公开(公告)号：US20090051924A1

公开(公告)日：2009-02-26

申请号：US12185888

申请日：2008-08-05

申请人： Masafumi ITO ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Masafumi ITO ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01B11/06

CPC分类号： G01J5/0003 ,  G01K11/12

摘要： An apparatus for measuring thickness is provided. A light source irradiates a front surface or a rear surface of a substrate with a light. A splitter splits the light into a reference light and a measurement light. The reference light is reflected by a reference light reflecting device. An optical path changing device changes an optical path length of light reflected from the reference light reflecting device. A light receiving device measures an interference of the reflected light from the substrate and the reference light from the reference light reflecting device. A thickness of at least one of the front surface, rear surface or inside of the substrate is measured based on a measurement of the interference.

摘要翻译： 提供了一种测量厚度的装置。 光源用光照射基板的前表面或后表面。 分流器将光分成参考光和测量光。 参考光被参考光反射装置反射。 光路改变装置改变从参考光反射装置反射的光的光路长度。 光接收装置测量来自基板的反射光和来自参考光反射装置的基准光的干涉。 基于干涉的测量来测量衬底的前表面，后表面或内部中的至少一个的厚度。

公开(公告)号：US20050271116A1

公开(公告)日：2005-12-08

申请号：US11196402

申请日：2005-08-04

申请人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01J5/00 ,  G01K11/12 ,  H01L21/324 ,  G01K1/16

CPC分类号： G01J5/0003 ,  G01K11/12

摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

公开(公告)号：US07416330B2

公开(公告)日：2008-08-26

申请号：US11196402

申请日：2005-08-04

申请人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

发明人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii ,  Tomohiro Suzuki ,  Chishio Koshimizu

IPC分类号： G01J5/08 ,  G01N25/00

CPC分类号： G01J5/0003 ,  G01K11/12

摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

摘要翻译： 基板的表面和/或内部的温度通过用光照射待测温度的基板的前表面或后表面并测量来自基板的反射光的干涉和参考光来测量 。 提供了一种用于测量温度或厚度的方法和装置，其适用于直接测量基板的最外表面层的温度，以及使用这种方法的用于处理电子设备的基板的设备。

公开(公告)号：US20050259716A1

公开(公告)日：2005-11-24

申请号：US10964647

申请日：2004-10-15

申请人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii

发明人： Masafumi Ito ,  Yasuyuki Okamura ,  Tatsuo Shiina ,  Nobuo Ishii

IPC分类号： G01J5/00 ,  G01K11/12 ,  H01L21/324 ,  G01K11/00 ,  G01K1/16

CPC分类号： G01J5/0003 ,  G01K11/12

摘要： The temperature of the surface and/or inside of a substrate is measured by irradiating the front surface or rear surface of the substrate, whose temperature is to be measured, with light and measuring the interference of a reflected light from the substrate and a reference light. A method and apparatus for measuring temperature or thickness which is suitable for directly measuring the temperature of the outermost surface layer of a substrate, and an apparatus for treating a substrate for an electronic device, which uses such method, are provided.

摘要翻译： 基板的表面和/或内部的温度通过用光照射待测温度的基板的前表面或后表面并测量来自基板的反射光的干涉和参考光来测量 。 提供了一种用于测量温度或厚度的方法和装置，其适用于直接测量基板的最外表面层的温度，以及使用这种方法的用于处理电子设备的基板的设备。

公开(公告)号：US06501082B1

公开(公告)日：2002-12-31

申请号：US09527562

申请日：2000-03-16

申请人： Toshio Goto ,  Masaru Hori ,  Masafumi Ito ,  Nobuo Ishii ,  Satoru Kawakami

发明人： Toshio Goto ,  Masaru Hori ,  Masafumi Ito ,  Nobuo Ishii ,  Satoru Kawakami

IPC分类号： G21K510

CPC分类号： H01J37/32192 ,  H01J37/3233 ,  H01J37/32623

摘要： A controlled plasma deposition system and method are provided including a vacuum vessel. An electron adding mass spectrometer is connected to a vacuum vessel for carrying out a gas treatment for a semi-conductor wafer. In the mass spectrometer, a gas in the vacuum vessel is incorporated, and electrons are added to the particles in the gas. Then the value of negative ions obtained by ionizing the particles, for example specific radicals, is measured. Once measured, the information is forwarded to a controller that may optimize the plasma deposition method.

