公开(公告)号：US20160155893A1

公开(公告)日：2016-06-02

申请号：US15016943

申请日：2016-02-05

Applicant: Micron Technology, Inc.

Inventor： Martin F. Schubert ,  Cem Basceri ,  Vladimir Odnoblyudov ,  Casey Kurth ,  Thomas Gehrke

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/0062 ,  H01L33/0066 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/02 ,  H01L33/16 ,  H01L33/46

Abstract: Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.