    Plasma deposition apparatus and method with controller 失效
    等离子体沉积设备及方法与控制器

    公开(公告)号：US06501082B1

    公开(公告)日：2002-12-31

    申请号：US09527562

    申请日：2000-03-16

    申请人： Toshio Goto ,  Masaru Hori ,  Masafumi Ito ,  Nobuo Ishii ,  Satoru Kawakami

    发明人： Toshio Goto ,  Masaru Hori ,  Masafumi Ito ,  Nobuo Ishii ,  Satoru Kawakami

    IPC分类号： G21K510

    CPC分类号： H01J37/32192 ,  H01J37/3233 ,  H01J37/32623

    摘要： A controlled plasma deposition system and method are provided including a vacuum vessel. An electron adding mass spectrometer is connected to a vacuum vessel for carrying out a gas treatment for a semi-conductor wafer. In the mass spectrometer, a gas in the vacuum vessel is incorporated, and electrons are added to the particles in the gas. Then the value of negative ions obtained by ionizing the particles, for example specific radicals, is measured. Once measured, the information is forwarded to a controller that may optimize the plasma deposition method.

    摘要翻译： 提供了包括真空容器的受控等离子体沉积系统和方法。 将电子加入质谱仪连接到用于对半导体晶片进行气体处理的真空容器。 在质谱仪中，并入真空容器中的气体，并将电子加到气体中的颗粒中。 然后测量通过电离粒子，例如特定基团获得的负离子的值。 一旦测量，信息被转发到可优化等离子体沉积方法的控制器。