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105 条记录 (耗时 0.033 秒)

    STORAGE ELEMENT AND MEMORY
    11.
    发明申请
    STORAGE ELEMENT AND MEMORY 有权
    存储元素和存储器

    公开(公告)号：US20080180992A1

    公开(公告)日：2008-07-31

    申请号：US12013895

    申请日：2008-01-14

    申请人： Kazutaka Yamane ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Kazutaka Yamane ,  Minoru Ikarashi ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  Y10S977/934 ,  Y10S977/935

    摘要： A storage element includes a storage layer for holding information depending on a magnetization state of a magnetic material; and a magnetization fixed layer in which magnetization direction is fixed, that is arranged relative to the storage layer through a nonmagnetic layer. The magnetization direction of the storage layer is changed with application of an electric current in a laminating direction to enable information to be recorded to the storage layer. A plurality of magnetization regions respectively having magnetization components in laminating directions and having magnetizations in different directions from each other are formed in the magnetization fixed layer or on an opposite side of the magnetization fixed layer relative to the storage layer.

    摘要翻译： 存储元件包括用于根据磁性材料的磁化状态保持信息的存储层; 以及磁化方向固定的磁化固定层，其相对于存储层通过非磁性层布置。 存储层的磁化方向通过在层叠方向上施加电流而改变，以使信息能够被记录到存储层。 在磁化固定层或相对于存储层的磁化固定层的相对侧上形成分别具有层压方向上的磁化成分并且彼此具有不同方向的磁化的多个磁化区域。

    STORAGE ELEMENT AND MEMORY
    12.
    发明申请
    STORAGE ELEMENT AND MEMORY 审中-公开
    存储元素和存储器

    公开(公告)号：US20080140922A1

    公开(公告)日：2008-06-12

    申请号：US11874045

    申请日：2007-10-17

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： G06F12/00

    CPC分类号： H01L43/10 ,  B82Y25/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/329 ,  H01F41/325 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    摘要： A storage element includes a storage layer, a fixed magnetization layer, a spin barrier layer, and a spin absorption layer. The storage layer stores information based on a magnetization state of a magnetic material. The fixed magnetization layer is provided for the storage layer through a tunnel insulating layer. The spin barrier layer suppresses diffusion of spin-polarized electrons and is provided on the side of the storage layer opposite the fixed magnetization layer. The spin absorption layer is formed of a nonmagnetic metal layer causing spin pumping and provided on the side of the spin barrier layer opposite the storage layer. A direction of magnetization in the storage layer is changed by passing current in a layering direction to inject spin-polarized electrons so that information is recorded in the storage layer and the spin barrier layer includes at least a material selected from oxides, nitrides, and fluorides.

    摘要翻译： 存储元件包括存储层，固定磁化层，自旋势垒层和自旋吸收层。 存储层基于磁性材料的磁化状态存储信息。 通过隧道绝缘层为存储层提供固定磁化层。 自旋势垒层抑制自旋极化电子的扩散，并且设置在与固定磁化层相对的存储层侧。 自旋吸收层由引起自旋泵送的非磁性金属层形成，并且设置在与存储层相对的自旋阻挡层的一侧。 存储层中的磁化方向通过在分层方向上传递电流而改变以注入自旋极化电子，使得信息被记录在存储层中，并且自旋阻挡层至少包括选自氧化物，氮化物和氟化物的材料 。

    Storage element and memory
    17.
    发明授权
    Storage element and memory 有权
    存储元件和存储器

    公开(公告)号：US08575711B2

    公开(公告)日：2013-11-05

    申请号：US11564595

    申请日：2006-11-29

    申请人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： H01L43/00

    CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    摘要： A storage element includes a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

    摘要翻译： 存储元件包括存储层，其被配置为通过使用磁性材料的磁化状态来保持信息，其中钉扎磁化层设置在存储层的一侧上，具有隧道绝缘层，并且随着磁化方向的磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。

    Storage element and memory
    18.
    发明授权
    Storage element and memory 有权
    存储元件和存储器

    公开(公告)号：US08339840B2

    公开(公告)日：2012-12-25

    申请号：US12668925

    申请日：2008-06-30

    申请人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Masanori Hosomi ,  Hiroyuki Ohmori ,  Minoru Ikarashi ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228

    摘要： A memory is provided that is capable of improving the thermal stability without increasing the write current. The memory is configured to include: a storage element which has a storage layer that holds information according to a magnetization state of a magnetic substance and in which a magnetization fixed layer is provided on the storage layer with an intermediate layer 16 interposed therebetween, the intermediate layer is formed of an insulator, the direction of magnetization of the storage layer is changed by injecting electrons spin-polarized in a lamination direction such that the information is recorded in the storage layer, and distortion is applied to the storage layer from an insulating layer which exists around the storage layer and has a smaller coefficient of thermal expansion than the storage layer. A wiring line for supplying a current flowing in the lamination direction of the storage element.

    摘要翻译： 提供了能够在不增加写入电流的情况下提高热稳定性的存储器。 存储器被配置为包括：存储元件，其具有根据磁性物质的磁化状态保存信息的存储层，并且其中在存储层上设置有中间层16的磁化固定层，中间层 层由绝缘体形成，通过在层叠方向注入电子自旋极化来改变存储层的磁化方向，使得信息被记录在存储层中，并且从绝缘层向存储层施加失真 其存在于存储层周围并且具有比存储层更小的热膨胀系数。 一种用于提供在存储元件的层叠方向上流动的电流的布线。

    Memory device and memory for retaining information based on amagnetization state of a magnetic material
    20.
    发明授权
    Memory device and memory for retaining information based on amagnetization state of a magnetic material 有权
    基于磁性材料的磁化状态来保存信息的存储器件和存储器

    公开(公告)号：US07869272B2

    公开(公告)日：2011-01-11

    申请号：US12506637

    申请日：2009-07-21

    申请人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

    发明人： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Tetsuya Yamamoto ,  Yutaka Higo ,  Yuki Oishi ,  Hiroshi Kano

    IPC分类号： G11C11/14

    CPC分类号： G11C11/161 ,  G11C11/1659

    摘要： A memory device is provided. The memory device includes a memory layer and a fixed-magnetization layer. The memory layer retains information based on a magnetization state of a magnetic material. The fixed-magnetization layer is formed on the memory layer through an intermediate layer made of an insulating material. The information is recorded on the memory layer with a change in a magnetization direction of the memory layer caused by injecting a spin-polarized electron in a stacked direction. A level of effective demagnetizing field, which is received by the memory layer, is smaller than a saturation-magnetization level of magnetization of the memory layer.

    摘要翻译： 提供存储器件。 存储器件包括存储层和固定磁化层。 存储层基于磁性材料的磁化状态保留信息。 通过由绝缘材料制成的中间层，在存储层上形成固定磁化层。 信息通过沿堆叠方向注入自旋极化电子而引起的存储层的磁化方向的变化记录在存储层上。 由存储层接收的有效去磁场的电平小于存储层的磁化饱和磁化水平。