摘要翻译： 提供了包括真空容器的受控等离子体沉积系统和方法。 将电子加入质谱仪连接到用于对半导体晶片进行气体处理的真空容器。 在质谱仪中，并入真空容器中的气体，并将电子加到气体中的颗粒中。 然后测量通过电离粒子，例如特定基团获得的负离子的值。 一旦测量，信息被转发到可优化等离子体沉积方法的控制器。

公开(公告)号：US07465424B2

公开(公告)日：2008-12-16

申请号：US10470414

申请日：2002-03-15

申请人： Koichi Hasegawa ,  Nobuo Ishii ,  Tomoyoshi Asaki

发明人： Koichi Hasegawa ,  Nobuo Ishii ,  Tomoyoshi Asaki

IPC分类号： C22C5/06

CPC分类号： C23C14/3414 ,  C22C5/06 ,  C22C5/08 ,  C23C14/14 ,  G11B7/258 ,  G11B7/259 ,  G11B7/2595 ,  G11B7/26 ,  Y10T428/21

摘要： Provided is a sputtering target material which has a high reflectance and which is excellent in a sulfurization resistance, comprising an Ag alloy prepared by alloying Ag with a specific small amount of the metal component (A) selected from In, Sn and Zn, a specific small amount of the metal component (B) selected from Au, Pd and Pt and, if necessary, a small amount of Cu.

摘要翻译： 提供了具有高反射率并且耐硫化性优异的溅射靶材料，其包括通过使Ag与特定量的选自In，Sn和Zn的特定量的金属组分（A）合金制备的Ag合金，具体的 少量选自Au，Pd和Pt的金属组分（B），如果需要，少量的Cu。

公开(公告)号：US20070219745A1

公开(公告)日：2007-09-20

申请号：US11587142

申请日：2005-04-22

申请人： Mitsuo Takeda ,  Wei Wang ,  Nobuo Ishii ,  Yoko Miyamoto

发明人： Mitsuo Takeda ,  Wei Wang ,  Nobuo Ishii ,  Yoko Miyamoto

IPC分类号： G01B11/25

CPC分类号： G01B11/002 ,  G01B11/024 ,  G01B11/24 ,  G06T7/001 ,  G06T7/262 ,  G06T7/529 ,  G06T7/579 ,  G06T2207/30136 ,  G06T2207/30164

摘要： Without using an interferometer, small displacement and/or three-dimensional shape of an object is detected in a noncontact way with high accuracy using pseudo-phase information calculated from e.g., a speckle pattern having a spatially random structure. A speckle image of the test object of the before displacement is obtained, and a spatial frequency spectrum is calculated by executing an N-dimensional Fourier transform for this. The complex analytic signal is obtained by setting the amplitude of frequency spectrum in the half plane including zero frequency in this amplitude distribution to zero, and executing the frequency spectrum amplitude in the half plane of the remainder in the inverse Fourier transform. And then, the amplitude value of this complex analytic signal is replaced with the constant value, a part of the obtained analytic signal domain is clipped, the phase information is calculated by the phase-only correlation function, and the cross-correlation peak in N-dimension is obtained. The displacement magnitude can be obtained by executing the above-mentioned method to the after displacement of the test object, and obtaining the difference of the cross-correlation peak before and after the displacement.

摘要翻译： 在不使用干涉仪的情况下，使用从例如具有空间随机结构的散斑图案计算的伪相位信息，以非接触方式以非接触方式检测物体的小位移和/或三维形状。 获得前一位移测试对象的斑点图像，并通过执行N维傅立叶变换来计算空间频谱。 通过将该幅度分布中包括零频率的半平面中的频谱的幅度设置为零，并且在逆傅立叶变换中执行余数的半平面中的频谱幅度，获得复数分析信号。 然后，将该复数分析信号的振幅值代入常数值，得到的分析信号域的一部分被剪切，相位信息由相位相关函数计算，N相互相关峰值 - 获得维度。 可以通过对被检体的移位后的上述方法进行位移大小，得到位移前后的互相关峰的差。

公开(公告)号：US06910440B2

公开(公告)日：2005-06-28

申请号：US09979719

申请日：2001-01-18

申请人： Nobuo Ishii ,  Yasuyoshi Yasaka ,  Kibatsu Shinohara

发明人： Nobuo Ishii ,  Yasuyoshi Yasaka ,  Kibatsu Shinohara

IPC分类号： H01J37/32 ,  C23C16/00 ,  H05H1/00

摘要： A plasma processing apparatus that generates a uniform plasma, thus allowing uniform processing of large-diameter wafers. The cylindrical apparatus includes a wafer mounting table, a silica plate providing an airtight seal, a microwave supplier for propagating a microwave in TE11 mode, and a cylindrical waveguide connected at one end to the microwave supplier. A radial waveguide box is connected between the other end of the cylindrical waveguide and the silica plate. The radial waveguide box extends radially outward from the cylindrical waveguide, forming a flange and defining an interior waveguide space. A disc-shaped slot antenna is located at the lower end of the radial waveguide box, above the silica plate. A circularly-polarized wave converter disposed in the cylindrical waveguide rotates the TE11-mode microwave about the axis of the cylindrical waveguide, and sends the rotating microwave to the radial waveguide box.

摘要翻译： 一种等离子体处理装置，其产生均匀的等离子体，从而允许大直径晶片的均匀加工。 圆筒形装置包括晶片安装台，提供气密密封的石英板，用于以TE11模式传播微波的微波供应器，以及一端连接到微波供应器的圆柱形波导。 径向波导盒连接在圆柱形波导的另一端和石英板之间。 径向波导盒从圆柱形波导径向向外延伸，形成凸缘并限定内部波导空间。 盘状槽天线位于径向波导盒的下端，位于石英板上方。 设置在圆筒形波导管内的圆偏振波转换器围绕圆柱形波导的轴线旋转TE11模式微波，并将旋转的微波发送到径向波导盒。

公开(公告)号：US20050087296A1

公开(公告)日：2005-04-28

申请号：US10509656

申请日：2003-03-26

申请人： Toshio Goto ,  Masaru Hori ,  Nobuo Ishii

发明人： Toshio Goto ,  Masaru Hori ,  Nobuo Ishii

IPC分类号： C23C16/48 ,  H01J37/32 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01L21/67253 ,  C23C16/482 ,  H01J37/32935

摘要： A processing apparatus includes a vessel (1) which accommodates a target object (W), ultraviolet light-generating means (41) for outputting ultraviolet light (UV) toward an atmosphere (P) containing radicals in the vessel (1), ultraviolet light-receiving means (42) for receiving the ultraviolet light (UV) passing through the atmosphere (P), and analysis control means (43, 44) for obtaining a density of the radicals in the atmosphere (P) on the basis of an output signal from the ultraviolet light-receiving means (42), to control a process parameter. The density of the radicals can be held at a constant level, and process reproducibility can be improved.

摘要翻译： 处理装置包括容纳目标物体（W）的容器（1），用于向容器（1）中含有自由基的气氛（P）输出紫外光（UV）的紫外线发光装置，紫外线 - 接收通过大气（P）的紫外线（UV）的接收装置（42），以及用于基于输出获得大气中的自由基密度的分析控制装置（43,44） 来自紫外光接收装置（42）的信号，以控制处理参数。 自由基的密度可以保持在恒定水平，并且可以提高工艺的再现性。

公开(公告)号：US20050000445A1

公开(公告)日：2005-01-06

申请号：US10836268

申请日：2004-05-03

申请人： Nobuo Ishii

发明人： Nobuo Ishii

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/505 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01J37/32192

摘要： A plasma processing device includes a susceptor, processing vessel, dielectric plate, antenna, and projection. The susceptor has a stage surface on which a target object is to be arranged. The processing vessel accommodates the susceptor and has an opening in a side which opposes the stage surface of the susceptor. The dielectric plate closes the opening of the processing vessel. The antenna supplies a high-frequency electromagnetic field into the processing vessel through the dielectric plate. The projection projects from a surface of the antenna which opposes the dielectric plate toward the dielectric plate. The projection is conductive at least at its surface. A plasma processing method is also disclosed.

摘要翻译： 等离子体处理装置包括基座，处理容器，电介质板，天线和投影。 感受器具有在其上布置目标物体的台面。 处理容器容纳基座，并且在与基座的台表面相对的一侧具有开口。 电介质板封闭处理容器的开口。 天线通过电介质板向处理容器提供高频电磁场。 突起从天线的与电介质板朝向电介质板的表面突出。 该突起至少在其表面是导电的。 还公开了等离子体处理方法。